In the news: IQE GaSb detectors on silicon
03 June 2019
IQE’s work on gallium antimonide infrared photodetectors grown directly on silicon, presented at the 2018 NAMBE conference has been widely picked up by a number of trade journals.
The work was selected as the featured article on the American Institute of Physics (AIP) website and has now been featured as an AIP SciLight article:
The article was also selected by the American Vacuum Society (AVS) and AIP journal editors as one to be highlighted in AVS' membership newsletter.