Capabilities
Click HERE to view our current brochure
Click HERE to view our July 2009 Presentation from Semicon West outlining our services and capabilities
New additions to our epitaxy services portfolio
Germanium on Insulator
IQE's new engineered GeOI substrates offer extremely high crystal quality and are available now, allowing device designers to look beyond the performance constraints imposed by existing silicon technologies.
- Exceptionally high crystalline quality
- Significantly improved carrier mobilities
- Roughness <10Å
- Ge thickness up to 200Å, coverage ~95%, thickness uniformity ±4% across 150mm wafer
- Metals (determined by VPD) <5e10cm-2
Development kits available in 100mm and 150mm wafer sizes
(200mm available later in 2009)
Germanium On Silicon
IQE offers two types of Germanium on Silicon:
- a layer of germanium deposited straight onto a silicon substrate.
- a more advanced offering whereby we deposit a buffer SiGe
layer between a layer of silicon and a layer of germanium,
thus reducing the number of defects we introduce in the
layers.
Both of these materials have applications in the solar
industry.
Selective Epitaxy
IQE offers three kinds of selective epitaxy processes:
Selective Silicon offers the advantage of offering optical waveguide and the best available electrical isolation properties which is used in many applications combining optical and electrical performance.
Selective Silicon Germanium is predominantly used for Raised Source Drain applications to prevent metal spiking on thin MOS devices.
Selective Germanium is a new technology once again being used in a combination of electrical and optical applications.
IQE has significant experience in working in all these
technologies and produces material of the highest quality
for its customers having developed advanced in-house
processing techniques.