SMARTCymru Project Awarded to the Compound Semiconductor Centre for Vertical Gallium Nitride Device Development
21 January 2019
Cardiff, UK, January 21 2019: The Compound Semiconductor Centre, IQE’s joint venture with Cardiff University, has announced the award of Welsh Government project support through the SMARTCymru (SMART Wales) programme via the European Regional Development Fund (ERDF). This funding will support a technical and commercial feasibility study for a project to develop a UK capability for the manufacture of Vertical Gallium Nitride devices.
Power electronic devices based on Gallium Nitride (GaN) significantly reduce the losses in power conversion circuits making the technology an exciting candidate for next-generation power electronics in applications such as electric or hybrid vehicles, data centers, high-power and high-frequency communications.
Please visit the CSC website to find more information about the project: http://www.compoundsemiconductorcentre.com/smartcymru-project-awarded-to-the-compound-semiconductor-centre-for-vertical-gallium-nitride-device-development