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The ever-increasing demand for higher speed and improved performance from today’s electronic devices is ushering in a new era of semiconductor materials that combine the scale of the silicon industry, which has been the default semiconductor material for the last half century, with the power and performance of compound semiconductors that have emerged as true 21st century materials.

IQE is at the forefront of developing highly advanced technology for producing compound semiconductor on silicon wafers and has also developed a new range of engineered substrates such as germanium-on-insulator (GeOI), germanium-on-silicon (GeOsi), and silicon-on-sapphire (SOS) for next-generation microprocessors, ultra high speed/density flash memory and MEMs devices.

IQE has established a powerful position in these advanced technologies, working with some of the biggest names in the industry and on major government funded programmes, which is reflected in a number of joint patents awarded in conjunction with Intel for the production of compound semiconductor materials on silicon substrates. Indications from customers are that initial product launches are anticipated as early as 2016.

We believe that the intellectual property that we are developing in this field has the potential to revolutionise the semi-conductor world, and in doing so create significant long term value to IQE stakeholders.