Publications

Publications

  • G N. Mukherjee, J. Boardman, B. Chu-Kung, G. Dewey, A. Eisenbach, J. Fastenau, J. Kavalieros, W.K. Liu, D. Lubyshev, M. Metz, K. Millard, M. Radosavljevic, T. Stewart, H.W. Then, P. Tolchinsky, and R. Chau

    “MOVPE III-V Material Growth on Silicon Substrates and its Comparison to MBE for Future High Performance and Low Power Logic Applications”

    IEEE International Electron Device Meeting (IEDM), Washington, DC, Dec 5-7 (35.1, invited). (2011)
  • G. Dewey, B. Chu-Kung, J. Boardman, J.M. Fastenau, J. Kavalieros, W.K. Liu, D. Lubyshev, M. Metz, N. Mukherjee, P. Oakey, R. Pillarisetty, M. Radosavljevic, H.W. Then, and R. Chau

    “Fabrication, Characterization, and Physics of III-V Heterojunction Tunneling Field Effect Transistors (H-TFET) for Steep Sub-Threshold Swing”

    IEEE International Electron Device Meeting (IEDM), Washington, DC, Dec 5-7 (33.6). (2011)
  • M. Radosavljevic, G. Dewey, D. Basu, J. Boardman, B. Chu-Kung, J.M. Fastenau, S. Kabehie, J. Kavalieros, V. Le, W.K. Liu, D. Lubyshev, M. Metz, K. Millard, N. Mukherjee, L. Pan, R. Pillarisetty, W. Rachmady, U. Shah, H.W. Then and R. Chau

    “Electrostatics Improvement in 3-D Tri-gate Over Ultra-Thin Body Planar InGaAs Quantum Well Field Effect Transistors with High-K Gate Dielectric and Scaled Gate-to-Drain/Gate-to-Source Separation”

    IEEE International Electron Device Meeting (IEDM), Washington, DC, Dec 5-7 (33.1). (2011)
  • D. K. Mohata, R. Bijesh , S. Mujumdar, C. Eaton, R.E. Herbert, T. Mayer, V. Narayanan, J. Fastenau, D. Loubychev, A. Liu and S. Datta

    “Demonstration of MOSFET-Like On-Current Performance in Arsenide/Antimonide Tunnel FETs with Staggered Hetero-junctions for 300mV Logic Applications”

    IEEE International Electron Device Meeting (IEDM), Washington, DC, Dec 5-7 (33.5). (2011)
  • W.K. Liu, D. Lubyshev, Y. Qiu, and J.M. Fastenau

    “Production MBE growth of Sb-based 6.1A materials on GaSb and InAs substrates”

    International Workshop on 6.1 Å II-VI and III-V Materials and Their Integration, Arizona State University, Tempe, AZ, Nov 8-9 (invited). (2011)
  • V. Jain, J.C. Rode, H.-W. Chiang, A. Baraskar, E. Lobisser, B. J. Thibeault, M.J.W. Rodwell, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J. M. Fastenau, and W.K. Liu

    “1.0 THz fmax InP DHBTs in a Refractory Emitter and Self-aligned Base Process for Reduced Base Access Resistance”

    69th Device Research Conference, University of California, Santa Barbara, CA, June 22-24, VII.B. (2011)
  • D. Wang, D. Donetsky, S. Svensson, S. Suchalkin, G. Belenky, W.K. Liu, J. Fastenau, D. Lubyshev

    “Study of Minority Carrier Lifetime and Background Carrier Concentration in GaSb-InAs Strained-Layer Superlattices and Bulk Epitaxial Layers by Optical Modulation Response”

    53rd Electronic Materials Conference, University of California, Santa Barbara, CA, June 22-24, R3. (2011)
  • V. Jain, E. Lobisser, A. Baraskar, B.J. Thibeault, M.J.W. Rodwell, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J.M. Fastenau, and W.K. Liu

    “InGaAs/InP DHBTs Demonstrating Simultaneous fτ/fmax ~ 460/850 GHz in a Refractory Emitter Process”

    23rd InP and Related Materials Conference, Berlin, Germany, May 22–26. (2011)
  • V. Jain, E. Lobisser, A. Baraskar, B.J. Thibeault, M.J.W. Rodwell, D. Loubychev, A. Snyder, Y. Wu, J.M. Fastenau, and W.K. Liu

    “InGaAs/InP DHBTs in a Planarized, Etch-back Technology for Base Contacts”

    38rd International Symposium on Compound Semiconductors, Berlin, Germany, May 22–26, Th-2B. (2011)
  • G. Belenky, S. Svensson, D. Donetsky, S. Suchalkin, D.Wang, D. Westerfeld, W. K. Liu, J. Fastenau, D. Lubyshev

    “Effects of the Phonon Energy and Carrier Concentration on the Carrier Lifetime in LWIR and MWIR Type-2 SLS and MCT Materials for IR Photodetector Technology”

    SPIE Defense, Security, and Sensing 2011, Orlando, FL, Apr 25 – 29, 8012-28. (2011)
  • T.E. Kazior, J.R. LaRoche, W. Hoke, E.A. Fitzgerald, M. Bulsara, M. Urteaga, J. Bergman, M.-J. Choe, K.-J. Lee, M. Seo, T. Seong, A. Yen, D. Lubyshev, J. M. Fastenau, and A.W.K. Liu

    "Integration of III-V Transistors and Si CMOS on Silicon Substrates: A Path to Adaptable, Reconfigurable, High Performance Integrated Circuits"

    36th Annual GOMACTech Conference, Orlando FL, Mar 21-24 (2.4). (2011)
  • V. Jain, E. Lobisser, A. Baraskar, B.J. Thibeault, M.J.W. Rodwell, Z. Griffith, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J.M. Fastenau, and W.K. Liu

    "InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous fτ/fmax ~ 430/800 GHz"

    IEEE Electron Dev. Letts. 32, 24 (2011)
  • D. Mohata, S. Mookerjea, A. Agrawal, Y. Li, T. Mayer, V. Narayanan, A. Liu, D. Loubychev, J. Fastenau, and S. Datta

    “Experimental Staggered-Source and N+ Pocket-Doped Channel III–V Tunnel Field-Effect Transistors and Their Scalabilities”

    Appl. Phys. Express 4, 024105. (2011)
  • Z. Tian, R.Q. Yang, D. Lubyshev, Y. Qiu, J.M. Fastenau, W.K. Liu, J.F. Klem, and M.B. Johnson

    “Development of Interband Cascade Infrared Photodetectors”

    Proc. SPIE Vol. 8012, Infrared Technology and Applications XXXVII, Eds. B.F. Andresen, G.F. Fulop, and P.R. Norton, (ISBN 9780819485861, SPIE, Bellingham, WA 2011), 80122U. (2011)
  • E.H. Steenbergen, B.C. Connelly, G.D. Metcalfe, H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J.M. Fastenau, A.W.K. Liu, S. Elhamri, O.O. Cellek, and Y. -H. Zhang

    “Significantly Improved Minority Carrier Lifetime Observed in a Long-Wavelength Infrared III-V Type-II Superlattice Comprised of InAs/InAsSb”

    Appl. Phys. Letts. 99, 251110. (2011)