IQE announces industry’s first 150mm indium antimonide (InSb)

03 February 2014

Cardiff, UK, 3 February 2014: IQE plc (AIM: IQE), the leading global supplier of advanced semiconductor wafer products and services to the semiconductor industry, this week presents a series of invited papers on recent key developments in advanced photonic technologies at the world’s premier optoelectronics event, Photonics West.

One of the papers announces an industry first; the commercial growth and characterization of 6” diameter InSb substrates that are suitable for use in the fabrication of MWIR focal plane infrared detectors:

Growth and characterization of 6" InSb substrates for use in large area infrared imaging applications

In addition to the 150mm InSb announcement, IQE will establish a strong presence at Photonics West with the presentation of a further two invited papers by the Group’s infrared division:

GaSb-based photodetectors covering short-wave to long-wave IR grown by molecular beam epitaxy

Molecular beam epitaxial (MBE) growth of GaSb-based photodetector structures spanning the short-wave to long wave IR spectral range. Barrier-type nBn detectors, grown on 4-inch GaSb or 6-inch GaAs.

Multi-wafer growth of GaInAs photodetectors on 4" InP by MOCVD for SWIR imaging applications

Growth of InP/GaInAs photodetectors on 4” InP by MOCVD.

Photonics West runs from 3 to 6 February at the Moscone Convention Center in San Francisco and is expected to attract around 1,200 exhibitors and 19,000 visitors. For more information, visit


Technical/Sales: IQE Inc (+1 610 972 1488)
Amy Liu

Technical/Sales: IQE Infrared (+44 19 0821 0444)
Mark Furlong

Press: IQE plc (+44 29 2083 9400)
Chris Meadows