Publications

Publications

  • N. Baril, A. Brown, D. Zuo, M. Tidrow, D. Lubyshev, J.M. Fastenau, A.W.K. Liu, and S. Bandara

    “MWIR Barrier Infrared Detectors with Greater than 5μm Cutoff Using Bulk InAsSb Grown on GaSb Substrates”

    SPIE Defense + Commercial Sensing Conference, Anaheim, CA, Apr 9-13, 2017, 10177-56; Proc. SPIE 10177, Infrared Technology and Applications XLIII, Eds. B.F. Andresen, G.F. Fulop, C.M. Hanson, J.L. Miller, and P.R. Norton, 101771L (May 16, 2017), doi:10.1117/12.2262503. (2017)
  • D. Lubyshev, J.M. Fastenau, M. Kattner, P. Frey, A.W.K. Liu, and M.J. Furlong

    “Large-format Multi wafer Production of 5” GaSb-based Photodetectors by Molecular Beam Epitaxy”

    SPIE Defense + Commercial Sensing Conference, Anaheim, CA, Apr 9-13, 2017, 10177-43; Proc. SPIE 10177, Infrared Technology and Applications XLIII, Eds. B.F. Andresen, G.F. Fulop, C.M. Hanson, J.L. Miller, and P.R. Norton, 1017718 (May 16, 2017), doi:10.1117/12.2263962. (2017)
  • A.W.K. Liu, D. Lubyshev, Y. Qiu, J.M. Fastenau, M. Kattner, P. Frey, and Y. Wu

    “MBE Growth of Advanced Sb based IR Photodetector Structures for the VISTA Program”

    SPIE Defense + Commercial Sensing Conference, Anaheim, CA, Apr 9-13, 2017, 10177-27 (invited). (2017)
  • D. Lubyshev

    “Monolithic Integration of III-V As- and P-based Devices on Si through Direct MBE Growth and using Lattice-Engineered Substrate Templates”

    19th European Workshop on Molecular Beam Epitaxy, St. Petersburg, Russia, Mar 19 22, 2017 (invited). (2017)
  • B. Martinez, J.P. Flint, T.E.M. Betz; G. Dallas, B. Smith, M. Tybjerg, S. Aravazhi, and M.J. Furlong

    “Standardizing Large Format 5" GaSb and InSb Substrate Production”

    SPIE Defense + Commercial Sensing Conference, Anaheim, CA, Apr 9-13, 2017, 9819-13; Proc. SPIE 10177, Infrared Technology and Applications XLIII, Eds. B.F. Andresen, G.F. Fulop, C.M. Hanson, J.L. Miller, and P.R. Norton, 101772L (Feb. 22, 2017), doi:10.1117/12.2263961. (2017)
  • J.P. Flint, B. Martinez, T.E.M. Betz, J. Mackenzie, F. Kumar, and L. Burgess

    “Bulk Growth and Surface Characterization of Epitaxy Ready Cadmium Zinc Telluride Substrates for Use in IR Imaging Applications”

    SPIE Defense + Commercial Sensing Conference, Anaheim, CA, Apr 9-13, 2017; 9819-13, Proc. SPIE 10177, Infrared Technology and Applications XLIII, Eds. B.F. Andresen, G.F. Fulop, C.M. Hanson, J.L. Miller, and P.R. Norton, 1017717 (Feb. 22, 2017), doi:10.1117/12.2263960. (2017)
  • Chien-Fong Loa, O. Laboutina, C.-K. Kaoa, Hugues Marchanda, Rytis Dargisa,b, Andrew Clarkb, Rodney Pelzela and W. Johnsona

    "GaN/Si Buffer Development for RF and Power Applications"

    © 2016 ECS - The Electrochemical Society Abstract MA2016-02 2046 (2016)
  • Thomas L. Boughera, Luke Yatesa, Chien-Fong Lob, Wayne Johnsonb, Samuel Grahamc, and Baratunde A. Colac

    "Thermal Boundary Resistance in GaN Films Measured by Time Domain Thermoreflectance with Robust Monte Carlo Uncertainty Estimation"

    ISSN: 1556-7265 (Print) 1556-7273 (Online) (2016)
  • N. Baril, A. Brown, P. Maloney, M. Tidrow, D. Lubyshev, Y. Qiu, J.M. Fastenau, A.W.K. Liu, and S. Bandara

    “Bulk InAsxSb1-x nBn Photodetectors with Greater Than 5 µm Cutoff on GaSb,”

    Appl. Phys. Letts. 109, 122104 (2016), doi: 10.1063/1.4963069. (2016)
  • L. Lei, L. Li, H. Lotfi, Y. Jiang, R.Q. Yang, M.B. Johnson, D. Lubyshev, Y. Qiu, J.M. Fastenau, and A.W.K. Liu

    “Mid-wave Interband Cascade Infrared Photodetectors based on GaInAsSb Absorbers,”

    Semicond. Sci. Technol. 31, 105014 (2016), doi:10.1088/0268-1242/31/10/105014. (2016)
  • D. Lubyshev, J.M. Fastenau, A. Morgan, H. Nguyen, S. Edwards, M. Fisher, R. Dargis, A. Clark, R. Pelzel, H. Marchand, O. Laboutin, C.-F. Lo, C. K. Kao, and A.W.K. Liu

    “Hetero-integration of III-V Compound Semiconductor with Si through Direct MBE Growth and using Different Lattice-Engineered Substrate Templates,”

    IEEE Photonics Conference, 29th Annual Conf. of the IEEE Photonics Society (IPC), Waikoloa, HI, Oct 2-6, 2016, ThA1.5 (invited). (2016)
  • A.W.K. Liu, D. Lubyshev, Y. Qiu, M. Kattner, P. Frey, and J.M. Fastenau

    “Evaluation of 4-inch GaSb Substrates for Production MBE Growth of Infrared Photodetectors”

    Quantum Structured Infrared Photodetector International Conference (QSIP), Tel Aviv, Israel, Jun 12-17, 2016, Th-1a. (2016)
  • B. Martinez, M. Tyberg, P. Flint, J. Fastenau, D. Loubychev, A.W.K. Liu, and M.J. Furlong

    “A Study of the Preparation of Epitaxy-Ready Polished Surfaces Of (100) Gallium Antimonide Substrates Demonstrating Ultra Low Surface Defects For MBE Growth”

    SPIE Defense + Commercial Sensing Conference, Baltimore, MD, Apr 17-21, 2016, 9819-16; Proc. SPIE 9819, Infrared Technology and Applications XLII, Eds. B.F. Andresen, G.F. Fulop, C.M. Hanson, J.L. Miller, and P.R. Norton, 981916 (May 20, 2016), doi:10.1117/12.2225993. (2016)
  • L. Pessoa, B. Peng, J. Wang, L. Sanchez, A. Al-Khalidi, E. Wasige, A. Liu, H. Cantu, I. Oxtoby, B. Napier, A. Kelly, J. Figueiredo, M. Achouche, H. Salgado, T. Kürner, M. Fisher, A. Pascht, and W. Templ

    “iBROW – Innovative Ultra-BROadband Ubiquitous Wireless Communications through Terahertz Transceivers”

    IEEE COMSOC MMTC Communications – Frontiers 11, 11 (2016) (2016)
  • J.P. Flint, B. Martinez, T.E.M. Betz, J. MacKenzie, F.J. Kumar, and G. Bindley

    “Bulk Growth and Surface Characterization of Epitaxy Ready Cadmium Zinc Telluride Substrates for Use in IR Imaging Applications”

    SPIE Defense + Commercial Sensing Conference, Baltimore, MD, Apr 17-21, 2016, 9819-13, Proc. SPIE 9819, Infrared Technology and Applications XLII, Eds. B.F. Andresen, G.F. Fulop, C.M. Hanson, J.L. Miller, and P.R. Norton, 981913 (May 20, 2016), doi:10.1117/12.2225796. (2016)
  • V. Djara, V. Deshpande, E. Uccelli, N. Daix, D. Caimi, C. Rossel, M. Sousa, H. Siegwart, C. Marchiori, J.M. Hartmann, K.-T. Shiu, C.-W. Weng, M. Krishnan, M. Lofaro, R. Steiner, D. Sadana, D. Lubyshev, A. Liu, L. Czornomaz, and J. Fompeyrine

    "An InGaAs on Si Platform for CMOS with 200 mm InGaAs-OI Substrate, Gate-first, Replacement Gate Planar and FinFETs Down to 120 nm Contact Pitch"

    2015 IEEE Symposium on VLSI Technology, Kyoto, Japan, Jun 16-19, 2015, 13-5 (2015)
  • D. Lubyshev, J. Fastenau, A. Liu, and Y. Wu

    "Monolithic Integration of III-V As- and P-Based Devices on Si through Direct MBE Growth and Using Lattice Engineered Substrates"

    ECS Trans. 66, 89 (2015); 227th Meeting of the Electrochemical Society, Symp. H03: Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5, Chicago, IL, May 24-28, 2015, H03 1370 (invited). 2. V. Djara, V. Deshpande, E. Uccelli, (2015)
  • M.J. Furlong, R. Martinez, M. Tyberg, B. Smith, and A. Mowbray

    "Growth and Characterization of ≥6” Epitaxy-ready GaSb Substrates for Use in Large Area Infrared Imaging Applications"

    SPIE Defense, Security & Sensing Conference, Baltimore, MD, Apr 20-24, 2015 (9451-30) (2015)
  • A.W.K. Liu, D. Lubyshev, Y. Qiu, J.M. Fastenau, M.J. Furlong, M. Tyberg, B. Martinez, A. Mowbray, and B. Smith

    "MBE Growth of Sb-based Bulk nBn Infrared Photodetector Structures on 6-inch GaSb Substrates"

    Proc. SPIE 9451, Infrared Technology and Applications XLI, Eds. B.F. Andresen, G.F. Fulop, C.M. Hanson, and P.R. Norton, 94510T (June 4, 2015), doi: 10.1117/12.2178122; SPIE Defense, Security & Sensing Conference, Baltimore, MD, Apr 20-24, 2015 (9451-31) (2015)
  • R. Martinez, A. Mowbray, B. Smith, M. Tyberg, and M.J. Furlong

    "A Study of Doping Influences on Transmission of Large-Diameter Gallium Antimonide Substrates for Long-Wave (LWIR) to Very Long Wavelength (VLWIR) Infrared Applications"

    SPIE Defense, Security & Sensing Conference, Baltimore, MD, Apr 20-24, 2015 (9451-95) (2015)
  • H. Lotfi, L. Lei, L. Lia, R.Q. Yang, J.C. Keay, M.B. Johnson, Y. Qiu, D. Lubyshev, J.M. Fastenau, and A.W.K. Liu

    "Long-wavelength Interband Cascade Infrared Photodetectors Operating Above Room Temperature"

    Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, Eds. M. Razeghi, E. Tournié, and G.J. Brown, 937032 (February 8, 2015); doi:10.1117/12.2077844; SPIE Photonics West 2015, San Francisco, CA, Feb 7-12, 2015 (9370-93). (2015)
  • J.C. Rode, H.-W. Chiang, P. Choudhary, V. Jain, B. J. Thibeault, W.J. Mitchell, M.J.W. Rodwell, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J.M. Fastenau, and A.W.K. Liu

    "An InGaAs/InP DHBT with Simultaneous fτ / fmax 404 / 901 GHz and 4.3 V Breakdown Voltage"

    J. Electron Dev. Soc. 3, 54 (2015) (2015)
  • A.Y. Liu, C. Zhang, J. Norman, A. Snyder, D. Lubyshev, J.M. Fastenau, A.W.K. Liu, A.C. Gossard, and J.E. Bowers

    "Quantum Dots versus Quantum Wells on Silicon"

    18th International Conference on Molecular Beam Epitaxy, Flagstaff, AZ, Sep 7-12, 2014, Fr-A2-5. (2014)
  • M.J. Furlong, A.W.K. Liu, J.M. Fastenau, D. Lubyshev, Y. Qiu, and X.-M. Fang

    "MBE Growth of III-V Infrared Lasers – Production Scaling to Meet Demand"

    NATO SET-210 Specialist Meeting on Novel Infrared Laser Technology for Modern Battlefield Requirements, Salisbury, UK, Jul 24-25, 2014, 10. (2014)
  • R. Harper, A. Morgan, A.W.K. Liu, A. Snyder, D. Hartzell, J. Fastenau, D. Lubychev

    "III/V on Large Diameter Silicon Substrates Using LPCVD Germanium Templates"

    7th Intl. Silicon-Germanium Technology and Device Meeting (2014 ISTDM), Singapore, Jun 2-4, 2014, 3.4. (2014)
  • D. Lubyshev, J.M. Fastenau, Y. Qiu, A.W.K. Liu, E.J. Koerperick, J.T. Olesberg, D. Norton, Jr., and M.J. Furlong

    "Molecular Beam Epitaxy Grown GaSb-based IR Photodetectors"

    SPIE Defense, Security & Sensing Conference, Baltimore, MD, May 5-9, 2014 (9070-47). (2014)
  • A.Y. Liu, C. Zhang, A. Snyder, D. Lubyshev, J.M. Fastenau, A. Liu, A.C. Gossard, and J.E. Bowers

    "High Performance 1.3µm InAs Quantum Dot Lasers Epitaxially Grown on Silicon"

    Optical Fiber Communication Conference 2014, San Francisco, CA, Mar 9-13, 2014 (W4C.5). (2014)
  • D. Lubyshev, J.M. Fastenau, Y. Qiu, Y. Wu, A.W.K. Liu, E. J. Koerperick, J.T. Olesberg, D. Norton, Jr. , and M.J. Furlong

    "GaSb-based Photodetectors Covering Short-wave to Long-wave IR Grown by Molecular Beam Epitaxy"

    SPIE Photonics West 2014, San Francisco, CA, Feb 1-7, 2014 (8993-53) (2014)
  • A.Y. Liu, C. Zhang, A. Snyder, D. Lubyshev, J.M. Fastenau, A.W.K. Liu, A.C. Gossard, and J.E. Bowers,

    "MBE Growth of 1.3 µm p-doped InAs/GaAs Quantum Dot Lasers on Silicon"

    J. Vac. Sci. Technol. B32, 02C108-1 (2014). (2014)
  • A.Y. Liu, C. Zhang, J. Norman, A. Snyder, D. Lubyshev, J.M. Fastenau, A.W.K. Liu, A.C. Gossard, and J.E. Bowers

    "High Performance Continuous Wave 1.3µm Quantum Dot Lasers on Silicon"

    Appl. Phys. Letts. 104, 041104 (2014) (2014)
  • M.Z. Baten, P. Bhattacharya, T. Frost, S. Deshpande, A. Das, D. Lubyshev, J.M. Fastenau, and A.W.K. Liu

    "GaAs-based High Temperature Electrically Pumped Polariton Laser"

    Appl. Phys. Lett. 104, 231119 (2014). (2014)
  • A. Agrawal, M. Barth, H. Madan, Y.-J. Lee, Y.-R. Lin, C.-H. Wu, C.-H. Ko, C.H. Wann, D. Loubychev, A. Liu, J.M. Fastenau, J. Lindemuth, and S. Datta

    "Comparative Analysis of Hole Transport in Compressively Strained InSb And Ge Quantum Well Heterostructures"

    Appl. Phys. Lett. 105, 052102 (2014). (2014)
  • R. Bijesh, H. Liu, H. Madan, D. Mohata, W. Li, N.V. Nguyen, D. Gundlach, C.A. Richter, J. Maier, K. Wang, T. Clarke, J.M. Fastenau, D. Loubychev, W.K. Liu, V. Narayanan, S. Datta

    “Demonstration of In0.9Ga0.1As/GaAs0.18Sb0.82 Near Broken-gap Tunnel FET with ION=740μA/μm, GM=70μS/μm and Gigahertz Switching Performance at VDs=0.5V”

    IEEE International Electron Device Meeting, Washington, DC, Dec 9 11, (28.2); Technical Digest IEDM (doi: 10.1109/IEDM.2013.6724708) p. 28.2.1. (2013)
  • H.W. Then, S. Dasgupta, M. Radosavljevic, L. Chow, B. Chu-Kung, G. Dewey, S. Gardner, X. Gao, J. Kavalieros, N. Mukherjee, M. Metz, M. Oliver, R. Pillarisetty, V. Rao, S.H. Sung, G. Yang, and R. Chau

    “Experimental Observation and Physics of “Negative” Capacitance and Steeper than 40mV/Decade Subthreshold Swing in Al0.83In 0.17N/AlN/GaN MOS-HEMT on SiC Substrate”

    IEEE International Electron Device Meeting, Washington, DC, Dec 9-11, (28.3); Technical Digest 2013 IEDM (doi: 10.1109/IEDM.2013.6724709). p. 28.3.1. (2013)
  • A.Y. Liu, C. Zhang, A. Snyder, D. Loubychev, J.M. Fastenau, A.W.K. Liu, A. C. Gossard, and J.E. Bowers

    “InAs Quantum Dot Ridge Lasers on Silicon”

    30th North American Conference on Molecular Beam Epitaxy, Banff, Alberta, Canada, Oct 5-9, (S1.2). (2013)
  • D. Lubyshev, J.M. Fastenau, Y. Qiu, Y. Wu, and A.W.K. Liu

    “MBE Growth of Short-infrared nBn Photodetectors Based on GaSb/InPSb/AlGaAsSb Material Systems”

    30th North American Conference on Molecular Beam Epitaxy, Banff, Alberta, Canada, Oct 5-9 (Tu3.5). (2013)
  • D. Lubyshev, J.M. Fastenau, Y. Wu, and A.W.K. Liu

    “MBE Growth of InP-based FET & HBT Structures on Si”

    2013 European Materials Research Society Fall Meeting (E-MRS), Warsaw, Poland, September 16-20 (A3-1) invited. (2013)
  • M. Barth, A. Agrawal, A. Ali, J. Fastenau, D. Loubychev, W.K. Liu, and S.Datta

    “Compressively Strained InSb MOSFETs with High Hole Mobility for P-Channel Application”

    70th Device Research Conference, University of Notre Dame, Notre Dame, IN, June 23-26, 2013, II.A-6; Digest 2013 DRC (ISSN: 1548-3770, E ISBN: 978-1-4799-0811-0, IEEE, New Jersey), p. 21. (2013)
  • M.J. Furlong, R. Martinez, S. Amirhaghi, D. Small, B. Smith, A. Mowbray, D. Lubyshev, J.M. Fastenau, Y. Qiu, and A.W.K. Liu

    “Multiwafer Production of Epitaxy-ready 4" GaSb: Substrate Performance Assessments Pre- and Post-epitaxial Growth”

    Proc. SPIE 8704, Infrared Technology and Applications XXXIX, Eds. B.F. Andresen, G.F. Fulop, C.M. Hanson, P.R. Norton, and P. Robert, 870411 (June 11), doi: 10.1117/12.2016681. (2013)
  • D. Lubyshev, J.M. Fastenau, Y. Qiu, A.W.K. Liu, E.J. Koerperick, J.T. Olesberg, D. Norton, N.N. Faleev, C.B. Honsberg

    “MBE Growth of Sb-based nBn Photodetectors on Large Diameter GaAs Substrates”

    Proc. SPIE 8704, Infrared Technology and Applications XXXIX, Eds. B.F. Andresen, G.F. Fulop, C.M. Hanson, P.R. Norton, and P. Robert, 870412 (June 11), doi: 10.1117/12.2016681. (2013)
  • A.W.K. Liu

    “Direct Heteroepitaxy for Monolithic III-V on Si Integration”

    Nanoelectronics and Nanophotonics Workshop, Hong Kong University of Science and Technology, Hong Kong, May 27-29 (invited). (2013)
  • M.J. Furlong, R. Martinez, S. Amirhaghi, D. Small, B. Smith, A. Mowbray, D. Lubyshev, J.M. Fastenau, Y. Qiu, and A.W.K. Liu

    “Multiwafer Production of Epitaxy-ready 4" GaSb: Substrate Performance Assessments Pre and Post-epitaxial Growth”

    SPIE Defense, Security & Sensing Conference, Baltimore, MD, Apr 29 May 27, (8704-36). (2013)
  • D. Lubyshev, J.M. Fastenau, Y. Qiu, and A.W.K. Liu

    “MBE Growth of Sb-based nBn Photodetectors on Large Diameter GaAs Substrates”

    SPIE Defense, Security & Sensing Conference, Baltimore, MD, Apr 29-May 27 (8704-37). (2013)
  • H. Liu, Y. Zhang, S. L. Chuang, R. Dupuis, and A. Liu

    “Micro-Raman Study of InAs/GaSb Superlattices from Front and Cleaved Edge”

    American Physical Society March Meeting, Baltimore, MD, March 18-22, W23.0002; Bulletin of the American Physical Society 58(1). (2013)
  • Y. Zhu, N. Jain, D.K. Mohata, S. Datta, D. Lubyshev, J. M. Fastenau, A.W.K. Liu, and M.K. Hudait

    “Band Offset Determination of Mixed As/Sb Type-II Staggered Gap Heterostructure for N-Channel Tunnel Field Effect Transistor Application”

    J. Appl. Phys. 113, 024319. (2013)
  • J.M. Fastenau, D. Lubyshev, Y. Qiu, A.W.K. Liu, E.J. Koerperick, J.T. Olesberg, and D. Norton, Jr

    “MBE Growth of GaSb-based Photodetectors on 6 inch Diameter GaAs Substrates via Select Buffers”

    J. Vac. Sci. and Technol. B31, 03C106-1. (2013)
  • E. Lobisser, J.C. Rode, V. Jain, H.-W. Chiang, A. Baraskar, W.J. Mitchell, B.J. Thibeault, M.J.W. Rodwell, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J.M. Fastenau, and A.W.K. Liu

    “InGaAs/InP DHBTs with Emitter and Base Defined through Electron-Beam Lithography for Reduced Ccb and Increased RF Cut-off Frequency”

    Phys. Status Solidi C, 10, 769 (2013)
  • J.M. Fastenau D. Lubyshev, Y. Qiu, A.W.K. Liu, E.J. Koerperick, J.T. Olesberg, and D. Norton, Jr

    “Sb-based IR Photodetector Epiwafers on 100 mm GaSb Substrates Manufactured by MBE”

    Infrared Phys. Technol. 59,158 (2013)
  • E. Lobisser, J.C. Rode, V. Jain, H.-W. Chiang, A. Baraskar, W.J. Mitchell, B.J. Thibeault, M.J.W. Rodwell, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J.M. Fastenau, and A.W.K. Liu

    “InGaAs/InP DHBTs with Emitter and Base Defined through Electron-Beam Lithography for Reduced Ccb and Increased RF Cut-off Frequency”

    24th InP and Related Materials Conference, Santa Barbara, CA, Aug 27–30, Th-1C.2. (2012)
  • E.H. Steenbergen, B.C. Connelly, G.D. Metcale, P.H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J.M. Fastenau, A.W.K. Liu, S. Elhamri, O.O. Cellek, and Y. -H. Zhang

    "Study of the Minority Carrier Lifetime in Mid Wavelength Infrared InAs/InAs1-xSbx Type-II Superlattices"

    SPIE Optics + Photonics Conference, San Diego, CA, August 12/16, (8512-20). (2012)
  • Yuanzheng Yue, Zongyang Hu, Jia Guo, Berardi Sensale-Rodriguez, Guowang Li, Ronghua Wang, Faiza Faria, Tian Fang, Bo Song, Xiang Gao, Shiping Guo, Thomas Kosel, Gregory Snider, Patrick Fay, Debdeep Jena, and Huili Xing

    "InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and fT of 370 GHz"

    IEEE Electron Device Letters, 7 June. (2012)
  • A.W.K. Liu, D. Lubyshev, Y. Qiu, J.M. Fastenau, E.J. Koerperick, J.T. Olesberg, and D. Norton, Jr.

    “Production MBE Growth of Sb-based IR Detector Materials on Large Diameter Substrates”

    Quantum Structured Infrared Photodetector Intl. Conf. (QSIP), Cargèse, Corsica, France, June 17–22, Th-2a. (2012)
  • D.K. Mohata, B. Rajamohanan, Y. Zhu, M.K. Hudait, R. Southwick, Z. Chbili, D. Gundlach, J. Suehle, J.M. Fastenau, D. Loubychev, A. Liu, T.S. Mayer, V. Narayanan, and S. Datta

    “Demonstration of Improved Heteroepitaxy, Scaled Gate Stack and Reduced Interface States Enabling Heterojunction Tunnel FETs with High Drive Current and High On-Off Ratio”

    IEEE Symposium on VLSI Technology, Honolulu, HI, June 12/14 (6.5). (2012)
  • L.P. Allen, J.P. Flint, G. Meshew, G. Dallas, D. Bakken, J. Trevethan, D. Lubyshev, Y. Qiu, J.M. Fastenau, and A.W.K. Liu

    “100mm GaSb Substrate Flatness for IRFPA Epi Growth”

    SPIE Defense, Security & Sensing Conference, Baltimore, MD, April 22/27 (8353-56); Proc. SPIE Vol. 8353, Infrared Technology and Applications XXXVIII, Eds. B.F. Andresen, G.F. Fulop, and P.R. Norton, (doi: 10.1117/12.919287, SPIE, Bellingham, WA 2012), 835313-1. (2012)
  • E.H. Steenbergen, O. Cellek, Y-H Zhang, D. Lubyshev, Y. Qiu, J.M. Fastenau, and A.W.K. Liu

    “Valence band Offset Study for InAs/InAsSb Superlattice Infrared Detectors”

    SPIE Photonics West 2012, San Francisco, CA, Jan 21 62 (8268-19); Proc. SPIE Vol. 8268, Quantum Sensing and Nanophotonic Devices IX, Eds. M. Razeghi, E. Tournie and G.J. Brown, (doi: 10.1117/12.909614, SPIE, Bellingham, WA), 82680K-1. (2012)
  • D. Lubyshev, Y. Qiu, J.M. Fastenau, A.W.K. Liu, E.J. Koerperick, J.T. Olesberg, and D. Norton, Jr.

    “Manufacturable MBE Growth Process for Sb-based Superlattices on Large-diameter Substrates”

    SPIE Photonics West 2012, San Francisco, CA, Jan 21-26, 2012 (8268-45, invited); Proc. SPIE Vol. 8268, Quantum Sensing and Nanophotonic Devices IX, Eds. M. Razeghi, E. Tournie and G.J. Brown, (doi: 10.1117/12.909571, SPIE, Bellingham, WA 2012), 82681A-1 (2012)
  • L. P. Allen; J. P. Flint; G. Meshew; J. Trevethan; M. J. Furlong; B. Martinez; A. Mobray

    "Surface chemistry improvement of 100mm GaSb for advanced space based applications"

    Quantum Sensing and Nanophotonic Devices IX, Manijeh Razeghi; Eric Tournie; Gail J. Brown, Editors, 826819, 20 January. (2012)
  • E.H. Steenbergen, B.C. Connelly, G.D. Metcale, P.H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J.M. Fastenau, A.W.K. Liu, S. Elhamri, O.O. Cellek, and Y. -H. Zhang

    “One giant leap for IR technology”

    Compound Semiconductor Magazine, 18, Jan/Feb (p. 25). (2012)
  • Steenbergen, Elizabeth H.; Cellek, Oray O.; Lubyshev, Dmitri; Qiu, Yueming; Fastenau, Joel M.; Liu, Amy W. K.; Zhang, Yong-Hang

    "Study of the valence band offsets between InAs and InAs1-xSbx alloys"

    Quantum Sensing and Nanophotonic Devices IX. Edited by Razeghi, Manijeh; Tournie, Eric; Brown, Gail J. Proceedings of the SPIE, Volume 8268, pp. 82681A-82681A-10. (2012)
  • "Multiwafer production of epitaxy ready 4” GaSb substrates: requirements for epitaxially grown infrared detectors"

    SPIE Photonics West, January. (2012)
  • L. P. Allen, J. P. Flint, G. Meshewm J. Trevethan, G. Dallas, A. Khoshakhlagh, C. J. Hill

    "Manufacturing of 100mm diameter GaSb substrates for advanced space based applications"

    SPIE Photonics West, January. (2012)
  • Lubyshev, Dmitri; Qiu, Yueming; Fastenau, Joel M.; Liu, Amy W. K.; Koerperick, Edwin J.; Olesberg, Jon T.; Norton, Dennis, Jr

    "Manufacturable MBE growth process for Sb-based photodetector materials on large diameter substrates"

    Quantum Sensing and Nanophotonic Devices IX. Edited by Razeghi, Manijeh; Tournie, Eric; Brown, Gail J. Proceedings of the SPIE, Volume 8268, pp. 82681A-82681A-10. (2012)
  • Z. Tian, R.T. Hinkey, R.Q. Yang, D. Lubyshev, Y. Qiu, J.M. Fastenau, W.K. Liu, and M.B. Johnson.

    “Interband Cascade Infrared Photodetectors with Enhanced Electron Barriers and P-type Superlattice Absorbers”

    J. Appl. Phys. 111, 024510. (2012)
  • Y. Zhu, N. Jain, S. Vijayaraghavan, D.K. Mohata, S. Datta, D. Lubyshev, J.M. Fastenau, W.K. Liu, N. Monsegue, and M.K. Hudait

    “Role of InAs and GaAs Terminated Heterointerfaces at Source/Channel on the Mixed As-Sb Staggered Gap Tunnel Field Effect Transistor Structures Grown by Molecular Beam Epitaxy”

    J. Appl. Phys. 112, 024306. (2012)
  • E. H. Steenbergen, BC. Connelly, G. D. Metcalfe, H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J.M. Fastenau, A.W.K. Liu, S. Elhamri, O.O. Cellek, and Y.-H. Zhang

    “Temperature-dependent minority carrier lifetimes of InAs/InAs1-xSbx type-II Superlattices”

    Proc. SPIE Vol. 8512, Infrared Sensors, Devices, and Applications II, Eds. P.D. LeVan; A.K. Sood; P.S. Wijewarnasuriya; A.I. D'Souza, (ISBN 9780819492296, SPIE, Bellingham, WA). (2012)
  • D. Mohata, B. Rajamohanan, T. Mayer, V. Narayanan, J. Fastenau, D. Lubyshev, A.W.K. Liu, and S. Datta

    “Barrier Engineered Arsenide-Antimonide Hetero-junction Tunnel FETs with Enhanced Drive Current”

    IEEE Electron Dev. Letts., DOI: 10.1109/LED.2012.2213333 (2012)
  • Y. Zhu, N. Jain, D.K. Mohata, S. Datta, D. Lubyshev, J. M. Fastenau, A.W.K. Liu, and M.K. Hudait

    “Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure”

    Appl. Phys. Letters., 101, 112106. (2012)
  • G N. Mukherjee, J. Boardman, B. Chu-Kung, G. Dewey, A. Eisenbach, J. Fastenau, J. Kavalieros, W.K. Liu, D. Lubyshev, M. Metz, K. Millard, M. Radosavljevic, T. Stewart, H.W. Then, P. Tolchinsky, and R. Chau

    “MOVPE III-V Material Growth on Silicon Substrates and its Comparison to MBE for Future High Performance and Low Power Logic Applications”

    IEEE International Electron Device Meeting (IEDM), Washington, DC, Dec 5-7 (35.1, invited). (2011)
  • G. Dewey, B. Chu-Kung, J. Boardman, J.M. Fastenau, J. Kavalieros, W.K. Liu, D. Lubyshev, M. Metz, N. Mukherjee, P. Oakey, R. Pillarisetty, M. Radosavljevic, H.W. Then, and R. Chau

    “Fabrication, Characterization, and Physics of III-V Heterojunction Tunneling Field Effect Transistors (H-TFET) for Steep Sub-Threshold Swing”

    IEEE International Electron Device Meeting (IEDM), Washington, DC, Dec 5-7 (33.6). (2011)
  • M. Radosavljevic, G. Dewey, D. Basu, J. Boardman, B. Chu-Kung, J.M. Fastenau, S. Kabehie, J. Kavalieros, V. Le, W.K. Liu, D. Lubyshev, M. Metz, K. Millard, N. Mukherjee, L. Pan, R. Pillarisetty, W. Rachmady, U. Shah, H.W. Then and R. Chau

    “Electrostatics Improvement in 3-D Tri-gate Over Ultra-Thin Body Planar InGaAs Quantum Well Field Effect Transistors with High-K Gate Dielectric and Scaled Gate-to-Drain/Gate-to-Source Separation”

    IEEE International Electron Device Meeting (IEDM), Washington, DC, Dec 5-7 (33.1). (2011)
  • D. K. Mohata, R. Bijesh , S. Mujumdar, C. Eaton, R.E. Herbert, T. Mayer, V. Narayanan, J. Fastenau, D. Loubychev, A. Liu and S. Datta

    “Demonstration of MOSFET-Like On-Current Performance in Arsenide/Antimonide Tunnel FETs with Staggered Hetero-junctions for 300mV Logic Applications”

    IEEE International Electron Device Meeting (IEDM), Washington, DC, Dec 5-7 (33.5). (2011)
  • W.K. Liu, D. Lubyshev, Y. Qiu, and J.M. Fastenau

    “Production MBE growth of Sb-based 6.1A materials on GaSb and InAs substrates”

    International Workshop on 6.1 Å II-VI and III-V Materials and Their Integration, Arizona State University, Tempe, AZ, Nov 8-9 (invited). (2011)
  • V. Jain, J.C. Rode, H.-W. Chiang, A. Baraskar, E. Lobisser, B. J. Thibeault, M.J.W. Rodwell, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J. M. Fastenau, and W.K. Liu

    “1.0 THz fmax InP DHBTs in a Refractory Emitter and Self-aligned Base Process for Reduced Base Access Resistance”

    69th Device Research Conference, University of California, Santa Barbara, CA, June 22-24, VII.B. (2011)
  • D. Wang, D. Donetsky, S. Svensson, S. Suchalkin, G. Belenky, W.K. Liu, J. Fastenau, D. Lubyshev

    “Study of Minority Carrier Lifetime and Background Carrier Concentration in GaSb-InAs Strained-Layer Superlattices and Bulk Epitaxial Layers by Optical Modulation Response”

    53rd Electronic Materials Conference, University of California, Santa Barbara, CA, June 22-24, R3. (2011)
  • V. Jain, E. Lobisser, A. Baraskar, B.J. Thibeault, M.J.W. Rodwell, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J.M. Fastenau, and W.K. Liu

    “InGaAs/InP DHBTs Demonstrating Simultaneous fτ/fmax ~ 460/850 GHz in a Refractory Emitter Process”

    23rd InP and Related Materials Conference, Berlin, Germany, May 22–26. (2011)
  • V. Jain, E. Lobisser, A. Baraskar, B.J. Thibeault, M.J.W. Rodwell, D. Loubychev, A. Snyder, Y. Wu, J.M. Fastenau, and W.K. Liu

    “InGaAs/InP DHBTs in a Planarized, Etch-back Technology for Base Contacts”

    38rd International Symposium on Compound Semiconductors, Berlin, Germany, May 22–26, Th-2B. (2011)
  • G. Belenky, S. Svensson, D. Donetsky, S. Suchalkin, D.Wang, D. Westerfeld, W. K. Liu, J. Fastenau, D. Lubyshev

    “Effects of the Phonon Energy and Carrier Concentration on the Carrier Lifetime in LWIR and MWIR Type-2 SLS and MCT Materials for IR Photodetector Technology”

    SPIE Defense, Security, and Sensing 2011, Orlando, FL, Apr 25 – 29, 8012-28. (2011)
  • T.E. Kazior, J.R. LaRoche, W. Hoke, E.A. Fitzgerald, M. Bulsara, M. Urteaga, J. Bergman, M.-J. Choe, K.-J. Lee, M. Seo, T. Seong, A. Yen, D. Lubyshev, J. M. Fastenau, and A.W.K. Liu

    "Integration of III-V Transistors and Si CMOS on Silicon Substrates: A Path to Adaptable, Reconfigurable, High Performance Integrated Circuits"

    36th Annual GOMACTech Conference, Orlando FL, Mar 21-24 (2.4). (2011)
  • V. Jain, E. Lobisser, A. Baraskar, B.J. Thibeault, M.J.W. Rodwell, Z. Griffith, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J.M. Fastenau, and W.K. Liu

    "InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous fτ/fmax ~ 430/800 GHz"

    IEEE Electron Dev. Letts. 32, 24 (2011)
  • D. Mohata, S. Mookerjea, A. Agrawal, Y. Li, T. Mayer, V. Narayanan, A. Liu, D. Loubychev, J. Fastenau, and S. Datta

    “Experimental Staggered-Source and N+ Pocket-Doped Channel III–V Tunnel Field-Effect Transistors and Their Scalabilities”

    Appl. Phys. Express 4, 024105. (2011)
  • Z. Tian, R.Q. Yang, D. Lubyshev, Y. Qiu, J.M. Fastenau, W.K. Liu, J.F. Klem, and M.B. Johnson

    “Development of Interband Cascade Infrared Photodetectors”

    Proc. SPIE Vol. 8012, Infrared Technology and Applications XXXVII, Eds. B.F. Andresen, G.F. Fulop, and P.R. Norton, (ISBN 9780819485861, SPIE, Bellingham, WA 2011), 80122U. (2011)
  • E.H. Steenbergen, B.C. Connelly, G.D. Metcalfe, H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J.M. Fastenau, A.W.K. Liu, S. Elhamri, O.O. Cellek, and Y. -H. Zhang

    “Significantly Improved Minority Carrier Lifetime Observed in a Long-Wavelength Infrared III-V Type-II Superlattice Comprised of InAs/InAsSb”

    Appl. Phys. Letts. 99, 251110. (2011)
  • M. Radosavljevic, G. Dewey, J.M. Fastenau*, J. Kavalieros, R. Kotlyar, B. Chu-Kung, W. K. Liu*, D. Lubyshev*, M. Metz, K. Millard, N. Mukherjee, L. Pan, R. Pillarisetty, W. Rachmady, U. Shah, R. Chau, Intel Corporation, *IQE, Inc.

    "Non-Planar, Multi-Gate InGaAs Quantum Well Field Effect Transistors with High-K Gate Dielectric and Ultra-Scaled Gate-to-Drain/Gate-to-Source Separation for Low Power Logic Applications"

    2010 International Electron Devices Meeting (IEDM), San Francisco, CA, December 6-8. (2010)
  • T.E. Kazior, J.R. LaRoche, D. Lubyshev, J.M. Fastenau, W.K. Liu, M. Urteaga, J. Bergman, M.J. Choe, K.J. Lee, T. Seong, M. Seo, A. Yen, M.T. Bulsara, E.A. Fitzgerald, D. Smith, D. Clark, R.F. Thompson, C. Drazek, E. Guiot

    “High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate”

    IEEE 2010 Compound Semiconductor Conference, Monterey, CA, Oct. 3–6 (1092), TH1C. (2010)
  • D. Lubyshev, J.M. Fastenau, Y. Wu, W.K. Liu, M.T. Bulsara, E.A. Fitzgerald, M. Urteaga, W. Ha, J. Bergman, M.J. Choe, B. Brar, W.E. Hoke, J.R. LaRoche, T.E. Kazior, D. Smith, D. Clark, R.F. Thompson, C. Drazek, N. Daval, L. Benaissa, and E. Augendre

    “Molecular Beam Epitaxy Growth of High Mobility Compound Semiconductor Devices for Integration with Si CMOS"

    IBM Materials Research Community Workshop on III-V Compound Semiconductors, Zurich, Switzerland, Sep. 20–21 (invited). (2010)
  • V. Jain, E. Lobisser, A. Baraskar, B. J. Thibeault, M. Rodwell, Z. Griffith, M. Urteaga, S. T. Bartsch, D. Loubychev, A. Snyder, Y. Wu, J. M. Fastenau, and W.K. Liu

    "High Performance 110 nm InGaAs/InP DHBTs in Dry-etched in situ Refractory Emitter Contact Technology”

    68th Device Research Conference, University of Notre Dame, IN, June 21-23, 2010, IV.A-2. (2010)
  • R. Martinez, S. Amirhaghi, M.J. Furlong, D. Loubychev, J. Fastenau, and A.W.K. Liu

    “Epitaxy Ready 4” GaSb Substrates: Requirements for MBE Grown Type II Superlattice Infrared Detectors”

    Proc. SPIE Vol. 7660, Defense, Security, and Sensing 2010, Orlando, FL, Apr 5 – 9, 2010, 7660-48 (invited). (2010)
  • X. Gu, D. Lubyshev, J. Batzel, J.M. Fastenau, W.K. Liu, R. Pelzel, J.F. Magana, Q. Ma, and V.R. Rao

    “Growth, Characterizations and Uniformity Analysis of 200 mm Wafer-scale SrTiO3/Si,”

    J. Vac. Sci. Technol. B28, C3A12 (2010)
  • W.E. Hoke, T.D. Kennedy, J. LaRoche, A. Torabi, J. Bettencourt, P. Saledas, C.D. Lee, P.S. Lyman, T.E. Kazior, M.T. Bulsara, E.A. Fitzgerald, D. Lubyshev and W.K. Liu

    “Molecular Beam Epitaxial Growth and Properties of GaAs Pseudomorphic High Electron Mobility Transistors on Silicon Composite Substrates,”

    J. Vac. Sci. Technol. B28, C3H1 (2010)
  • “MBE Growth of Sb-based Type-II Strained Layer Superlattice Structures on Multi wafer Production Reactor,”

    Proc. SPIE Vol. 5074, Infrared Technology and Applications XXXVI, Eds. , (ISBN 9780819481245, SPIE, Washington, 2010), 76601J (invited). (2010)
  • R. Martinez, S. Amirhaghi, M.J. Furlong, D. Loubychev, J. Fastenau, and A.W.K. Liu

    “Large-format dual-broadband QWIP focal plane array imaging interferometers”

    Proc. SPIE Vol. 5074, Infrared Technology and Applications XXXVI, Eds. B.F. Andresen, G.F. Fulop, and P.R. Norton, (ISBN 9780819481245, SPIE, Washington, 2010), 76601K (invited). (2010)
  • X. Gu, D. Lubyshev, J. Batzel, J.M. Fastenau, W.K. Liu, R. Pelzel, J.F. Magana, Q. Ma, and V.R. Rao

    “Growth, Characterizations and Uniformity Analysis of 200 mm Wafer-scale SrTiO3/Si”

    J. Vac. Sci. Technol. B28, C3A12 (2010)
  • W.E. Hoke, T.D. Kennedy, J. LaRoche, A. Torabi, J. Bettencourt, P. Saledas, C.D. Lee, P.S. Lyman, T.E. Kazior, M.T. Bulsara, E.A. Fitzgerald, D. Lubyshev and W.K. Liu

    “Molecular Beam Epitaxial Growth and Properties of GaAs Pseudomorphic High Electron Mobility Transistors on Silicon Composite Substrates”

    J. Vac. Sci. Technol. B28, C3H1 (2010)
  • M. Radosavljevic, B. Chu-Kung, S. Corcoran, G. Dewey, M. K. Hudait, J. M. Fastenau*, J. Kavalieros, W. K. Liu*, D. Lubyshev*, M. Metz, K. Millard, N. Mukherjee, W. Rachmady, U. Shah, and Robert Chau

    "Advanced High-K Gate Dielectric for High-Performance Short-Channel In0.7Ga0.3As Quantum Well Field Effect Transistors on Silicon Substrate for Low Power Logic Applications"

    2009 International Electron Devices Meeting (IEDM), Baltimore, MD, December 7-9. (2009)
  • Y.Q. Wu*, M. Xu, R. Wang, O. Koybasi, and P.D. Ye

    “Experimental Demonstration of 100nm Channel Length In0.53Ga0.47As-based Vertical Inter-band Tunnel Field Effect Transistors (TFETs) for Ultra Low-Power Logic and SRAM Applications”

    2009 International Electron Devices Meeting (IEDM), Baltimore, MD, December 7-9. (2009)
  • Y.Q. Wu*, M. Xu, R. Wang, O. Koybasi, and P.D. Ye

    “High-performance Deep-submicron Inversion-mode InGaAs MOSFETs with Maximum Gm exceeding 1.1 mS/µm: New HBr Pretreatment and Channel Engineering,”

    2009 International Electron Devices Meeting (IEDM), Baltimore, MD, December 7 9. (2009)
  • Y.Q. Wu*, R. Wang, T. Shen, J.J. Gu, and P.D. Ye

    “First Experimental Demonstration of 100 nm Inversion-mode InGaAs FinFET through Damage-free Sidewall Etching,”

    2009 International Electron Devices Meeting (IEDM), Baltimore, MD, December 7-9 (2009)
  • B.S. Ooi, H.S. Djie, Y. Wang, C.-L. Tan, J.C.M. Hwang, X.-M. Fang, J.M. Fastenau, A.W.K. Liu, G.T. Dang, and W.H. Chang

    "Quantum Dashes on InP Substrate for Broadband Emitter Applications"

    IEEE J. Selected Topics in Quantum Electron. 14, 1230 invited. (2008)
  • W.K. Liu, D. Lubyshev, J.M. Fastenau, Y. Wu, M.T. Bulsara and E.A. Fitzgerald, M. Urteaga, W. Ha, J. Bergman, B. Brar, W.E. Hoke, J.R. LaRoche, K.J. Herrick, T.E. Kazior, D. Clark, D. Smith, R.F. Thompson, C. Drazek, and N. Daval

    "Monolithic Integration of InP-based Transistors on Si substrates using MBE"

    15th International Conference on Molecular Beam Epitaxy, Vancouver, Canada, August 3–8, (THA1.1, invited). (2008)
  • W. Ha, M. Urteaga, J. Bergman, B. Brar, W.K. Liu, D. Lubyshev, J.M. Fastenau, Y. Wu, M.T. Bulsara, E.A. Fitzgerald, W.E. Hoke, J.R. LaRoche, K.J. Herrick, T.E. Kazior, D. Clark, D. Smith, R.F. Thompson, C. Drazek, and N. Daval

    "Small-area InP DHBTs Grown on Patterned Lattice-engineered Silicon Substrates"

    66th Device Research Conference, Santa Barbara, CA, June 23–25, (IV.B-9). (2008)
  • Y. Wang, H.S. Djie, V. Hongpinyo, C.-L. Tan, B.-S. Ooi, J. Hwang, X.-M. Fang, Y. Wu, J. Fastenau, A. Liu, G. Dang, W. Chang

    "Epitaxial Growth of High Quality InAs/InGaAlAs Quantum Dash-in-well Structure on InP"

    20th InP and Related Materials Conference, Versailles, France, May 25–29, (WP8). (2008)
  • D. Lubyshev, J.M. Fastenau, Y. Wu, W.K. Liu, M. Urteaga, W. Ha, J. Bergman, B. Brar, M.T. Bulsara, E.A. Fitzgerald, W.E. Hoke, J.R. LaRoche, K.J. Herrick, and T.E. Kazior

    "Direct Growth of InP-HBT Structures on Ge-on-Insulator/Si Substrates by MBE"

    20th InP and Related Materials Conference, Versailles, France, May 25–29 (MoB2.3) (2008)
  • D. Lubyshev, J.M. Fastenau, W.K. Liu

    "IQE’s Epiwafers Unite III-Vs and Silicon"

    Compound Semiconductor Magazine, 14, April (p. 25). (2008)
  • D Troy, A Eisenbach, P Cooke, A Pearce, G Clarke, I Davies, S Barne

    "Integration and Qualification of a Second Site HBT Epitaxial Wafer Foundry"

    CS-Mantech, Chicago, April (2008)
  • K.J. Herrick, M. Urteaga, A.W.K. Liu, D.I. Loubychev, J.M. Fastenau, E. Fitzgerald, M. Bulsara, B. Brar, W. Ha, J. Bergman, T. Kazior, N. Daval

    "Direct Growth of III-V Devices on Silicon"

    MRS Spring Meeting, San Francisco, CA, March 24−28 (C2.1). (2008)
  • K.J. Herrick, E. Fitzgerald, A. Liu, B. Brar, M. Urteaga, M. Bulsara, D. Clark, and T. Kazior

    "Direct Growth of Compound Semiconductors on Silicon"

    33rd Annual GOMACTech Conference, Las Vegas, NV, March 17 20,(9.2). (2008)
  • Y. Wang, H.S. Djie, B.S. Ooi, J.C.M. Hwang, X.-M. Fang, Y. Wu, J.M. Fastenau, W.K. Liu, G.T. Dang and W.H. Chang

    "Monolithic InAs/InAlGaAs/InP Quantum-Dash-in-Well Extended Cavity Laser Fabricated By Postgrowth Intermixing"

    Laser Physics, 18, 400 (2008)
  • H.S. Djie, Y. Wang, B.S. Ooi, D.-N. Wang, J.C.M. Hwang, Y. Wu, X.-M. Fang, J.M. Fastenau, W.K. Liu, G.T. Dang, and W.H. Chang

    "Quantum Dash Intermixing"

    IEEE J. Selected Topics in Quantum Electron. 14, 1239 (2008)
  • M.K. Hudait, S. Datta, G. Dewey, J.M. Fastenau, J. Kavalieros, W.K. Liu, D. Loubychev, R. Pillarisetty, M. Radosavljevic and R. Chau

    "Heterogeneous Integration of Enhancement Mode In0.7Ga0.3As Quantum Well Transistor on Silicon Substrate using Composite Buffer Architecture for High-Speed and Low-voltage (e.g., 0.5V) Digital Logic Applications"

    IEEE International Electron Device Meeting (IEDM), Washington, DC, Dec 10-12 (23.5). (2007)
  • D. Lubyshev, J. M. Fastenau, W.K. Liu, Y. Wu, M. T. Bulsara, E. A. Fitzgerald, and W. E. Hoke

    "MBE Growth of M-HEMTs and M-HBTs on Ge and Ge-on-Insulator Substrates"

    25th North American Conference on Molecular Beam Epitaxy, Albuquerque, NM, Sep. 23–26 (Tu5.2). (2007)
  • E. Lind, A.M. Crook, Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A.W.K. Liu

    "560 GHz ft, fmax InGaAs/InP DHBT in a Novel Dry-etch Emitter Process"

    65th Device Research Conference, University of Notre Dame, IN, June 18-20 V.B-7. (2007)
  • T. Yang, Y. Xuan, P. Ye, W. Wang, J.C.M. Hwang, D. Lubyshev, J.M. Fastenau, W.K. Liu, T.D. Mishima, and M.B. Santos

    "Capacitance-Voltage Characterization of InSb MOS Structures with ALD High-k Gate Dielectrics"

    49th Electronic Materials Conference, University of Notre Dame, IN, June 20-22 (2007)
  • Z. Griffith, E. Lind, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A.W.K. Liu

    "Sub 300nm InGaAs/InP Type-I DHBTs with a 150 nm Collector, 30 nm Base Demonstrating 755 GHz fmax and 416 f?"

    19th International Conference on InP and Related Materials, Matsue, Japan, May 14-18, 2007, WeA3-2, (Proceedings ISBN 1-4244-0874-1, IEEE, NJ, 2007, p. 403). (2007)
  • H.S. Djie, D.-N. Wang, B.S. Ooi, J.C.M. Hwang, X.-M. Fang, Y. Wu, J.M. Fastenau, and W.K. Liu

    "Emission wavelength trimming of self-assembled InGaAs/GaAs Quantum Dots with GaAs/AlGaAs superlattices by rapid thermal annealing"

    Thin Solid Films, 515, 4344 (2007)
  • H.S. Djie, B.S. Ooi, X.-M. Fang, Y. Wu, J.M. Fastenau, W.K. Liu, and M. Hopkinson

    “Room Temperature Broadband Emission of an InGaAs/GaAs Quantum Dots Laser

    Optics Letts. 32, 44, Virtual J. Nanoscale Sci. Technol. 15(2) (2007)
  • H.S. Djie, Y. Wang, B.S. Ooi, D.-N. Wang, J.C.M. Hwang, X.-M. Fang, Y. Wu, J.M. Fastenau, W.K. Liu, G.T. Dang, and W.H. Chang

    "Wavelength Tuning of InAs/InAlGaAs Quantum-dash-in-well Laser Using Postgrowth Intermixing"

    Electron. Letts. 43, 33. (2007)
  • H.S. Djie, Y. Wang, B.S. Ooi, D.-N. Wang, J.C.M. Hwang, Y. Wu, X.-M. Fang, J.M. Fastenau, and A.W.K. Liu, G.T. Dang, and W.H. Chang

    "Postgrowth Wavelength Engineering of InAs/InAlGaAs/InP Quantum-dash-in-well Lasers"

    SPIE Photonics West OPTO 2007 Symposium OE11: Optoelectronic Integrated Circuits XI (6476-28), San Jose, Jan 20-25 (2007)
  • H.S. Djie, C.L. Tan, B.S. Ooi, J.C.M. Hwang, X.-M. Fang, Y. Wu, J.M. Fastenau, W.K. Liu, G.T. Dang, and W.H. Chang

    "Ultrabroad Stimulated Emission from Quantum-dash Laser"

    Appl. Phys. Lett. 91, 111116 (2007)
  • S. Datta, G. Dewey, J.M. Fastenau, M.K. Hudait, D. Loubychev, W.K. Liu, M. Radosavljevic, W. Rachmady and R. Chau

    "Ultra High-Speed, 0.5V Supply Voltage In0.7Ga0.3As Quantum-Well Transistors on Silicon Substrate"

    IEEE Electron Device Letts. 28, 685 (2007)
  • E. Lind, Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A.W.K. Liu

    "250 nm InGaAs/InP DHBTs w/ 650 GHz fmax and 420 GHz ft, Operating Above 30 mW/mm2"

    64th Device Research Conference, Penn State University, PA, June 26-28 (2006)
  • R T Blunt

    "Interferometry speeds surface roughness analysis"

    Compound Semiconductor, June 2006 12(5) 18 - 21 (2006)
  • Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A.W.K. Liu

    "In0.53G0.47aAs/InP DHBTs with a 75 nm Collector, 20 nm Base Demonstrating 544 GHz ft, BVCEO = 3.1 V, and BVCBO = 3.4 V"

    18th International Conference on InP and Related Materials, Princeton, NJ, May 8-11, MB-2.5. (2006)
  • R T Blunt

    "White Light Interferometry - A production worthy technique for measuring surface roughness on semiconductor wafers"

    Int. Conf. on Compound Semiconductor Manufacturing Technology, Vancouver BC, Canada, April 24 - 27. (2006)
  • N. Parthasarathy, Z. Griffith, C. Kadow, U. Singisetti, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A.W.K. Liu

    "Collector-Pedestal InGaAs/InP DHBTs Fabricated in a Single-Growth, Triple-Implant Process"

    IEEE Electron Device Letts. 27, 313. (2006)
  • H.S. Djie, D.-N. Wang, B.S. Ooi, J.C.M. Hwang, X.-M. Fang, Y. Wu, J.M. Fastenau, and W.K. Liu

    "Intermixing of InGaAs Quantum-dots Grown by Cycled Monolayer Deposition"

    J. Appl. Phys. 100, 033527 (2006)
  • H. S. Djie, D.-N. Wang, J. C. M. Hwang and B. S. Ooi, X.-M. Fang, Y. Wu, J. M. Fastenau, and W. K. Liu

    "Emission wavelength trimming of self-assembled InGaAs/GaAs Quantum Dots with GaAs/AlGaAs superlattices by rapid thermal annealing"

    Symp. J: III-V Semiconductors for Microelectronic and Optoelectronic Applications, 3rd Intl. Conf. on Materials for Advanced Technologies (ICMAT) and 9th Intl. Conf. on Advanced Materials (IUMRS-ICAM), Singapore, July 3-8, J-3-OR5. (2005)
  • Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A. Liu

    "InGaAs/InP Type-I DHBTs Having 450 GHz ft and 490 GHz fmax with Ccb/Ic 0.38 ps/V"

    63rd Device Research Conference, Santa Barbara, CA, June 20-22, VII.B-7. (2005)
  • Z. Griffith, M. Dahlström, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A.W.K. Liu

    "In0.53G0.47aAs/InP Type-I DHBTs with 100 nm Collector and 491 GHz ft, 415 GHz fmax"

    17th International Conference on InP and Related Materials, Glasgow, Scotland, UK, May 8-12, TuA-2.4. (2005)
  • W.K. Liu, J.M. Fastenau, D. Lubyshev, X.-M. Fang, Y. Wu, and C. Doss

    "InP Substrate Evaluation for Epi-Ready MBE Growth"

    17th International Conference on InP and Related Materials, Glasgow, Scotland, UK, May 8-12, TP-15. (2005)
  • J.M. Fastenau, W.K. Liu, D. Lubyshev, X.-M. Fang, Y. Wu, and C. Doss

    "Evaluation of 4" InP Substrates for Epi-Ready Production MBE Growth"

    International Conference on Compound Semiconductor Manufacturing Technology, New Orleans, LA, April 11-14, 4.5. (2005)
  • L. Blunt, J. Armstrong, & R. Blunt

    "The use of advanced 3D surface metrology for the characterisation of epi-wafers and Si structures"

    Phys. Stat. Sol., C 2, No 4, 1251-1258. (2005)
  • Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu

    "InGaAs/InP DHBTs with 120 nm collector having simultaneously high ft, fmax > 450 GHz"

    IEEE Electron Device Letts (2005)
  • J.M. Fastenau, D.I. Lubyshev, Y. Wu, C. Doss, and W.K. Liu

    "Comparative Studies of the Epi-Readiness of 4" InP Substrates for MBE Growth"

    J. Vac. Sci. Technol. B, 23. (2005)
  • Z. Griffith, M. Dahlström, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu

    "InGaAs/InP DHBTs for Increased Digital IC Bandwidth having a 391 GHz ft and 505 GHz fmax"

    IEEE Electron Device Letts. 26, 11. (2005)
  • S.V. Bandara, S.D. Gunapala, J.K. Liu, S.B. Rafol, C.J. Hill, D.Z.Y. Ting, J.M. Mumolo, T.Q. Trinh, J.M. Fastenau, and A.W.K. Liu

    "Tuning and Tailoring of Broadband Quantum-well Infrared Photodetector Responsivity Spectrum"

    Appl. Phys. Letts. 86, 151104. (2005)
  • Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu

    "InGaAs/InP DHBTs with 120 nm collector having simultaneously high ft ,fmax > 450 GHz"

    IEEE Electron Device Letts. 26, 530 (2005)
  • D. Lubyshev, J. M. Fastenau, W.K. Liu, Y. Wu, M. T. Bulsara, E. A. Fitzgerald, and W. E. Hoke

    "MBE Growth of M-HEMTs and M-HBTs on Ge and Ge-on-Insulator Substrates"

    J. Vac. Sci. Technol. B, 26, 1115 (2005)
  • W.K. Liu, D.I. Lubyshev, J.M. Fastenau, Y. Wu, and C. Doss

    "Comparative Studies of the Epi-Readiness of 4" InP Substrtaes for MBE Growth"

    22nd North American Conference on Molecular Beam Epitaxy, Banff, Canada, Oct. 10-14, P23. (2004)
  • J.M. Fastenau, D.I. Lubyshev, X.-M. Fang, C. Doss, Y. Wu, W.K. Liu, S. Bals, Z. Griffith, Y.-M. Kim, and M.J.W. Rodwell

    "Strain Relaxation and Dislocation Filtering in Metamorphic HBT and HEMT structures Grown on GaAs Substrates by MBE"

    16th International Conference on InP and Related Materials, Kagoshima, Japan, May 31-June 4, WP-8. (2004)
  • Martin Murtagh, Pat Kelly, and Roy Blunt

    "Photoreflectance technique reduces need for destructive testing of VCSEL epiwafers"

    Compound Semiconductor, March, 31 - 34. (2004)
  • J. Armstrong & R. Blunt

    "White light interferometry for routine surface roughness measurement in a production environment"

    EXMATEC 2004, Montpellier, France June. (2004)
  • M.E. Murtagh, V. Guenebaut, S.Ward, D. Nee, P.V. Kelly, B. O'Looney, F. Murphy, V. Modreanu, S. Westwater, R. Blunt, & S.W. Bland

    "Photoreflectance spectroscopy study of vertical cavity surface emitting laser structures"

    Thin Solid Films 450 148 - 140. (2004)
  • D.I. Lubyshev, J.M. Fastenau, X.-M. Fang, Y. Wu, C. Doss, A. Snyder, W.K. Liu, M.S.M. Lamb, S. Bals, and C. Song

    "Comparison of As- and P-based Metamorphic buffers for High Performance InP Heterojunction Bipolar Transistor and High Electron Mobility Transistor Applications"

    J. Vac. Sci. Technol. B, 22 1565. (2004)
  • Z. Griffith, M. Dahlström, M. Urteaga, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu

    InGaAs/InP Mesa DHBTs with Simultaneously High ft and fmax and Ccb/Ic Ratio"

    IEEE Electron Device Letts. 25, 250. (2004)
  • J Mimila-Arroyo, V Cabrera, and S W Bland

    "Dependence of burn-in effect on thermal annealing of the GaAs:C base layer in GaInP heterojunction bipolar transistors"

    Applied Physics Letters, 82(17), p2910-2912. (2003)
  • J.Mimila-Arroyo, S.W.Bland and A Lusson

    "Carbon site switching in carbon doped GaAs, its dependence on carbon concentration"

    Superficies y Vacío, 16(1), p37-39. (2003)
  • J Mimila-Arroyo, S W Bland, S Cassette and S L Delage

    "Burn-in effects in GaInP/GaAs/GaAs HBT's"

    Physica Status Solidi, 3, p902-906 (2003)
  • J Vukusic, P Modh, A Larsson, M Hammar, S Mogg, U Christiansson, V Oscarsson, E Ödling, J Malmquist, M Ghisoni, P Gong, E Griffiths, and A Joel

    "MOVPE Grown GaInNAs VCSELs at 1.3 µm with a Conventional Mirror Design Approach"

    Electronics Letters. (2003)
  • D. Lubyshev, J. M. Fastenau, X.-M. Fang, Y. Wu, C. Doss and W.K. Liu

    "Comparison of As- and P-Based Metamorphic Buffers for High Performance InP HBT and HEMT Applications"

    21st North American Conference on Molecular Beam Epitaxy, Keystone, CO, September 29-October 2. (2003)
  • M. Dahlström, Z. Griffith, M. Urteaga, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu

    "InGaAs/InP DHBTs with >370 GHz ft and fmax using a Graded Carbon-Doped InGaAs Base"

    61st Device Research Conference, Salt Lake City, UT, June 23-25. (2003)
  • S. Westwater, S.W. Bland, and R.T. Blunt

    "Rotational effects on particle size and reflectivity dependence upon haze measurements in optical scatterometry"

    E-MRS Spring Meeting, Strasbourg, France, June. (2003)
  • S W Bland, R T Blunt and S Westwater

    "The application of optical metrology in the production of InGaP HBTs"

    E-MRS Spring Meeting, Strasbourg, June. (2003)
  • D.I. Lubyshev, K. Teker, O. Malis,Y. Wu, J.M. Fastenau, X.-M. Fang, C. Doss, A.B. Cornfeld, and W.K. Liu

    "Commercial Production of Large Diameter InP-HBT Epiwafers by MBE"

    International Conference on GaAs Manufacturing Technology, Scottsdale, AZ, May 19-22, 3.3. (2003)
  • J. Lowmaster, R. Pelzel, M. Dydyk, and D. Green

    "Use of Re-etched and Re-polished Epi-wafers for MBE Calibration Substrates"

    International Conference on GaAs Manufacturing Technology, Scottsdale, AZ, May 19-22, 3.2. (2003)
  • D.I. Lubyshev, O. Malis, K. Teker, Y. Wu, J.M. Fastenau, X.-M. Fang, C. Doss, A.B. Cornfeld, and W.K. Liu

    "Production of Next Generation InP-HBT Epiwafers by MBE"

    15th International Conference on InP and Related Materials, Santa Barbara, CA, May 12-16, ThB2.2. (2003)
  • S.V. Bandara, S.D. Gunapala, F.M. Reininger, J.K. Liu, S.B. Rafol, J.M. Fastenau, and A.W.K. Liu

    "Large-format Dual-broadband QWIP Focal Plane Array Imaging Interferometers for Detection of Toxic Gases"

    SPIE-AeroSense Conference, Orlando, FL, April 21-25, 2003, 5074-85 (invited). (2003)
  • A M Joel

    "InGaAsN growth at IQE"

    at International Workshop on 'GaAs based lasers for the 1.3 - 1.5 µm wavelength range', Wroclaw, Poland, April. (2003)
  • S.V. Bandara, S.D. Gunapala, F.M. Reininger, J.K. Liu, S.B. Rafol, J.M. Mumolo, D.Z.Y. Ting, R.W. Chuang, T.Q. Trinh, J.M. Fastenau, and A.W.K. Liu

    "Large-Format Dual-Broadband QWIP Focal Plane Array Imaging Interferometers"

    Proc. SPIE Vol. 5074, Infrared Technology and Applications XXIX, Eds. B.F. Andresen and G.F. Fulop, (ISBN 0-8194-4991-1, SPIE, Washington, 2003), p. 787. (2003)
  • O. Malis, W.K. Liu, C. Gmachl, J.M. Fastenau, A. Joel, P. Gong, S.W. Bland, and N. Moshegov

    "MBE Development of Dilute Nitrides for Commercial Long-wavelength Laser Applications"

    J. Cryst. Growth, 251, 432. (2003)
  • M. Dahlström, X.-M. Fang, D. Lubyshev, M. Urteaga, S. Krishnan, N. Parthasarathy, Y.M. Kim, Y. Wu, J.M. Fastenau, W.K. Liu, and M.J.W. Rodwell

    "Wideband DHBTs using a Graded Carbon-Doped InGaAs Base"

    IEEE Electron Device Letts. 24, 433. (2003)
  • S.D. Gunapala, S.V. Bandara, J.K. Liu, S.B. Rafol, C.A. Shott, R.W. Jones, S. Laband, J.T. Woolaway II, J.M. Fastenau, A.W.K. Liu, M.D. Jhabvala, and K.K. Choi

    "640×512 Pixel Four-Band, Broadband, and Narrowband Quantum Well Infrared Photodetector Focal Plane Arrays"

    Proc. SPIE Vol. 4820, Infrared Technology and Applications XXVIII, Eds. B. Andresen, G.F. Fulop, and M. Strojnik (ISBN 0-8194-4588-6, SPIE, Washington, 2003), p. 306. (2003)
  • G M Lewis, P M Smowton, P Blood, G Jones and S W Bland

    "Measurement of TE and TM spontaneous emission and gain in tensile strained GaInP laser diodes"

    Applied Physics Letters, 80(19), p3488-3490. (2002)
  • J.Mimila-Arroyo, J.Chevallier and S.W.Bland

    "Carbon reactivation kinetics in the base of heterojunction GaInP-GaAs bipolar transistor"

    Applied Physics Letters, 80, p3632 (2002)
  • S W Bland

    "Future challenges for MOVPE - an industrial perspective"

    Journal of Materials Science: Materials in Electronics, 13, p679-682. (2002)
  • K Cherkaoui, M E Murtagh, P V Kelly, G M Crean, S Cassette, S L Delage and S W Bland

    "Defect study of GaInP/GaAs based heterojunction biplar transistor emitter layer"

    Journal of Applied Physics, 92, p2803-2806. (2002)
  • S A Rushworth, L M Smith, M S Ravetz, K M Coward, R Odedra, R Kanjolia, S W Bland, F Dimroth and A W Bett

    "Correlation of reduced oxygen content in precursors with improved MOVPE layer quality"

    ICMOVPE, 2002 [Journal of Crystal Growth (in publication)] (2002)
  • S. Pradhan, P. Bhattacharya, and A.W.K. Liu

    "A monolithically Integrated 1.55mm Photoreceiver-Laser Driver Optoelectronic Integrated Circuit"

    Electronics Letts. 38, 987. (2002)
  • O. Baklenov, D. Lubyshev, Y. Wu, X.-M. Fang, J.M. Fastenau, L. Leung, F.J. Towner, A.B. Cornfeld and W.K. Liu

    "MBE Production of Large-Diameter Metamorphic HEMT and HBT Wafers"

    J. Vac. Sci. Technol. B, 20, 1200. (2002)
  • K.K. Choi, S.V. Bandara, S.D. Gunapala, W.K. Liu, and J.M. Fastenau

    "Detection Wavelength of InGaAs/AlGaAs Quantum Wells and Superlattices"

    J. Appl. Phys. 91, 551. (2002)
  • W. Songprakob, R. Zallen, D.V. Tsu, and W.K. Liu

    "Inter-valenceband and Plasmon Optical Absorption in Heavily-doped GaAs:C"

    J. Appl. Phys. 91, 171. (2002)
  • D.I. Lubyshev, K. Teker, P. Lee, Y. Wu, J.M. Fastenau, X.-M. Fang, C. Doss, A.B. Cornfeld, and W.K. Liu

    "Commercial Production of Large Diameter InP-HBT Epiwafers by MBE"

    Compound Semiconductor Manufacturing Expo, San Jose, CA, November 11-13. (2002)
  • X.-M. Fang, Y. Wu, C. Doss, D.I. Lubyshev, J.M. Fastenau, W.K. Liu, Y.M. Kim, and M.J.W. Rodwell

    "Metamorphic Buffer Comparisons for M-HBT Grown by MBE"

    Compound Semiconductor Manufacturing Expo, San Jose, CA, November 11-13. (2002)
  • T. Hierl, M. O'Steen, R. Droopad, and O. Baklenov

    "GaAs on Si Technology and Its Application to Power Amplifiers"

    International Conference on Solid State Devices and Materials, Nagoya, Japan, September 17-19. (2002)
  • O. Malis, W.K. Liu, J.M. Fastenau, R. Pelzel, K. Evans, A. Joel, P. Gong, S.W. Bland, and N. Moshegov

    "MBE Development of Dilute Nitrides for Commercial Long-wavelength VCSEL Applications"

    12th International Conference on Molecular Beam Epitaxy, San Francisco, CA, September 15-20, TuA1 (2002)
  • J P Connolly, P Abbott, I Ballard, K W J Barnham, C Rohr, R Ginige, B Corbett, G Clarke, S Bland and M Mazzer

    "Characterisation and Modelling of the Spectral Response of Strain Compensated InGaAsP Quantum Well Cells for TPV Applications"

    Fifth Conference on Thermophotovoltaic Generation of Electricity, Rome, Italy, September. (2002)
  • R Ginige, C Kelleher, B Corbett, J Hilgarth and G Clarke

    "The Design, Fabrication and Evaluation of InGaAs/INP TPV Cells for Commercial Applications"

    Fifth Conference on Thermophotovoltaic Generation of Electricity, Rome, Italy, September. (2002)
  • S.V. Bandara, S. D. Gunapala, J.K. Liu, S.B. Rafol, C.A. Shott, R. Jones, S. Laband, J. Woolaway II, J.M. Fastenau, A.W.K. Liu, M. Jhabvala, and K.K. Choi

    "Multiband GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plan Arrays"

    11th Annual AIAA/MDA Technology Conference, Monterey, CA, July 29-August 1. (2002)
  • S.D. Gunapala, S.V. Bandara, J.K. Liu, S.B. Rafol, C.A. Shott, R.W. Jones, S. Laband, J.T. Woolaway II, J.M. Fastenau, A.W.K. Liu, M.D. Jhabvala, and K.K. Choi

    "640×512 Pixel Four-Band, Broadband, and Narrowband Quantum Well Infrared Photodetector Focal Plane Arrays"

    47th Annual Meeting of SPIE, Seattle, WA, July 7-11, 2002, 4820-35 (invited). (2002)
  • M. Dahlström, M. Urteaga, S. Krishnan, N. Parthasarathy, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu

    "Ultra-Wideband DHBTs using a Graded Carbon-Doped InGaAs Base"

    14th International Conference on InP and Related Materials, Stockholm, Sweden, May 12-16, 2002, post-deadline paper (2002)
  • R. Droopad, K. Eisenbeiser, T. Hierl, D. Lubyshev, W. Ooms, M. O'Steen, J. Ramdani, and F. Towner

    "Growth of GaAs on Silicon"

    14th International Conference on InP and Related Materials, Stockholm, Sweden, May 12-16, 2002, A4-7 (invited). (2002)
  • P Abbott, C Rohr, J P Connolly, I Ballard, K Barnham, R Ginige, B Corbett, G Clarke, S W Bland and M Mazzer

    "A comparative study of bulk InGaAs and InGaAs/InGaAs strain compensated quantum well cells for thermophotovoltaic applications"

    29th IEEE Photovoltaic Specialists Conference; New Orleans, USA; May. (2002)
  • Z. Yu, R. Droopad, D. Jordan, J. Curless, Y. Liang, C. Overgaard, H. Li, A. Talin, T. Eschrich, B. Craigo, K. Eisenbeiser, R. Emrick, J. Finder, X. Hu, Y. Wei, J. Edwards, Jr., D. Convey, K. Moore, D. Marshall, J. Ramdani, L. Tisinger, W. Ooms, M. O'Steen, F. Towner, and T. Hierl

    "GaAs-Based Heterostructures on Silicon"

    International Conference on GaAs Manufacturing Technology, San Diego, CA, April 8-11, 2002, 13E (invited). (2002)
  • Y. Wu, D. Lubyshev, X.-M. Fang, J.M. Fastenau, A.B. Cornfeld, W.K. Liu, H. Yang, H. Wang, and K. Radhakrishnan, J.C.M. Hwang

    "A Comparative Study of DC and Microwave Characteristics of Lattice-matched InP HBTs and Metamorphic HBTs Grown by MBE"

    International Conference on GaAs Manufacturing Technology, San Diego, CA, April 8-11, 2002, 13A. (2002)
  • S. D. Gunapala, S.V. Bandara, J.K. Liu, S.B. Rafol, C.A. Shott, R. Jones, S. Laband, J. Woolaway II, J.M. Fastenau, and A.W.K. Liu

    "9 mm Cutoff 640´512 Pixel GaAs/AlxGa1-xAs Quantum Well Infrared Photodetector Hand-held Camera"

    SPIE-AeroSense Conference, Orlando, FL, April 1-5, 2002, 4721-17 (invited), Proc. SPIE Vol. 4721, Infrared Detectors and Focal Plane Arrays VII, Eds. E.L. Dereniak and R.E. Sampson, (ISBN 0-8194-4471-5, SPIE, Washington, 2002), p.144. (2002)
  • K J Weeks, S J C Irvine, A Stafford, S Jones, S W Bland and A Joel

    "In situ reflectance monitoring in MOVPE of a multiwafer reactor"

    "In situ reflectance monitoring in MOVPE of a multiwafer reactor", Materials Science and Engineering, B80, p46-49 (2001)
  • J Mimila-Arroyo, A Lusson, J Chevallier, M Barbé, B Theys, F Jomard and S W Bland

    "Carbon acceptor doping efficiency in GaAs grown by metalorganic chemical vapor deposition"

    Applied Physics Letters, 79, p3095, 2001. (2001)
  • G M Lewis, P M Smowton, P Blood, G Jones and S Bland

    "Measurement of TE and TM Spontaneous Emission and Gain in Tensile Strained GaInP laser diodes"

    (2001)
  • J Mimila-Arroyo and S Bland

    "Carbon Reactivation Kinetics in GaAs; Its Dependence on Dopant Precursor, Doping Level and Layer Thickness"

    (2001)
  • W. Zhou, S. Pradhan, P. Bhattacharya, W.K. Liu, and D. Lubyshev

    "Low-Power Phototransceiver Arrays with Vertically Integrated Resonant-Cavity LEDs and Heterostructure Phototransistors"

    IEEE Photonics Technol. Letts. 13, 1218 (2001)
  • L. Jiang, S.S. Li, M.Z. Tidrow, W.R. Dyer, W.K. Liu, J. Fastenau, and T.R. Yurasits

    "Three-Stack, Three-Color Quantum Well Infrared Photodetector for Mid-, Long-, and Very Long-Wavelength Infrared Detection"

    Appl. Phys. Lett. 79, 2982 (2001)
  • R.K. Ahrenkiel, R. Ellingson, W. Metzger, D.I. Lubyshev, and W.K. Liu

    "Auger Recombination in Heavily Carbon-doped GaAs"

    Appl. Phys. Letts. 78, 1879. (2001)
  • W. Songprakob, R. Zallen, D.V. Tsu, and W.K. Liu

    "Plasmon and inter-valence band absorption in heavily-doped p-type MBE-grown GaAs:C"

    American Physical Society March Meeting, Seattle, WA, March 12-16, 2001, X30.007. (2001)
  • W. Zhou, S. Pradhan. P. Bhattacharya, W.K. Liu, and D. Lubyshev

    Low-Power Phototransreceiver Arrays with Vertically Integrated Resonant-Cavity LEDs and Heterostructure Phototransistors

    14th Annual Meetings of LEOS, La Jolla, CA, November 12-15, 2001, ThU1. (2001)
  • O. Baklenov, D. Lubyshev, Y. Wu, X.-M. Fang, J.M. Fastenau, L. Leung, F.J. Towner, A.B. Cornfeld and W.K. Liu

    "MBE Production of Large-Diameter Metamorphic HEMT and HBT Wafers"

    20th North American Conference on Molecular Beam Epitaxy, Providence, RI, October 1-3, 2001, 5-3 (2001)
  • J. Mirecki Millunchick, S. Manville, D. Lubyshev, X.M. Fang, J. M. Fastenau, W.K. Liu, and S.P. Svensson

    "Morphology and Mobility of Metamorphic HEMT Structures Grown on Misoriented GaAs Substrates"

    20th North American Conference on Molecular Beam Epitaxy Providence, RI, October 1-3, 2001, 5-1. (2001)
  • S. D. Gunapala, S.V. Bandara, J.K. Liu, J.M. Mumolo, F.M. Reininger, J.M. Fastenau, and A.W.K. Liu

    "10- to 16-mm Broadband 640´512 GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array"

    2001 Intl. Conf. on Solid State Devices and Materials (SSDM), Tokyo, September 26-28, 2001, E-1-7, Proc. SPIE Vol. 4369, Infrared Technology and Applications XXVII, Eds. B.F. Andresen, G. F. Fulop, and M. Strojnik, (ISBN 0-8194-4064, SPIE, Washington), p.516. (2001)
  • J.M. Fastenau, W.K. Liu, X.M. Fang, D.I. Loubychev, R.I. Pelzel, T.R. Yurasits, T.R. Stewart, J.H. Lee, S.S. Li, and M.Z. Tidrow

    "Commercial Production of QWIP Wafers by Molecular Beam Epitaxy"

    Infrared Physics & Technology, 42, 407. (2001)
  • J.H. Lee, S.S. Li, M.Z. Tidrow and W.K. Liu

    "Investigation of Multi-color, Broadband Quantum Well Infrared Photodetectors with Digital Graded Superlattice Barrier and Linear- Graded Barrier for Long Wavelength Applications"

    Infrared Physics & Technology, 42, 123 (2001)
  • S. Bandara, S. Gunapala, S. Rafol, D. Ting, J. Liu, J. Mumolo, T. Trinh, A.W.K. Liu, and J.M. Fastenau

    "Quantum Well Infrared Photodetectors for Low Background Applications"

    Infrared Physics & Technology, 42, 237. (2001)
  • D. Lubvshev, W.K. Liu, T. R. Stewart, A.B. Cornfeld, X.-M. Fang, X. Xu, P. Specht, C. Kisielowski, M.S. Goorsky, J. Mirecki-Millunchick, C.S. Whelan, W.E. Hoke, P.F. Marsh, S.P. Svensson

    "Strain Relaxation and Dislocation Filtering in Metamorphic HEMT Structures Grown on GaAs Substrates"

    J. Vac. Sci. Technol. B, 19, 1510. (2001)
  • X.M. Fang, T. Yurasits, D. Loubychev, A.W.K. Liu, M. DeBruzzi, S. Priddy, and C. Schiprett

    "Improved Substrate Temperature Uniformity in a Commercial 4-inch Single-wafer MBE Reactor with a Dual-Zone Substrate Heater"

    J. Vac. Sci. Technol. B, 19, 1554. (2001)
  • L. Leung, D. Davison, A. Cornfeld, F. Towner, and D. Hartzell

    "Cost-effective, High-volume Molecular Beam Epitaxy Using a Multi 6-in Wafer Reactor"

    J. Cryst. Growth, 227-228, 143 (2001)
  • K.K. Choi, S.V. Bandara, S.D. Gunapala, W.K. Liu, and J.M. Fastenau

    "Detection Wavelength of InGaAs/AlGaAs Quantum Wells and Superlattices"

    6th International Conference on Intersubband Transitions in Quantum Wells, Asilomar, CA, September 10-14, M4.7. (2001)
  • O. Baklenov, A.B. Cornfeld, C. J. Doss, X.-M. Fang, J. M. Fastenau L. Leung, W.K. Liu, D. Lubyshev, Y. Luo, F.J. Towner, and Y. Wu

    "Commercial Production of 4-Inch InP HBTs Using Molecular Beam Epitaxy"

    13th American Conference on Crystal Growth and Epitaxy, Burlington, VT, August 12-16, 2001, 2B.3. (2001)
  • S.V. Bandara, S. D. Gunapala, J.K. Liu, S.B. Rafol, D.Z. Ting, J.M. Mumolo, F.M. Reininger, J.M. Fastenau, and A.W.K. Liu

    "Large-Format Broadband Multicolor GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Arrays"

    SPIE 46th Annual Meeting, International Symposium on Optical Science and Technology, San Diego, CA, July 29-August 3, 2001, 4454-06 (invited), Proc. SPIE Vol. 4454, Materials for Infrared Detectors, Ed. R. E. Longshore, (ISBN 0-8194-4168-6, SPIE, Washington, 2001), p.30. (2001)
  • W.K. Liu, D. Lubyshev, X.-M. Fang, and T. Yurasits

    "Metamorphic HBTs for New Wireless and Fiber-Optic Telecommunication Applications"

    Compound Semiconductor Manufacturing Expo, Boston, MA, July 9-11 1H.4. (2001)
  • D. Lubyshev, Y. Wu, X.-M. Fang, T. Yurasits, W.K. Liu, and A.B. Cornfeld

    "Heavily Doped InP-based HBTs for New Wireless and Fiber-optic Telecommunication Applications"

    2001 International Conference on GaAs Manufacturing Technology, Las Vegas, NV, May 21-24, 2001, 9B.01. (2001)
  • D. Lubyshev, Y. Wu, X.-M. Fang, T. Yurasits, W.K. Liu, A.B. Cornfeld, D. Mensa, S. Jaganathan, R. Pullela, M. Dahlström, P.K. Sundararajan, T. Mathew, and M. Rodwell

    "MBE Growth of Large Diameter Heavily Doped InP-based Lattice-matched and Metamorphic HBTs"

    13th International Conference on InP and Related Materials, Nara, Japan, May 14-18, 2001, WP-40 (2001)
  • S. Krishnan, M. Dahlström, T. Mathew, Y. Wei, D. Scott, M. Urteaga, M.J.W. Rodwell, W.K. Liu, D. Lubyshev, X.-M. Fang, and Y. Wu

    "InP/InGaAs/InP Double Heterojunction Bipolar Transistors with 300 GHz fmax"

    13th International Conference on InP and Related Materials, Nara, Japan, May 14-18, 2001, TuB1-2. (2001)
  • S. D. Gunapala, S.V. Bandara, J.K. Liu, J.M. Mumolo, F.M. Reininger, J.M. Fastenau, and A.W.K. Liu

    "10- to 16-mm Broadband 640´512 GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array"

    SPIE-AeroSense Conference, Orlando, FL, April 16-20, 2001, 4369-96. (2001)
  • S. Vijarnwannaluk, R. Zallen, W.K. Liu, M.L. Hsieh, and R.A. Stradling

    "Optical Studies of GaAs:C Grown at Low Temperatures by Molecular Beam Epitaxy

    American Physical Society March Meeting, Seattle, WA, March 12-16, 2001, C29.010. (2001)
  • I J Griffin, D Wolverson, J J Davies, M Emam-Ismail, J Heffernan, A H Kean, S W Bland and G Duggan

    "Band Structure Parameters of Quaternary Phosphide Semiconductor Alloys Investigated by Magneto-Optical Spectroscopy"

    "Band Structure Parameters of Quaternary Phosphide Semiconductor Alloys Investigated by Magneto-Optical Spectroscopy", Semicond. Sci. Technol. 15 (2000)
  • G M Lewis, J D Thomson, H D Summers P M Smowton, P Blood, G Jones and S Bland

    "Breakdown in Thermodynamic Balance Between Optical Gain and Spontaneous Emission in GaInP Quantum Well La"

    (2000)
  • S Cassette, S L Delage, E Chartier, D Floriot, M A Poisson, J C Garcia, C Grattepain, J Mimila Arroyo, R Plana and S W Bland

    "Hydrogen - Related Effects in GaInP / GaAs HBTs : Incorporation, Removal and Influence on Device Reliability"

    (2000)
  • M S Ravetz, L M Smith, S A Rushworth, A B Leese, R Kanjolia, J I Davies and R T Blunt

    "Properties of Solution TMI as an OMVPE Source"

    Journal of Electronic Materials, Vol. 29, No 1. (2000)
  • S A Rushworth, L M Smith, R T Blunt, J I Davies, S Hunjan and A Joel

    "Solution CBr4 : An Improved MOVPE Dopant Source"

    (2000)
  • I J Griffin, D Wolverson, J J Davies, M E Ismail, J Heffernan, S W Bland and G Duggan

    "Band Structure Parameters of Quaternary Phosphide Semiconductor Alloys Investigated by Magneto-Optical Spectroscopy"

    (2000)
  • M Hetterich, M D Dawson, A Yu Egorov, D Bernklau, H Riechert, S W Bland and J I Davies

    "Comparison of GaInNAs / GaAs and Strain-Compensated InGaAs / GaAsP Quantum Wells for 1200-1300 nm Diode Lasers"

    (2000)
  • W. Songprakob, R. Zallen, W.K. Liu, and K.L. Bacher

    "Infrared Studies of Hole-Plasmon Excitations in Heavily-doped p-type MBE-Grown GaAs:C"

    Phys. Rev. B, 62, 4501. (2000)
  • J.H. Lee, S.S. Li, M.Z. Tidrow, and W.K. Liu

    "High Sensitivity Broadband Quantum Well Infrared Photodetector with Double/Linear-Graded Barrier for 8-12mm Detection"

    Electronics Letts. 36, 1058. (2000)
  • W.K. Liu, D.I. Lubyshev, P. Specht, R. Zhao, E.R. Weber, A.J. SpringThorpe, R.W. Streater, S. Vijarnwannaluk, W. Songprakob, and R. Zallen

    "Properties of Carbon-doped Low-temperature GaAs and InP Grown by Solid-source MBE Using CBr4"

    J. Vac. Sci. Technol. B, 18, 1594 (2000)
  • S.J. Chung, N. Dai, G.A. Khodaparast, J.L. Hicks, K.J. Goldammer, F. Brown, W.K. Liu, R.E. Dozema, S.Q. Murphy, and M.B. Santos

    "Electronic Characterization of InSb Quantum Wells"

    Physica E, 7, 809 (2000)
  • K.K. Choi, C.J. Chen, K.L Bacher, and D.C. Tsui,

    "New Designs and Applications of Corrugated QWIPs"

    Physica E, 7, 112 (2000)
  • S.Q. Murphy, J.L. Hicks, W.K. Liu, S.J. Chung, K.J. Goldammer, and M.B. Santos

    "Studies of the Quantum Hall to Quantum Hall Insulator Transition in InSb Based 2DESs"

    Physica E, 6, 293. (2000)
  • X.M. Fang, T. Yurasits, D. Loubychev, A.W.K. Liu, M. DeBruzzi, S. Priddy, and C. Schiprett

    "Improved Substrate Temperature Uniformity in a Commercial 4-inch Single-wafer MBE Reactor with a Dual-Zone Substrate Heater"

    19th North American Conference on Molecular Beam Epitaxy, Tempe, AZ, October 15-18, P1.12. (2000)
  • D. Lubvshev, W.K. Liu, T. R. Stewart, A. B. Cornfeld, X.-M. Fang, X. Xu, P. Specht, C. Kisielowski, M. S. Goorsky, J. Mirecki-Millunchick, C. S. Whelan, W. E. Hoke, P. F. Marsh, S. P. Svensson

    "Strain Relaxation and Dislocation Filtering in Metamorphic HEMT Structures Grown on GaAs Substrates"

    19th North American Conference on Molecular Beam Epitaxy, Tempe, AZ, October 15-18, 8.2. (2000)
  • L. Leung, D. Davison, A. Cornfeld, F. Towner, and D. Hartzell

    "Cost-effective, High-volume Molecular Beam Epitaxy Using a Multi 6-in Wafer Reactor"

    11th International Conference on Molecular Beam Epitaxy, Beijing, China, September 11-15. (2000)
  • J Mimila-Arroyo and S W Bland

    "Acceptor Reactivation Kinetics in Heavily Carbon-Doped GaAs Epitaxial Layers"

    Applied Physics Letters, Volume 77, Number 8, 21 August. (2000)
  • J.M. Fastenau, W.K. Liu, X.M. Fang, D.I. Loubychev, R.I. Pelzel, T.R. Yurasits, T.R. Stewart, J.H. Lee, S.S. Li, and M. Z. Tidrow

    "Commercial Production of QWIP Wafers by Molecular Beam Epitaxy"

    QWIP 2000 Workshop, Dana Point, CA, July 27-29, A34. (2000)
  • J.H. Lee, S.S. Li, M.Z. Tidrow and W.K. Liu

    "Multi-color, Broadband Quantum Well Infrared Photodetectors with Digital Graded Superlattice Barrier and Linear- Graded Barrier for Long Wavelength Applications"

    QWIP 2000 Workshop, Dana Point, CA, July 27-29, A3. (2000)
  • K.R. Evans and S.P. Roth

    "Optical Sensing Opportunities in Production MBE"

    Digest of the 2000 IEEE/LEOS Summer Topical Meeting on Electronic-Enhanced Optics, Optical Sensing in Semiconductor Manufacturing, Electro-Optics in Space, Broadband Optical Networks, Aventura, FL, July 24-16, (ISBN 0769506453, IEEE, Piscataway, NJ, 2000), p. II29. (2000)
  • D Burns, M Hetterich, A I Ferguson, E Bente, M D Dawson, J I Davies and S W Bland

    "High Average Power (>20W) Nd:YVO4 Lasers Mode Locked by Strain Compensated Saturable Bragg Reflectors"

    Vol 17, No 6/June 2000/J Opt Soc Am B. (2000)
  • D.I. Lubyshev, W.K. Liu, T.R. Stewart, X.M. Fang, A.B. Cornfeld, W.E. Hoke, S.P. Svensson, and J.M. Millunchick

    "MBE Growth of High Quality Metamorphic HEMTs on GaAs"

    12th International Conference on InP and Related Materials, Williamsburg, VA, May 14-18, WP2.13. (2000)
  • D.I. Lubyshev, W.K. Liu, T.R. Stewart, and A.B. Cornfeld

    "A Comparative Study of As, Sb and P-based Metamorphic HEMTs"

    International Conference on GaAs Manufacturing Technology, Washington D.C., May 1-4, 6A.01. (2000)
  • G.A. Khodaparast, B.A. Mason, R.E. Doezema, S.J. Chung, K.J. Goldammer, W.K. Liu, and M.B. Santos

    "Electron spin resonance in InSb quantum wells"

    American Physical Society March Meeting, Minneapolis, MN, March 20-24, E28.007. (2000)
  • J.L Hicks, S.Q. Murphy, S.J. Chung, K.J. Goldammer, W.K. Liu, and M.B. Santos

    "Breakdown of the IQHE in InSb/InAlSb Quantum Wells"

    American Physical Society March Meeting, Minneapolis, MN, March 20-24, A17.006. (2000)
  • G Jones, N Cain, D W Peggs, R P Petrie, S W Bland and D J Mowbray

    "An Optical Study of the Properties of (AlxGa1-x)0.51In0.49P Epitaxial Layers with Varying Composition, Hydrostatic Pressure and GaAs Substrate Orientation"

    Materials Science and Engineering B66 126-130. (1999)
  • P. Specht, R.C. Lutz, R. Zhao, E.R. Weber, W.K. Liu, K. Bacher, F.J. Towner, T.R. Stewart, and M. Luysberg

    "Improvement of Molecular Beam Epitaxy-grown Low-temperature GaAs through p Doping with Be and C"

    J. Vac. Sci. Technol. B, 17(3), 1200. (1999)
  • K.J. Goldammer, S.J. Chung, W.K. Liu, M.B. Santos, J.L. Hicks, S. Raymond, and S.Q. Murphy

    "High-mobility Electron Systems in Remotely-doped InSb Quantum Wells"

    J. Cryst. Growth, 201/202, 753 (1999)
  • W.K. Liu, K. Bacher, F.J. Towner, T.R. Stewart, C. Reed, P. Specht, R.C. Lutz, R. Zhao, and E.R. Weber

    "Properties of C-doped LT-GaAs Grown by MBE Using CBr4"

    J. Cryst. Growth, 201/202, 217. (1999)
  • J.-H. Lee, S.S. Li, M.Z. Tidrow, W.K. Liu, and K. Bacher

    "Quantum Well Infrared Photodetectors with Digital Graded Superlattice Barrier for Long Wavelength and Broadband Detection"

    Appl. Phys. Lett. 75, 3207. (1999)
  • M.Z. Tidrow, X.D. Jiang, S.S. Li, J. Moon, and W.K. Liu

    "Very-Long-Wavelength Quantum Well Infrared Photodetectors"

    196th Meeting of the Electrochemical Society, Honolulu, HI, Oct. 17-22, U1-1884, Proc. International Symposium on Advanced Luminescent Materials and Quantum Confinement, Vol. 99-22, p. 447. (1999)
  • J.-H. Lee, S.S. Li, M.Z. Tidrow, W.K. Liu, and K. Bacher

    "A Novel Quantum Well Infrared Photodetector with Digital Graded Superlattice Barrier for Long Wavelength and Broadband Detection"

    196th Electrochemical Soc. Meeting, Honolulu, HI, Oct. 17-22, 1999, Proc. International Symposium on Advanced Luminescent Materials and Quantum Confinement, Vol. 99-22, p. 436. (1999)
  • W.K. Liu, P. Specht, D.I. Lubyshev, A.J. SpringThorpe, R.W. Streater, R. Zhao, N.D. Jäger, S. Vijarnwannaluk, W. Songprakob, R. Zallen, and E.R. Weber

    "Properties of Carbon-doped Low-temperature GaAs and InP Grown by Solid-source MBE Using CBr4"

    18th North American Conference on Molecular Beam Epitaxy, Banff, Canada, Oct. 10-13, P2.14. (1999)
  • R.K. Ahrenkiel, R. Ellingson, D.I. Lubyshev, and W.K. Liu

    "Recombination Lifetimes in Heavily Carbon Doped GaAs Double Heterostructures"

    European GaAs and Related III-V Compounds Application Symposium, Munich, Germany, Oct. 4-8. (1999)
  • N.D. Jäger, P. Specht, W.K. Liu, F. Morier-Genoud, M. Salmeron, and E. R. Weber

    "Cross-sectional Scanning Tunneling Microscopy Studies of Low-temperature Grown GaAs"

    20th International Conference on Defects in Semiconductors, Berkeley, CA, July 26-30, ThP.45. (1999)
  • M.Z. Tidrow, X.D. Jiang, S.S. Li, J. Moon, W.K. Liu, and K. Bacher

    "Very-Long-Wavelength Quantum Well Infrared Photodetectors"

    8th Annual AIAA/BMDO Technology Conference, MIT Lincoln Laboratory, Lexington, MA, July 19-22, 08-03. (1999)
  • S.J. Chung, N. Dai, J. Hicks, K.J. Goldammer, F. Brown, W.K. Liu, R.E. Doezema, S.Q. Murphy, and M.B. Santos

    "Electronic Characterization of InSb Quantum Wells"

    9th International Conference on Modulated Semiconductor Structures, Fukuoka, Japan, July 12-16, D07. (1999)
  • R. Zallen, W. Songprakob, S. Vijarnwannaluk, M.L. Hsieh, R.A. Stradling, W.K. Liu, and K.L. Bacher

    "Infrared Participation of the Split-off Valence Band in the Raman and Photoluminescence Spectra of MBE GaAs:C"

    American Physical Society Centennial Meeting, Atlanta, GA, March 20-26, WC15.03. (1999)
  • W. Songprakob, S. Vijarnwannaluk, R. Zallen, W.K. Liu, and K.L. Bacher

    "Infrared Studies of Hole-plasmon Excitations in Heavily-doped p-type MBE-grown GaAs:C",

    American Physical Society Centennial Meeting, Atlanta, GA, March 20-26, WC15.02. (1999)
  • S. Vijarnwannaluk, W. Songprakob, R. Zallen, W.K. Liu, and K.L. Bacher

    "Local-mode Infrared Absorption in Heavily-doped p-type MBE-grown GaAs:C"

    American Physical Society Centennial Meeting, Atlanta, GA, March 20-26, WC15.01. (1999)
  • D. Hartzell, L.K. Leung, and F.J. Towner

    "Cost-effective, High-volume Molecular Beam Epitaxy"

    JOM, 50, 37. (1998)
  • W.K. Liu, K.J. Goldammer and M.B. Santos

    "Surface Segregation and Compensation of Si in d-doped InSb and AlxIn1-xSb Grown by Molecular Beam Epitaxy"

    J. Appl. Phys. 84, 205. (1998)
  • X.M. Fang, I-N. Chao, B.N. Strecker, P.J. McCann, S. Yuan, W.K. Liu, and M.B. Santos

    "MBE Growth of Bi2Se3- and Tl2Se-doped PbSe and PbEuSe on CaF2/Si(111)"

    J. Vac. Sci. Technol. B, 16, 1459. (1998)
  • K.J. Goldammer, W.K. Liu, G.A. Khodaparast, S.C. Lindstrom, M.B. Johnson, R.E. Doezema, and M.B. Santos

    "Electrical Properties of InSb Quantum Wells Remotely Doped with Si"

    J. Vac. Sci. Technol. B, 16, 1367. (1998)
  • P. Specht, W.K. Liu, K. Bacher, R.C. Lutz, R. Zhao, M. Luysberg, F.J. Towner, T.R. Stewart, and E.R. Weber

    "Improvement of MBE-grown LT-GaAs through p-doping with Be and C"

    17th North American Conference on Molecular Beam Epitaxy, College Station, PA, October 24-26, P.10. (1998)
  • M. Tidrow, X. Jiang, S. Li, and K. Bacher

    "A Novel Four-Color Quantum Well Infrared Photodetector"

    194th Meeting of the Electrochemical Society and 6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Boston, MA, November 1-6, N4-614. (1998)
  • K.K. Choi, K.L. Bacher, and Y. Wu

    "Corrugated QWIP with Dielectric Coverage for Focal Plane Array Applications"

    194th Meeting of the Electrochemical Society and 6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Boston, MA, November 1-6, N4-610. (1998)
  • A.W. Hanson, D. Danzilio, K. Bacher, and L. Leung

    "A Selective Gate Recess Process Utilizing MBE-grown In0.5Ga0.5P Etch-stop Layers for GaAs-based FET Technologies"

    20th Annual IEEE GaAs IC Symposium, Atlanta, GA, November 1-4, J.3. (1998)
  • P. Specht, R.C. Lutz, R. Zhao, M.J. Cich, O.H. Lam, E.R. Weber, W.K. Liu, K. Bacher, F.J. Towner, T.R. Stewart, and M. Luysberg

    "Growth and Characterization of p-doped LT-GaAs"

    Symposium on Non-stoichiometric III-V Compounds, Erlangen, Germany, October 5-7. (1998)
  • A.W.K. Liu, K. Bacher, E.R. Weber, P. Specht, F.J. Towner, and T.R. Stewart

    "Properties of C-Doped LT-GaAs Grown by MBE Using CBr4"

    10th International Conference on Molecular Beam Epitaxy, Cannes, France, August 31-September 4, PT5.20. (1998)
  • K.J. Goldammer, S. J. Chung, W.K. Liu, and M.B. Santos

    "High-mobility Electron Systems in Remotely-doped InSb Quantum Wells"

    10th International Conference on Molecular Beam Epitaxy, Cannes, France, August 31-September 4, PT5.9. (1998)
  • K.J. Goldammer, N. Dai, J. Hicks, S.J. Chung, F. Brown, S. Raymond, W.K. Liu, R.E. Doezema, J.E. Furneaux, S.Q. Murphy, and M.B. Santos

    "Two-Dimensional Electron Systems in InSb Quantum Wells"

    11th Conference on Superlattice, Microstructures and Microdevices (Satellite Conference of the 24th International Conference on Physics of Semiconductors), Hurgada, Egypt, July 27-August 1. (1998)
  • W.K. Liu, K. Bacher, F.J. Towner, and T.R. Stewart

    "MBE Growth and Characterization of C-doped LT-GaAs"

    40th Electronic Materials Conference, Charlottesville, VA, June 24-26, A6. (1998)
  • K. Bacher, W.K. Liu, Y. Wu, M. Micovic, D. Lubyshev, D.L. Miller, Y. Yun, J. Atherton, J. Chi, P. Ersland, M. Fukuda, A. Hansen, K. Lu, M. O'Keefe, P. Staecher, and X. Zhang

    "Molecular Beam Epitaxy Grown Carbon-Doped Heterojunction Bipolar Transistors"

    International Conference on GaAs Manufacturing Technology, Seattle, WA, April 27-30. (1998)
  • M.B. Johnson, S.C. Lindstrom, K.J. Goldammer, W.K. Liu, and M.B. Santos

    "Atomic Force Microscopy Used to Improve the Mobility of InSb-based Quantum Wells"

    American Physical Society Meeting, Los Angeles, CA, March 16-22, X27.08. (1998)
  • K.J. Goldammer, W.K. Liu, G.A. Khodaparast, F.W. McKenna, and M.B. Santos

    "High-Mobility InSb Quantum Wells Remotely-Doped with Si"

    American Physical Society Meeting, Los Angeles, CA, March 16-22, X27.09. (1998)
  • W.K. Liu, K.J. Goldammer, and M.B. Santos

    "Surface Segregation and Dopant Compensation in Si d-doped InSb and AlxIn1-xSb Grown by Molecular Beam Epitaxy"

    American Physical Society Meeting, Los Angeles, CA, March 16-22, Q23.06. (1998)
  • S.Q. Murphy, S. Raymond, J.L. Hicks, J.E. Furneaux, K.J. Goldammer, W.K. Liu, M.B. Santos, and E. Watters

    "Hopping Conductivity in InSb based 2D Electronic Systems at High Magnetic Fields"

    American Physical Society Meeting, Los Angeles, CA, March 16-22, G33.12. (1998)
  • K. Bacher, W.K. Liu, Y. Wu, and T. Stewart

    "Strain-compensated InGaAs/AlGaAsP Quantum Well Intersubband photodetectors for Mid-IR Wavelength"

    Photonics West International Symposium on Optoelectronics '98: Integrated Devices and Applications, San Jose, CA, January 24-30, 1998, S3, Proc. SPIE Vol. 3287, Photodetectors: Materials and Devices III, Ed. G.J. Brown, (SPIE, Washington) p.80. (1998)