IEDM 2009 Conference: IQE and Intel presented joint paper on the development of InGaAs on Si devices with high-K gate dielectrics for Low Power Logic Applications.
09 December 2009
IQE and Intel Corporation presented a joint paper on the development of InGaAs on Si devices with high-K gate dielectrics for low power logic applications. The paper was presented by Dr. Marko Radosavljevic of Intel Corporation at the International Electron Devices Meeting (IEDM) held in Baltimore, MD from 7th to 9th December 2009. The paper presented the results of work carried out by scientists at Intel’s Technology and Manufacturing Group in Oregon and IQE’s epitaxial growth facility in Bethlehem, Pennsylvania.
The ever increasing performance requirements of modern-day microprocessors has for decades been achieved by the continuous scaling of Si CMOS devices, but this enhanced performance is at the cost of increased power consumption. In recent years, scientists have been looking towards materials based solutions to ensure that technology can keep up with the demands of following Moore’s Law.
Compound semiconductor-based Quantum Well Field Effect Transistor (QWFET) provide the potential for achieving high performance and low power consumption in future generation microprocessor applications, and the integration with Si transistors on a single chip provides the optimal solution.
The paper, entitled: “Advanced High-K Gate Dielectric for High-Performance Short-Channel In0.7Ga0.3As Quantum Well Field Effect Transistors on Silicon Substrate for Low Power Logic Applications,” relates to the development of novel technology for producing leading edge transistor devices for future generation high-speed, ultra-low power digital logic applications.
IQE’s facility in Bethlehem, PA, produced the blanket InGaAs QWFET epiwafers grown on Si substrates using molecular beam epitaxy (MBE). Intel Corporation used the blanket epiwafers for their transistor design and fabrication.
Steve Gergar, General Manager of IQE’s Pennsylvania operation commented:
“IQE has played a key role in the development of epitaxial materials upon which Intel has fabricated devices which demonstrate improved device characteristics and significantly higher transistor drive performance whilst maintaining low power consumption.
“The results of this work demonstrate IQE’s strength in advanced epitaxial material engineering built on many years of experience with III-V materials from research and development through to high-volume production. Based on this successful research to-date, IQE looks forward to continued work with Intel in the area of III-V on Si integration for future generation high performance digital applications.”
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