Publications

Publications

  • M. Radosavljevic, B. Chu-Kung, S. Corcoran, G. Dewey, M. K. Hudait, J. M. Fastenau*, J. Kavalieros, W. K. Liu*, D. Lubyshev*, M. Metz, K. Millard, N. Mukherjee, W. Rachmady, U. Shah, and Robert Chau

    "Advanced High-K Gate Dielectric for High-Performance Short-Channel In0.7Ga0.3As Quantum Well Field Effect Transistors on Silicon Substrate for Low Power Logic Applications"

    2009 International Electron Devices Meeting (IEDM), Baltimore, MD, December 7-9. (2009)
  • Y.Q. Wu*, M. Xu, R. Wang, O. Koybasi, and P.D. Ye

    “Experimental Demonstration of 100nm Channel Length In0.53Ga0.47As-based Vertical Inter-band Tunnel Field Effect Transistors (TFETs) for Ultra Low-Power Logic and SRAM Applications”

    2009 International Electron Devices Meeting (IEDM), Baltimore, MD, December 7-9. (2009)
  • Y.Q. Wu*, M. Xu, R. Wang, O. Koybasi, and P.D. Ye

    “High-performance Deep-submicron Inversion-mode InGaAs MOSFETs with Maximum Gm exceeding 1.1 mS/µm: New HBr Pretreatment and Channel Engineering,”

    2009 International Electron Devices Meeting (IEDM), Baltimore, MD, December 7 9. (2009)
  • Y.Q. Wu*, R. Wang, T. Shen, J.J. Gu, and P.D. Ye

    “First Experimental Demonstration of 100 nm Inversion-mode InGaAs FinFET through Damage-free Sidewall Etching,”

    2009 International Electron Devices Meeting (IEDM), Baltimore, MD, December 7-9 (2009)