IQE champions innovation through knowledge-sharing. Please explore our library of publications authored or contributed to by IQE's top talent, to find industry-leading insights.

K. Nomoto, W. Li, B. Song, Z. Hu, M. Zhu, M. Qi, V. Protasenko, Z. Zhang, M. Pan, X. Gao, H. Marchand, W. Johnson, D. Jena, and H.G. Xing, "Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV" Appl. Phys. Lett. 120, 122111 (2022); https://doi.org/10.1063/5.0083302

F. Kaess, O. Laboutin, C.-K. Kao, H. Marchand, “Homoepitaxial GaN for vertical power and RF hybrid devices grown on production-scale MOCVD reactors” CS MANTECH Conference May 2020 Digest p. 13.
O. Laboutin, F. Kaess, C.-K. Kao, H. Marchand, “SiN Films Grown in Production Scale MOCVD Reactor for Passivation of III-nitride Structures” CS MANTECH Conference May 2020 Digest p. 21
Rytis Dargis, Andrew Clark, Azadeh Ansari, Zhijian Hao, Mingyo Park, DeaGyu Kim, Robert Yanka, Richard Hammond, Mukul Debnath, and Rodney Pelzel “Single-Crystal Multilayer Nitride, Metal, and Oxide Structures on Engineered Silicon for New-Generation Radio Frequency Filter Applications” Phys. Status Solidi A 2020, 1900813 p 1-8.
Mingyo Park, Zhijian Hao, Rytis Dargis, Andrew Clark, and Azadeh Ansari, “Epitaxial Aluminum Scandium Nitride Super High Frequency Acoustic Resonators” J of Microelectromechanical Sys, 29, 490 (2020).
S.A. Nelson, J.M. Fastenau, D. Lubyshev, M. Kattner, P. Frey, A.W.K. Liu, B. Martinez, and M.J. Furlong, “Large Format Multi-Wafer Production of LWIR Photodetector Structures on 150mm GaSb Substrates by MBE,” SPIE Defense + Commercial Sensing Conference, Anaheim, CA, Apr 26-30, 2020, 11407-38.
Ben Stevens, Adam Jandl, Aidan Daly, Andrew Clark, Hugues Marchand, Andrew Joel and Rodney Pelzel, “Volume Manufacture of 150mm VCSEL Epi-wafers,” CS MANTECH Conference May 2019 (Invited).
J.M. Fastenau, D. Lubyshev, S.A. Nelson, M. Kattner, P. Frey, M. Fetters, J. Zeng, A.W.K. Liu, A.O. Morgan, S.A. Edwards, R. Dennis, K. Beech, D. Burrows, K. Patnaude, R. Faska, J. Bundas, A. Reisinger, and M. Sundaram, “Direct MBE Growth of Metamorphic nbn Infrared Photodetectors on 150 mm Ge-Si Substrates for Heterogeneous Integration,” J. Vac. Sci. Technol. B, 37, 031216 (2019); https://doi.org/10.1116/1.5088784.
D. Lubyshev, J.M. Fastenau, M. Kattner, P. Frey, S.A. Nelson, R. Flick, M. Rogers, A.W.K. Liu, P. Flint, and N. Faleev, “Effect of Substrate Orientation on Sb-based MWIR Photodetector Characteristics,” Infrared Phys. Technol. 95, 27 (2018); https://doi.org/10.1016/j.infrared.2018.09.031.
A.W.K. Liu, D. Lubyshev, J.M. Fastenau, S. Nelson, M. Kattner, and P. Frey, “Molecular Beam Epitaxial Growth and Characterization of Large-format GaSb-based IR Photodetector Structures,” OSA Opt. Mater. Express, 8, 1282 (2018); https://doi.org/10.1364/OME.8.001282 (invited).
N. Baril, A. Brown, P. Maloney, M. Tidrow, D. Lubyshev, Y. Qiu, J.M. Fastenau, A.W.K. Liu, and S. Bandara, “Bulk InAsxSb1-x nBn Photodetectors with Greater Than 5 µm Cutoff on GaSb,” Appl. Phys. Letts. 109, 122104 (2016); https://doi.org/10.1063/1.4963069.