Intel and IQE present three joint papers at the IEDM conference in Washington DC

08 December 2011

Cardiff, UK, 8 December 2011 - Intel Corporation (NASDAQ: INTC) and IQE plc (AIM: IQE) yesterday presented a series of joint papers on recent key developments in compound semiconductor device technologies at the International Electron Devices Meeting (IEDM) in Washington, DC.
The first paper; "Electrostatics Improvement in 3-D Tri-gate Over Ultra-Thin Body Planar InGaAs Quantum Well Field Effect Transistors with High-K Gate Dielectric and Scaled Gate-to-Drain/Gate-to-Source Separation" presented by M. Radosavljevic from the Intel Corporation, demonstrated for the first time 3-D Tri-gate InGaAs devices with significantly improved electrostatic parameters compared with equivalent ultra-thin planar devices. The research presented show that the 3-D Tri-gate architecture is an effective way to improve the scalability of III-V FETs for future low power logic applications.
The second paper; "Fabrication, Characterization, and Physics of III-V Heterojunction Tunneling Field Effect Transistors (H-TFET) for Steep Sub-Threshold Swing" presented by Gilbert Dewey from the Intel Corporation, demonstrated the steepest subthreshold swing (SS < 60 mV/decade) ever reported in a III-V Tunneling Field Effect Transistor (TFET) by using thin gate oxide, heterojunction engineering and high source doping. The overall TFET device performance is improved compared with homojunction TFETs due to the decreased source-to-channel tunnel barrier height.
The third paper; "MOVPE III-V Material Growth on Silicon Substrates and its Comparison to MBE for Future High Performance and Low Power Logic Applications" presented by Niloy Mukherjee from the Intel Corporation, demonstrated for the first time, that the material quality of MOVPE III-V QWFET structures on Si can be matched to that of the best MBE III-V QWFET structures on Si, using 75mm diameter Si substrates. The research presented suggests that MOVPE can be a promising technique for III-V material growth on silicon substrates for future logic device applications.
Established in 1955, the IEDM is the world's premier forum for reporting breakthroughs in technology, design, manufacturing, physics and the modelling of semiconductors and other electronic devices. Proceedings of the conference are published by the IEEE.
Technical/Sales: IQE Inc (+1 610 972 1488) Amy Liu
Press: IQE plc (+44 29 2083 9400) Chris Meadows


Note to Editors
IQE is the leading global supplier of advanced semiconductor wafers with products that cover a diverse range of applications, supported by an innovative outsourced foundry services portfolio that allows the Group to provide a 'one stop shop' for the wafer needs of the world's leading semiconductor manufacturers.
IQE uses advanced crystal growth technology (epitaxy) to manufacture and supply bespoke semiconductor wafers ('epi-wafers') to the major chip manufacturing companies, who then use these wafers to make the chips which form the key components of virtually all high technology systems. IQE is unique in being able to supply wafers using all of the leading crystal growth technology platforms.
IQE's products are found in many leading-edge consumer, communication, computing and industrial applications, including a complete range of wafer products for the wireless industry, such as mobile handsets and wireless infrastructure, Wi-Fi, WiMAX, base stations, GPS, and satellite communications; optical communications. The Group also manufactures advanced optoelectronic and photonic components such as semiconductor lasers, vertical cavity surface emitting lasers (VCSELs) and optical sensors for a wide range of applications including optical storage (CD, DVD, BluRay), thermal imaging, leading-edge medical products, pico-projection, finger navigation ultra high brightness LEDs, and high efficiency concentrator photovoltaic (CPV) solar cells.
The manufacturers of these chips are increasingly seeking to outsource wafer production to specialist foundries such as IQE in order to reduce overall wafer costs and accelerate time to market.
IQE also provides bespoke R&D services to deliver customised materials for specific applications and offers specialist technical staff to manufacture to specification either at its own facilities or on the customer's own sites. The Group is also able to leverage its global purchasing volumes to reduce the cost of raw materials. In this way, IQE's outsourced services, provide compelling benefits in terms of flexibility and predictability of cost, thereby significantly reducing operating risk.
IQE operates eight facilities located in Cardiff (two), Milton Keynes and Bath in the UK; in Bethlehem, Pennsylvania, Somerset, New Jersey and Spokane, Washington in the USA; and Singapore. The Group also has 11 sales offices located in major economic centres worldwide.