IQE - The latest research and developments at IQE

Research and Development

IQE has many exciting development activities in place to ensure continuing support of our growing customer base and the increasing range of commercially important semiconductor devices. Supporting the most diverse product portfolio in the industry, IQE's development efforts activities include internally-funded, government-funded, customer-funded and third-party co-funded efforts, and are associated with next generation applications as well as process improvements leading to greater throughput, higher-quality products, better manufacturing yield, increased production uptime and new product development.

Many R&D activities, particularly those that are funded or co-funded by customers are subject to strictly controlled confidentiality procedures within IQE. When it is appropriate to announce the outcome of such activities, details may be found within the NEWS section of this site. To be automatically updated when announcements are made, please register with the NEWS ALERT SERVICE at our investor relations site.

IQE continues to play a significant role in advancing the field of materials technology as the following list of recent publications demonstrates:

2006

H.S. Djie, D.-N. Wang, B.S. Ooi, J.C.M. Hwang, X.-M. Fang, Y. Wu, J.M. Fastenau, and W.K. Liu, “Intermixing of InGaAs Quantum-dots Grown by Cycled Monolayer Deposition”, J. Appl. Phys. 100, 033527, (2006).

N. Parthasarathy, Z. Griffith, C. Kadow, U. Singisetti, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A.W.K. Liu, “Collector-Pedestal InGaAs/InP DHBTs Fabricated in a Single-Growth, Triple-Implant Process”, IEEE Electron Device Letts. 27, 313 (2006).

E. Lind, Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A.W.K. Liu, “250 nm InGaAs/InP DHBTs w/ 650 GHz fmax and 420 GHz ft, Operating Above 30 mW/mm2”, 64th Device Research Conference, Penn State University, PA, June 26-28, 2006.

Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A.W.K. Liu, “In0.53G0.47aAs/InP DHBTs with a 75 nm Collector, 20 nm Base Demonstrating 544 GHz ft, BVCEO = 3.1 V, and BVCBO = 3.4 V”, 18th International Conference on InP and Related Materials, Princeton, NJ, May 8-11, 2006, MB-2.5.

R T Blunt, "White Light Interferometry – A production worthy technique for measuring surface roughness on semiconductor wafers". 2006 Int. Conf. on Compound Semiconductor Manufacturing Technology, Vancouver BC, Canada, April 24 – 27, 2006

R T Blunt, "Interferometry speeds surface roughness analysis". Compound Semiconductor, June 2006 12(5) 18 – 21 (2006)

2005

Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu, “InGaAs/InP DHBTs with 120 nm collector having simultaneously high ft ,fmax > 450 GHz”, IEEE Electron Device Letts. 26, 530 (2005).

S.V. Bandara, S.D. Gunapala, J.K. Liu, S.B. Rafol, C.J. Hill, D.Z.Y. Ting, J.M. Mumolo, T.Q. Trinh, J.M. Fastenau, and A.W.K. Liu, “Tuning and Tailoring of Broadband Quantum-well Infrared Photodetector Responsivity Spectrum”, Appl. Phys. Letts. 86, 151104 (2005).

Z. Griffith, M. Dahlström, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu, “InGaAs/InP DHBTs for Increased Digital IC Bandwidth having a 391 GHz ft and 505 GHz fmax”, IEEE Electron Device Letts. 26, 11 (2005).

J.M. Fastenau, D.I. Lubyshev, Y. Wu, C. Doss, and W.K. Liu, “Comparative Studies of the Epi-Readiness of 4” InP Substrates for MBE Growth”, J. Vac. Sci. Technol. B, 23, (2005).

J.M. Fastenau, W.K. Liu, D. Lubyshev, X.-M. Fang, Y. Wu, and C. Doss, “Evaluation of 4” InP Substrates for Epi-Ready Production MBE Growth”, International Conference on Compound Semiconductor Manufacturing Technology, New Orleans, LA, April 11-14, 2005, 4.5.

Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu, “InGaAs/InP DHBTs with 120 nm collector having simultaneously high ft, fmax > 450 GHz”, IEEE Electron Device Letts. (2005).

W.K. Liu, J.M. Fastenau, D. Lubyshev, X.-M. Fang, Y. Wu, and C. Doss, “InP Substrate Evaluation for Epi‑Ready MBE Growth”, 17th International Conference on InP and Related Materials, Glasgow, Scotland, UK, May 8-12, 2005, TP-15.

Z. Griffith, M. Dahlström, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A.W.K. Liu, “In0.53G0.47aAs/InP Type-I DHBTs with 100 nm Collector and 491 GHz ft, 415 GHz fmax”, 17th International Conference on InP and Related Materials, Glasgow, Scotland, UK, May 8-12, 2005, TuA-2.4.

Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A. Liu, “InGaAs/InP Type-I DHBTs Having 450 GHz ft and 490 GHz fmax with Ccb/Ic 0.38 ps/V”, 63rd Device Research Conference, Santa Barbara, CA, June 20-22, 2005, VII.B-7.

H. S. Djie, D.-N. Wang, J. C. M. Hwang and B. S. Ooi, X.-M. Fang, Y. Wu, J. M. Fastenau, and W. K. Liu, “Emission wavelength trimming of self-assembled InGaAs/GaAs Quantum Dots with GaAs/AlGaAs superlattices by rapid thermal annealing”, Symp. J: III-V Semiconductors for Microelectronic and Optoelectronic Applications, 3rd Intl. Conf. on Materials for Advanced Technologies (ICMAT) and 9th Intl. Conf. on Advanced Materials (IUMRS-ICAM), Singapore, July 3-8, 2005, J-3-OR5.

L. Blunt, J. Armstrong, & R. Blunt, "The use of advanced 3D surface metrology for the characterisation of epi-wafers and Si structures". Phys. Stat. Sol., C 2, No 4, 1251-1258 (2005)

2004

Z. Griffith, M. Dahlström, M. Urteaga, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu, “InGaAs/InP Mesa DHBTs with Simultaneously High ft and fmax and Ccb/Ic Ratio”, IEEE Electron Device Letts. 25, 250 (2004).

D.I. Lubyshev, J.M. Fastenau, X.-M. Fang, Y. Wu, C. Doss, A. Snyder, W.K. Liu, M.S.M. Lamb, S. Bals, and C. Song, “Comparison of As- and P-based Metamorphic buffers for High Performance InP Heterojunction Bipolar Transistor and High Electron Mobility Transistor Applications”, J. Vac. Sci. Technol. B, 22 1565 (2004).

J.M. Fastenau, D.I. Lubyshev, X.-M. Fang, C. Doss, Y. Wu, W.K. Liu, S. Bals, Z. Griffith, Y.-M. Kim, and M.J.W. Rodwell, “Strain Relaxation and Dislocation Filtering in Metamorphic HBT and HEMT structures Grown on GaAs Substrates by MBE”, 16th International Conference on InP and Related Materials, Kagoshima, Japan, May 31-June 4, 2004, WP-8.

W.K. Liu, D.I. Lubyshev, J.M. Fastenau, Y. Wu, and C. Doss, “Comparative Studies of the Epi-Readiness of 4” InP Substrtaes for MBE Growth”, 22nd North American Conference on Molecular Beam Epitaxy, Banff, Canada, Oct. 10–14, 2004, P23.

D.I. Lubyshev, J.M. Fastenau, X.-M. Fang, Y. Wu, C. Doss, A. Snyder, W.K. Liu, M.S.M. Lamb, S. Bals, and C. Song, “Comparison of As- and P-based Metamorphic buffers for High Performance InP Heterojunction Bipolar Transistor and High Electron Mobility Transistor Applications”, J. Vac. Sci. Technol. B, 22, 1565 (2004).

M.E. Murtagh, V. Guenebaut, S.Ward, D. Nee, P.V. Kelly, B. O’Looney, F. Murphy, V. Modreanu, S. Westwater, R. Blunt, & S.W. Bland, "Photoreflectance spectroscopy study of vertical cavity surface emitting laser structures". Thin Solid Films 450 148 – 140 (2004)

Martin Murtagh, Pat Kelly, and Roy Blunt, "Photoreflectance technique reduces need for destructive testing of VCSEL epiwafers". Compound Semiconductor, March 2004, 31 - 34

J. Armstrong & R. Blunt, "White light interferometry for routine surface roughness measurement in a production environment". EXMATEC 2004, Montpellier, France June 2004

2003

S.D. Gunapala, S.V. Bandara, J.K. Liu, S.B. Rafol, C.A. Shott, R.W. Jones, S. Laband, J.T. Woolaway II, J.M. Fastenau, A.W.K. Liu, M.D. Jhabvala, and K.K. Choi, “640×512 Pixel Four-Band, Broadband, and Narrowband Quantum Well Infrared Photodetector Focal Plane Arrays”, Proc. SPIE Vol. 4820, Infrared Technology and Applications XXVIII, Eds. B. Andresen, G.F. Fulop, and M. Strojnik (ISBN 0-8194-4588-6, SPIE, Washington, 2003), p. 306.

O. Malis, W.K. Liu, C. Gmachl, J.M. Fastenau, A. Joel, P. Gong, S.W. Bland, and N. Moshegov, “MBE Development of Dilute Nitrides for Commercial Long-wavelength Laser Applications”, J. Cryst. Growth, 251, 432 (2003).

S.V. Bandara, S.D. Gunapala, F.M. Reininger, J.K. Liu, S.B. Rafol, J.M. Fastenau, and A.W.K. Liu, “Large-format Dual-broadband QWIP Focal Plane Array Imaging Interferometers for Detection of Toxic Gases”, SPIE-AeroSense Conference, Orlando, FL, April 21–25, 2003, 5074-85 (invited).

D.I. Lubyshev, O. Malis, K. Teker, Y. Wu, J.M. Fastenau, X.-M. Fang, C. Doss, A.B. Cornfeld, and W.K. Liu, “Production of Next Generation InP-HBT Epiwafers by MBE”, 15th International Conference on InP and Related Materials, Santa Barbara, CA, May 12-16, 2003, ThB2.2.

J. Lowmaster, R. Pelzel, M. Dydyk, and D. Green, “Use of Re-etched and Re-polished Epi-wafers for MBE Calibration Substrates”, International Conference on GaAs Manufacturing Technology, Scottsdale, AZ, May 19-22, 2003, 3.2.

D.I. Lubyshev, K. Teker, O. Malis,Y. Wu, J.M. Fastenau, X.-M. Fang, C. Doss, A.B. Cornfeld, and W.K. Liu, “Commercial Production of Large Diameter InP-HBT Epiwafers by MBE”, International Conference on GaAs Manufacturing Technology, Scottsdale, AZ, May 19-22, 2003, 3.3.

M. Dahlström, Z. Griffith, M. Urteaga, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu, “InGaAs/InP DHBTs with >370 GHz ft and fmax using a Graded Carbon-Doped InGaAs Base”, 61st Device Research Conference, Salt Lake City, UT, June 23-25, 2003.

M. Dahlström, X.-M. Fang, D. Lubyshev, M. Urteaga, S. Krishnan, N. Parthasarathy, Y.M. Kim, Y. Wu, J.M. Fastenau, W.K. Liu, and M.J.W. Rodwell, “Wideband DHBTs using a Graded Carbon-Doped InGaAs Base”, IEEE Electron Device Letts. 24, 433 (2003).

D. Lubyshev, J. M. Fastenau, X.-M. Fang, Y. Wu, C. Doss and W.K. Liu, “Comparison of As- and P-Based Metamorphic Buffers for High Performance InP HBT and HEMT Applications”, 21st North American Conference on Molecular Beam Epitaxy, Keystone, CO, September 29–October 2, 2003.

S.V. Bandara, S.D. Gunapala, F.M. Reininger, J.K. Liu, S.B. Rafol, J.M. Mumolo, D.Z.Y. Ting, R.W. Chuang, T.Q. Trinh, J.M. Fastenau, and A.W.K. Liu, “Large-Format Dual-Broadband QWIP Focal Plane Array Imaging Interferometers”, Proc. SPIE Vol. 5074, Infrared Technology and Applications XXIX, Eds. B.F. Andresen and G.F. Fulop, (ISBN 0-8194-4991-1, SPIE, Washington, 2003), p. 787.

J Vukusic, P Modh, A Larsson, M Hammar, S Mogg, U Christiansson, V Oscarsson, E Ödling, J Malmquist, M Ghisoni, P Gong, E Griffiths, and A Joel, "MOVPE Grown GaInNAs VCSELs at 1.3 µm with a Conventional Mirror Design Approach", Electronics Letters.

A M Joel, "InGaAsN growth at IQE", at International Workshop on 'GaAs based lasers for the 1.3 - 1.5 µm wavelength range', Wroclaw, Poland, April 2003

S W Bland, R T Blunt and S Westwater, "The application of optical metrology in the production of InGaP HBTs", E-MRS Spring Meeting, Strasbourg, June 2003

J Mimila-Arroyo, S W Bland, S Cassette and S L Delage, "Burn-in effects in GaInP/GaAs/GaAs HBT's", Physica Status Solidi, 3, p902-906, 2003

J.Mimila-Arroyo, S.W.Bland and A Lusson, "Carbon site switching in carbon doped GaAs, its dependence on carbon concentration", Superficies y Vacío, 16(1), p37-39, 2003

J Mimila-Arroyo, V Cabrera, and S W Bland, "Dependence of burn-in effect on thermal annealing of the GaAs:C base layer in GaInP heterojunction bipolar transistors", Applied Physics Letters, 82(17), p2910-2912, 2003

S. Westwater, S.W. Bland, and R.T. Blunt, "Rotational effects on particle size and reflectivity dependence upon haze measurements in optical scatterometry". E-MRS Spring Meeting, Strasbourg, France, June 2003

2002

W. Songprakob, R. Zallen, D.V. Tsu, and W.K. Liu, “Inter-valenceband and Plasmon Optical Absorption in Heavily-doped GaAs:C”, J. Appl. Phys. 91, 171 (2002).

K.K. Choi, S.V. Bandara, S.D. Gunapala, W.K. Liu, and J.M. Fastenau, “Detection Wavelength of InGaAs/AlGaAs Quantum Wells and Superlattices”, J. Appl. Phys. 91, 551 (2002).

S. D. Gunapala, S.V. Bandara, J.K. Liu, S.B. Rafol, C.A. Shott, R. Jones, S. Laband, J. Woolaway II, J.M. Fastenau, and A.W.K. Liu, “9 mm Cutoff 640´512 Pixel GaAs/AlxGa1-xAs Quantum Well Infrared Photodetector Hand-held Camera”, SPIE-AeroSense Conference, Orlando, FL, April 1–5, 2002, 4721‑17 (invited), Proc. SPIE Vol. 4721, Infrared Detectors and Focal Plane Arrays VII, Eds. E.L. Dereniak and R.E. Sampson, (ISBN 0-8194-4471-5, SPIE, Washington, 2002), p.144.

Y. Wu, D. Lubyshev, X.-M. Fang, J.M. Fastenau, A.B. Cornfeld, W.K. Liu, H. Yang, H. Wang, and K. Radhakrishnan, J.C.M. Hwang, “A Comparative Study of DC and Microwave Characteristics of Lattice‑matched InP HBTs and Metamorphic HBTs Grown by MBE”, International Conference on GaAs Manufacturing Technology, San Diego, CA, April 8-11, 2002, 13A.

Z. Yu, R. Droopad, D. Jordan, J. Curless, Y. Liang, C. Overgaard, H. Li, A. Talin, T. Eschrich, B. Craigo, K. Eisenbeiser, R. Emrick, J. Finder, X. Hu, Y. Wei, J. Edwards, Jr., D. Convey, K. Moore, D. Marshall, J. Ramdani, L. Tisinger, W. Ooms, M. O’Steen, F. Towner, and T. Hierl, “GaAs-Based Heterostructures on Silicon”, International Conference on GaAs Manufacturing Technology, San Diego, CA, April 8-11, 2002, 13E (invited).

R. Droopad, K. Eisenbeiser, T. Hierl, D. Lubyshev, W. Ooms, M. O’Steen, J. Ramdani, and F. Towner, “Growth of GaAs on Silicon”, 14th International Conference on InP and Related Materials, Stockholm, Sweden, May 12-16, 2002, A4-7 (invited).

M. Dahlström, M. Urteaga, S. Krishnan, N. Parthasarathy, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu, “Ultra-Wideband DHBTs using a Graded Carbon-Doped InGaAs Base”, 14th International Conference on InP and Related Materials, Stockholm, Sweden, May 12-16, 2002, post‑deadline paper.

O. Baklenov, D. Lubyshev, Y. Wu, X.-M. Fang, J.M. Fastenau, L. Leung, F.J. Towner, A.B. Cornfeld and W.K. Liu, “MBE Production of Large-Diameter Metamorphic HEMT and HBT Wafers”, J. Vac. Sci. Technol. B, 20, 1200 (2002).

S.D. Gunapala, S.V. Bandara, J.K. Liu, S.B. Rafol, C.A. Shott, R.W. Jones, S. Laband, J.T. Woolaway II, J.M. Fastenau, A.W.K. Liu, M.D. Jhabvala, and K.K. Choi, “640×512 Pixel Four-Band, Broadband, and Narrowband Quantum Well Infrared Photodetector Focal Plane Arrays”, 47th Annual Meeting of SPIE, Seattle, WA, July 7–11, 2002, 4820-35 (invited).

S.V. Bandara, S. D. Gunapala, J.K. Liu, S.B. Rafol, C.A. Shott, R. Jones, S. Laband, J. Woolaway II, J.M. Fastenau, A.W.K. Liu, M. Jhabvala, and K.K. Choi, “Multiband GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plan Arrays”, 11th Annual AIAA/MDA Technology Conference, Monterey, CA, July 29-August 1, 2002.

S. Pradhan, P. Bhattacharya, and W.K. Liu, “A monolithically Integrated 1.55mm Photoreceiver-Laser Driver Optoelectronic Integrated Circuit”, Electronics Letts. 38, 987 (2002).

O. Malis, W.K. Liu, J.M. Fastenau, R. Pelzel, K. Evans, A. Joel, P. Gong, S.W. Bland, and N. Moshegov, “MBE Development of Dilute Nitrides for Commercial Long-wavelength VCSEL Applications”, 12th International Conference on Molecular Beam Epitaxy, San Francisco, CA, September 15–20, 2002, TuA1.

T. Hierl, M. O’Steen, R. Droopad, and O. Baklenov, “GaAs on Si Technology and Its Application to Power Amplifiers”, International Conference on Solid State Devices and Materials, Nagoya, Japan, September 17-19, 2002.

X.-M. Fang, Y. Wu, C. Doss, D.I. Lubyshev, J.M. Fastenau, W.K. Liu, Y.M. Kim, and M.J.W. Rodwell, “Metamorphic Buffer Comparisons for M-HBT Grown by MBE”, Compound Semiconductor Manufacturing Expo, San Jose, CA, November 11-13, 2002.

D.I. Lubyshev, K. Teker, P. Lee, Y. Wu, J.M. Fastenau, X.-M. Fang, C. Doss, A.B. Cornfeld, and W.K. Liu, “Commercial Production of Large Diameter InP-HBT Epiwafers by MBE”, Compound Semiconductor Manufacturing Expo, San Jose, CA, November 11-13, 2002.

P Abbott, C Rohr, J P Connolly, I Ballard, K Barnham, R Ginige, B Corbett, G Clarke, S W Bland and M Mazzer, "A comparative study of bulk InGaAs and InGaAs/InGaAs strain compensated quantum well cells for thermophotovoltaic applications", 29th IEEE Photovoltaic Specialists Conference; New Orleans, USA; May 2002

R Ginige, C Kelleher, B Corbett, J Hilgarth and G Clarke, "The Design, Fabrication and Evaluation of InGaAs/INP TPV Cells for Commercial Applications", Fifth Conference on Thermophotovoltaic Generation of Electricity, Rome, Italy, September 2002

J P Connolly, P Abbott, I Ballard, K W J Barnham, C Rohr, R Ginige, B Corbett, G Clarke, S Bland and M Mazzer, "Characterisation and Modelling of the Spectral Response of Strain Compensated InGaAsP Quantum Well Cells for TPV Applications", Fifth Conference on Thermophotovoltaic Generation of Electricity, Rome, Italy, September 2002

S A Rushworth, L M Smith, M S Ravetz, K M Coward, R Odedra, R Kanjolia, S W Bland, F Dimroth and A W Bett, "Correlation of reduced oxygen content in precursors with improved MOVPE layer quality", ICMOVPE, 2002 [Journal of Crystal Growth (in publication)].

K Cherkaoui, M E Murtagh, P V Kelly, G M Crean, S Cassette, S L Delage and S W Bland, "Defect study of GaInP/GaAs based heterojunction biplar transistor emitter layer", Journal of Applied Physics, 92, p2803-2806, 2002

S W Bland, "Future challenges for MOVPE - an industrial perspective", Journal of Materials Science: Materials in Electronics, 13, p679-682, 2002

J.Mimila-Arroyo, J.Chevallier and S.W.Bland, "Carbon reactivation kinetics in the base of heterojunction GaInP-GaAs bipolar transistor", Applied Physics Letters, 80, p3632, 2002

G M Lewis, P M Smowton, P Blood, G Jones and S W Bland, "Measurement of TE and TM spontaneous emission and gain in tensile strained GaInP laser diodes", Applied Physics Letters, 80(19), p3488-3490, 2002

2001

W. Zhou, S. Pradhan. P. Bhattacharya, W.K. Liu, and D. Lubyshev, “Low-Power Phototransreceiver Arrays with Vertically Integrated Resonant-Cavity LEDs and Heterostructure Phototransistors”, 14th Annual Meetings of LEOS, La Jolla, CA, November 12–15, 2001, ThU1.

S. Vijarnwannaluk, R. Zallen, W.K. Liu, M.L. Hsieh, and R.A. Stradling, “Optical Studies of GaAs:C Grown at Low Temperatures by Molecular Beam Epitaxy”, American Physical Society March Meeting, Seattle, WA, March 12–16, 2001, C29.010.

W. Songprakob, R. Zallen, D.V. Tsu, and W.K. Liu, “Plasmon and inter-valence band absorption in heavily‑doped p-type MBE-grown GaAs:C”, American Physical Society March Meeting, Seattle, WA, March 12–16, 2001, X30.007.

R.K. Ahrenkiel, R. Ellingson, W. Metzger, D.I. Lubyshev, and W.K. Liu, “Auger Recombination in Heavily Carbon-doped GaAs”, Appl. Phys. Letts. 78, 1879 (2001).

S. D. Gunapala, S.V. Bandara, J.K. Liu, J.M. Mumolo, F.M. Reininger, J.M. Fastenau, and A.W.K. Liu, “10- to 16-mm Broadband 640´512 GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array”, SPIE-AeroSense Conference, Orlando, FL, April 16–20, 2001, 4369-96.

S. Krishnan, M. Dahlström, T. Mathew, Y. Wei, D. Scott, M. Urteaga, M.J.W. Rodwell, W.K. Liu, D. Lubyshev, X.-M. Fang, and Y. Wu, “InP/InGaAs/InP Double Heterojunction Bipolar Transistors with 300 GHz fmax”, 13th International Conference on InP and Related Materials, Nara, Japan, May 14-18, 2001, TuB1-2.

D. Lubyshev, Y. Wu, X.-M. Fang, T. Yurasits, W.K. Liu, A.B. Cornfeld, D. Mensa, S. Jaganathan, R. Pullela, M. Dahlström, P.K. Sundararajan, T. Mathew, and M. Rodwell, “MBE Growth of Large Diameter Heavily Doped InP-based Lattice-matched and Metamorphic HBTs”, 13th International Conference on InP and Related Materials, Nara, Japan, May 14-18, 2001, WP-40.

D. Lubyshev, Y. Wu, X.-M. Fang, T. Yurasits, W.K. Liu, and A.B. Cornfeld, “Heavily Doped InP-based HBTs for New Wireless and Fiber-optic Telecommunication Applications”, 2001 International Conference on GaAs Manufacturing Technology, Las Vegas, NV, May 21-24, 2001, 9B.01.

J.H. Lee, S.S. Li, M.Z. Tidrow and W.K. Liu, “Investigation of Multi-color, Broadband Quantum Well Infrared Photodetectors with Digital Graded Superlattice Barrier and Linear- Graded Barrier for Long Wavelength Applications”, Infrared Physics & Technology, 42, 123 (2001).

S. Bandara, S. Gunapala, S. Rafol, D. Ting, J. Liu, J. Mumolo, T. Trinh, A.W.K. Liu, and J.M. Fastenau, “Quantum Well Infrared Photodetectors for Low Background Applications”, Infrared Physics & Technology, 42, 237 (2001).

J.M. Fastenau, W.K. Liu, X.M. Fang, D.I. Loubychev, R.I. Pelzel, T.R. Yurasits, T.R. Stewart, J.H. Lee, S.S. Li, and M.Z. Tidrow, “Commercial Production of QWIP Wafers by Molecular Beam Epitaxy”, Infrared Physics & Technology, 42, 407 (2001).

W.K. Liu, D. Lubyshev, X.-M. Fang, and T. Yurasits, “Metamorphic HBTs for New Wireless and Fiber-Optic Telecommunication Applications”, Compound Semiconductor Manufacturing Expo, Boston, MA, July 9-11, 2001, 1H.4.

D. Lubvshev, W.K. Liu, T. R. Stewart, A.B. Cornfeld, X.-M. Fang, X. Xu, P. Specht, C. Kisielowski, M.S. Goorsky, J. Mirecki-Millunchick, C.S. Whelan, W.E. Hoke, P.F. Marsh, S.P. Svensson, “Strain Relaxation and Dislocation Filtering in Metamorphic HEMT Structures Grown on GaAs Substrates”, J. Vac. Sci. Technol. B, 19, 1510 (2001).

L. Leung, D. Davison, A. Cornfeld, F. Towner, and D. Hartzell, “Cost-effective, High-volume Molecular Beam Epitaxy Using a Multi 6-in Wafer Reactor”, J. Cryst. Growth, 227-228, 143 (2001).

X.M. Fang, T. Yurasits, D. Loubychev, A.W.K. Liu, M. DeBruzzi, S. Priddy, and C. Schiprett, “Improved Substrate Temperature Uniformity in a Commercial 4-inch Single-wafer MBE Reactor with a Dual-Zone Substrate Heater”, J. Vac. Sci. Technol. B, 19, 1554 (2001).

O. Baklenov, A.B. Cornfeld, C. J. Doss, X.-M. Fang, J. M. Fastenau L. Leung, W.K. Liu, D. Lubyshev, Y. Luo, F.J. Towner, and Y. Wu, “Commercial Production of 4-Inch InP HBTs Using Molecular Beam Epitaxy”, 13th American Conference on Crystal Growth and Epitaxy, Burlington, VT, August 12–16, 2001, 2B.3.

S.V. Bandara, S. D. Gunapala, J.K. Liu, S.B. Rafol, D.Z. Ting, J.M. Mumolo, F.M. Reininger, J.M. Fastenau, and A.W.K. Liu, “Large-Format Broadband Multicolor GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Arrays”, SPIE 46th Annual Meeting, International Symposium on Optical Science and Technology, San Diego, CA, July 29–August 3, 2001, 4454-06 (invited), Proc. SPIE Vol. 4454, Materials for Infrared Detectors, Ed. R. E. Longshore, (ISBN 0‑8194‑4168-6, SPIE, Washington, 2001), p.30.

K.K. Choi, S.V. Bandara, S.D. Gunapala, W.K. Liu, and J.M. Fastenau, “Detection Wavelength of InGaAs/AlGaAs Quantum Wells and Superlattices”, 6th International Conference on Intersubband Transitions in Quantum Wells, Asilomar, CA, September 10–14, 2001, M4.7.

S. D. Gunapala, S.V. Bandara, J.K. Liu, J.M. Mumolo, F.M. Reininger, J.M. Fastenau, and A.W.K. Liu, “10- to 16-mm Broadband 640´512 GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array”, 2001 Intl. Conf. on Solid State Devices and Materials (SSDM), Tokyo, September 26–28, 2001, E-1-7, Proc. SPIE Vol. 4369, Infrared Technology and Applications XXVII, Eds. B.F. Andresen, G. F. Fulop, and M. Strojnik, (ISBN 0-8194-4064, SPIE, Washington, 2001), p.516.

J. Mirecki Millunchick, S. Manville, D. Lubyshev, X.M. Fang, J. M. Fastenau, W.K. Liu, and S.P. Svensson, “Morphology and Mobility of Metamorphic HEMT Structures Grown on Misoriented GaAs Substrates”, 20th North American Conference on Molecular Beam Epitaxy Providence, RI, October 1–3, 2001, 5-1.

O. Baklenov, D. Lubyshev, Y. Wu, X.-M. Fang, J.M. Fastenau, L. Leung, F.J. Towner, A.B. Cornfeld and W.K. Liu, “MBE Production of Large-Diameter Metamorphic HEMT and HBT Wafers”, 20th North American Conference on Molecular Beam Epitaxy, Providence, RI, October 1–3, 2001, 5-3.

L. Jiang, S.S. Li, M.Z. Tidrow, W.R. Dyer, W.K. Liu, J. Fastenau, and T.R. Yurasits, “Three-Stack, Three‑Color Quantum Well Infrared Photodetector for Mid-, Long-, and Very Long-Wavelength Infrared Detection”, Appl. Phys. Lett. 79, 2982 (2001).

W. Zhou, S. Pradhan, P. Bhattacharya, W.K. Liu, and D. Lubyshev, “Low-Power Phototransceiver Arrays with Vertically Integrated Resonant-Cavity LEDs and Heterostructure Phototransistors”, IEEE Photonics Technol. Letts. 13, 1218 (2001).

J Mimila-Arroyo and S Bland, "Carbon Reactivation Kinetics in GaAs; Its Dependence on Dopant Precursor, Doping Level and Layer Thickness".

G M Lewis, P M Smowton, P Blood, G Jones and S Bland, "Measurement of TE and TM Spontaneous Emission and Gain in Tensile Strained GaInP laser diodes".

J Mimila-Arroyo, A Lusson, J Chevallier, M Barbé, B Theys, F Jomard and S W Bland, "Carbon acceptor doping efficiency in GaAs grown by metalorganic chemical vapor deposition", Applied Physics Letters, 79, p3095, 2001

K J Weeks, S J C Irvine, A Stafford, S Jones, S W Bland and A Joel, "In situ reflectance monitoring in MOVPE of a multiwafer reactor", Materials Science and Engineering, B80, p46-49, 2001

K.R. Evans and S.P. Roth, “Optical Sensing Opportunities in Production MBE”, Digest of the 2000 IEEE/LEOS Summer Topical Meeting on Electronic-Enhanced Optics, Optical Sensing in Semiconductor Manufacturing, Electro-Optics in Space, Broadband Optical Networks, Aventura, FL, July 24-16, 2000 (ISBN 0769506453, IEEE, Piscataway, NJ, 2000), p. II29.

2000

S.Q. Murphy, J.L. Hicks, W.K. Liu, S.J. Chung, K.J. Goldammer, and M.B. Santos, “Studies of the Quantum Hall to Quantum Hall Insulator Transition in InSb Based 2DESs”, Physica E, 6, 293 (2000).

J.L Hicks, S.Q. Murphy, S.J. Chung, K.J. Goldammer, W.K. Liu, and M.B. Santos, “Breakdown of the IQHE in InSb/InAlSb Quantum Wells”, American Physical Society March Meeting, Minneapolis, MN, March 20–24, 2000, A17.006.

G.A. Khodaparast, B.A. Mason, R.E. Doezema, S.J. Chung, K.J. Goldammer, W.K. Liu, and M.B. Santos, “Electron spin resonance in InSb quantum wells”, American Physical Society March Meeting, Minneapolis, MN, March 20–24, 2000, E28.007.

D.I. Lubyshev, W.K. Liu, T.R. Stewart, and A.B. Cornfeld, “A Comparative Study of As, Sb and P-based Metamorphic HEMTs”, International Conference on GaAs Manufacturing Technology, Washington D.C., May 1-4, 2000, 6A.01.

D.I. Lubyshev, W.K. Liu, T.R. Stewart, X.M. Fang, A.B. Cornfeld, W.E. Hoke, S.P. Svensson, and J.M. Millunchick, “MBE Growth of High Quality Metamorphic HEMTs on GaAs”, 12th International Conference on InP and Related Materials, Williamsburg, VA, May 14-18, 2000, WP2.13.

K.K. Choi, C.J. Chen, K.L Bacher, and D.C. Tsui, “New Designs and Applications of Corrugated QWIPs”, Physica E, 7, 112 (2000).

S.J. Chung, N. Dai, G.A. Khodaparast, , J.L. Hicks, K.J. Goldammer, F. Brown, W.K. Liu, R.E. Dozema, S.Q. Murphy, and M.B. Santos, “Electronic Characterization of InSb Quantum Wells”, Physica E, 7, 809 (2000).

W.K. Liu, D.I. Lubyshev, P. Specht, R. Zhao, E.R. Weber, A.J. SpringThorpe, R.W. Streater, S. Vijarnwannaluk, W. Songprakob, and R. Zallen, “Properties of Carbon-doped Low‑temperature GaAs and InP Grown by Solid‑source MBE Using CBr4”, J. Vac. Sci. Technol. B, 18, 1594 (2000).
J.H. Lee, S.S. Li, M.Z. Tidrow and W.K. Liu, “Multi-color, Broadband Quantum Well Infrared Photodetectors with Digital Graded Superlattice Barrier and Linear- Graded Barrier for Long Wavelength Applications”, QWIP 2000 Workshop, Dana Point, CA, July 27–29, 2000, A3.

J.M. Fastenau, W.K. Liu, X.M. Fang, D.I. Loubychev, R.I. Pelzel, T.R. Yurasits, T.R. Stewart, J.H. Lee, S.S. Li, and M. Z. Tidrow, “Commercial Production of QWIP Wafers by Molecular Beam Epitaxy”, QWIP 2000 Workshop, Dana Point, CA, July 27–29, 2000, A34.

J.H. Lee, S.S. Li, M.Z. Tidrow, and W.K. Liu, “High Sensitivity Broadband Quantum Well Infrared Photodetector with Double/Linear-Graded Barrier for 8-12mm Detection”, Electronics Letts. 36, 1058 (2000).

L. Leung, D. Davison, A. Cornfeld, F. Towner, and D. Hartzell, “Cost-effective, High-volume Molecular Beam Epitaxy Using a Multi 6-in Wafer Reactor”, 11th International Conference on Molecular Beam Epitaxy, Beijing, China, September 11-15, 2000.

D. Lubvshev, W.K. Liu, T. R. Stewart, A. B. Cornfeld, X.–M. Fang, X. Xu, P. Specht, C. Kisielowski, M. S. Goorsky, J. Mirecki-Millunchick, C. S. Whelan, W. E. Hoke, P. F. Marsh, S. P. Svensson, “Strain Relaxation and Dislocation Filtering in Metamorphic HEMT Structures Grown on GaAs Substrates”, 19th North American Conference on Molecular Beam Epitaxy, Tempe, AZ, October 15–18, 2000, 8.2.

X.M. Fang, T. Yurasits, D. Loubychev, A.W.K. Liu, M. DeBruzzi, S. Priddy, and C. Schiprett, “Improved Substrate Temperature Uniformity in a Commercial 4-inch Single-wafer MBE Reactor with a Dual-Zone Substrate Heater”, 19th North American Conference on Molecular Beam Epitaxy, Tempe, AZ, October 15–18, 2000, P1.12.

W. Songprakob, R. Zallen, W.K. Liu, and K.L. Bacher, “Infrared Studies of Hole-Plasmon Excitations in Heavily‑doped p-type MBE-Grown GaAs:C”, Phys. Rev. B, 62, 4501 (2000).

D Burns, M Hetterich, A I Ferguson, E Bente, M D Dawson, J I Davies and S W Bland, "High Average Power (>20W) Nd:YVO4 Lasers Mode Locked by Strain Compensated Saturable Bragg Reflectors".Vol 17, No 6/June 2000/J Opt Soc Am B.

M Hetterich, M D Dawson, A Yu Egorov, D Bernklau, H Riechert, S W Bland and J I Davies, "Comparison of GaInNAs / GaAs and Strain-Compensated InGaAs / GaAsP Quantum Wells for 1200-1300 nm Diode Lasers".

I J Griffin, D Wolverson, J J Davies, M E Ismail, J Heffernan, S W Bland and G Duggan, "Band Structure Parameters of Quaternary Phosphide Semiconductor Alloys Investigated by Magneto-Optical Spectroscopy".

S A Rushworth, L M Smith, R T Blunt, J I Davies, S Hunjan and A Joel, "Solution CBr4 : An Improved MOVPE Dopant Source".

M S Ravetz, L M Smith, S A Rushworth, A B Leese, R Kanjolia, J I Davies and R T Blunt, "Properties of Solution TMI as an OMVPE Source", Journal of Electronic Materials, Vol. 29, No 1, 2000.

S Cassette, S L Delage, E Chartier, D Floriot, M A Poisson, J C Garcia, C Grattepain, J Mimila Arroyo, R Plana and S W Bland, "Hydrogen - Related Effects in GaInP / GaAs HBTs : Incorporation, Removal and Influence on Device Reliability".

G M Lewis, J D Thomson, H D Summers P M Smowton, P Blood, G Jones and S Bland, "Breakdown in Thermodynamic Balance Between Optical Gain and Spontaneous Emission in GaInP Quantum Well Lasers".

J Mimila-Arroyo and S W Bland "Acceptor Reactivation Kinetics in Heavily Carbon-Doped GaAs Epitaxial Layers", Applied Physics Letters, Volume 77, Number 8, 21 August 2000.

I J Griffin, D Wolverson, J J Davies, M Emam-Ismail, J Heffernan, A H Kean, S W Bland and G Duggan, "Band Structure Parameters of Quaternary Phosphide Semiconductor Alloys Investigated by Magneto-Optical Spectroscopy", Semicond. Sci. Technol. 15 (2000).

1999

S. Vijarnwannaluk, W. Songprakob, R. Zallen, W.K. Liu, and K.L. Bacher, “Local-mode Infrared Absorption in Heavily-doped p-type MBE-grown GaAs:C”, American Physical Society Centennial Meeting, Atlanta, GA, March 20–26, 1999, WC15.01.

W. Songprakob, S. Vijarnwannaluk, R. Zallen, W.K. Liu, and K.L. Bacher, “Infrared Studies of Hole-plasmon Excitations in Heavily-doped p-type MBE-grown GaAs:C”, American Physical Society Centennial Meeting, Atlanta, GA, March 20–26, 1999, WC15.02.

R. Zallen, W. Songprakob, S. Vijarnwannaluk, M.L. Hsieh, R.A. Stradling, W.K. Liu, and K.L. Bacher, “Infrared Participation of the Split-off Valence Band in the Raman and Photoluminescence Spectra of MBE GaAs:C”, American Physical Society Centennial Meeting, Atlanta, GA, March 20–26, 1999, WC15.03.

W.K. Liu, K. Bacher, F.J. Towner, T.R. Stewart, C. Reed, P. Specht, R.C. Lutz, R. Zhao, and E.R. Weber, “Properties of C-doped LT-GaAs Grown by MBE Using CBr4”, J. Cryst. Growth, 201/202, 217 (1999).

K.J. Goldammer, S.J. Chung, W.K. Liu, M.B. Santos, J.L. Hicks, S. Raymond, and S.Q. Murphy, “High‑mobility Electron Systems in Remotely-doped InSb Quantum Wells”, J. Cryst. Growth, 201/202, 753 (1999).

P. Specht, R.C. Lutz, R. Zhao, E.R. Weber, W.K. Liu, K. Bacher, F.J. Towner, T.R. Stewart, and M. Luysberg, “Improvement of Molecular Beam Epitaxy-grown Low-temperature GaAs through p Doping with Be and C”, J. Vac. Sci. Technol. B, 17(3), 1200 (1999).

S.J. Chung, N. Dai, J. Hicks, K.J. Goldammer, F. Brown, W.K. Liu, R.E. Doezema, S.Q. Murphy, and M.B. Santos, “Electronic Characterization of InSb Quantum Wells”, 9th International Conference on Modulated Semiconductor Structures, Fukuoka, Japan, July 12-16, 1999, D07.

M.Z. Tidrow, X.D. Jiang, S.S. Li, J. Moon, W.K. Liu, and K. Bacher, “Very-Long-Wavelength Quantum Well Infrared Photodetectors”, 8th Annual AIAA/BMDO Technology Conference, MIT Lincoln Laboratory, Lexington, MA, July 19-22, 1999, 08-03.

N.D. Jäger, P. Specht, W.K. Liu, F. Morier-Genoud, M. Salmeron, and E. R. Weber, “Cross-sectional Scanning Tunneling Microscopy Studies of Low-temperature Grown GaAs”, 20th International Conference on Defects in Semiconductors, Berkeley, CA, July 26–30, 1999, ThP.45.

R.K. Ahrenkiel, R. Ellingson, D.I. Lubyshev, and W.K. Liu, “Recombination Lifetimes in Heavily Carbon Doped GaAs Double Heterostructures”, European GaAs and Related III-V Compounds Application Symposium, Munich, Germany, Oct. 4-8, 1999.

W.K. Liu, P. Specht, D.I. Lubyshev, A.J. SpringThorpe, R.W. Streater, R. Zhao, N.D. Jäger, S. Vijarnwannaluk, W. Songprakob, R. Zallen, and E.R. Weber, “Properties of Carbon-doped Low‑temperature GaAs and InP Grown by Solid-source MBE Using CBr4”, 18th North American Conference on Molecular Beam Epitaxy, Banff, Canada, Oct. 10-13, 1999, P2.14.

J.-H. Lee, S.S. Li, M.Z. Tidrow, W.K. Liu, and K. Bacher, “A Novel Quantum Well Infrared Photodetector with Digital Graded Superlattice Barrier for Long Wavelength and Broadband Detection”, 196th Electrochemical Soc. Meeting, Honolulu, HI, Oct. 17-22, 1999, Proc. International Symposium on Advanced Luminescent Materials and Quantum Confinement, Vol. 99-22, p. 436.

M.Z. Tidrow, X.D. Jiang, S.S. Li, J. Moon, and W.K. Liu, “Very-Long-Wavelength Quantum Well Infrared Photodetectors”, 196th Meeting of the Electrochemical Society, Honolulu, HI, Oct. 17-22, 1999, U1‑1884, Proc. International Symposium on Advanced Luminescent Materials and Quantum Confinement, Vol. 99-22, p. 447.

J.-H. Lee, S.S. Li, M.Z. Tidrow, W.K. Liu, and K. Bacher, “Quantum Well Infrared Photodetectors with Digital Graded Superlattice Barrier for Long Wavelength and Broadband Detection”, Appl. Phys. Lett. 75, 3207 (1999).

G Jones, N Cain, D W Peggs, R P Petrie, S W Bland and D J Mowbray, "An Optical Study of the Properties of (AlxGa1-x)0.51In0.49P Epitaxial Layers with Varying Composition, Hydrostatic Pressure and GaAs Substrate Orientation", Materials Science and Engineering B66 (1999) 126-130.

1998

K. Bacher, W.K. Liu, Y. Wu, and T. Stewart, “Strain-compensated InGaAs/AlGaAsP Quantum Well Intersubband photodetectors for Mid-IR Wavelength”, Photonics West International Symposium on Optoelectronics ’98: Integrated Devices and Applications, San Jose, CA, January 24-30, 1998, S3, Proc. SPIE Vol. 3287, Photodetectors: Materials and Devices III, Ed. G.J. Brown, (SPIE, Washington, 1998) p.80.

S.Q. Murphy, S. Raymond, J.L. Hicks, J.E. Furneaux, K.J. Goldammer, W.K. Liu, M.B. Santos, and E. Watters, “Hopping Conductivity in InSb based 2D Electronic Systems at High Magnetic Fields”, American Physical Society Meeting, Los Angeles, CA, March 16–22, 1998, G33.12.

W.K. Liu, K.J. Goldammer, and M.B. Santos, “Surface Segregation and Dopant Compensation in Si d-doped InSb and AlxIn1-xSb Grown by Molecular Beam Epitaxy”, American Physical Society Meeting, Los Angeles, CA, March 16–22, 1998, Q23.06.

M.B. Johnson, S.C. Lindstrom, K.J. Goldammer, W.K. Liu, and M.B. Santos, “Atomic Force Microscopy Used to Improve the Mobility of InSb-based Quantum Wells”, American Physical Society Meeting, Los Angeles, CA, March 16–22, 1998, X27.08.

K.J. Goldammer, W.K. Liu, G.A. Khodaparast, F.W. McKenna, and M.B. Santos, “High-Mobility InSb Quantum Wells Remotely-Doped with Si”, American Physical Society Meeting, Los Angeles, CA, March 16-22, 1998, X27.09.

K. Bacher, W.K. Liu, Y. Wu, M. Micovic, D. Lubyshev, D.L. Miller, Y. Yun, J. Atherton, J. Chi, P. Ersland, M. Fukuda, A. Hansen, K. Lu, M. O’Keefe, P. Staecher, and X. Zhang, “Molecular Beam Epitaxy Grown Carbon-Doped Heterojunction Bipolar Transistors”, International Conference on GaAs Manufacturing Technology, Seattle, WA, April 27-30, 1998.

K.J. Goldammer, W.K. Liu, G.A. Khodaparast, S.C. Lindstrom, M.B. Johnson, R.E. Doezema, and M.B. Santos, “Electrical Properties of InSb Quantum Wells Remotely Doped with Si”, J. Vac. Sci. Technol. B, 16, 1367 (1998).

X.M. Fang, I-N. Chao, B.N. Strecker, P.J. McCann, S. Yuan, W.K. Liu, and M.B. Santos,” MBE Growth of Bi2Se3- and Tl2Se-doped PbSe and PbEuSe on CaF2/Si(111)”, J. Vac. Sci. Technol. B, 16, 1459 (1998).

W.K. Liu, K. Bacher, F.J. Towner, and T.R. Stewart, “MBE Growth and Characterization of C-doped LT‑GaAs”, 40th Electronic Materials Conference, Charlottesville, VA, June 24-26, 1998, A6.

W.K. Liu, K.J. Goldammer and M.B. Santos, “Surface Segregation and Compensation of Si in d-doped InSb and AlxIn1-xSb Grown by Molecular Beam Epitaxy”, J. Appl. Phys. 84, 205 (1998).

K.J. Goldammer, N. Dai, J. Hicks, S.J. Chung, F. Brown, S. Raymond, W.K. Liu, R.E. Doezema, J.E. Furneaux, S.Q. Murphy, and M.B. Santos, “Two-Dimensional Electron Systems in InSb Quantum Wells”, 11th Conference on Superlattice, Microstructures and Microdevices (Satellite Conference of the 24th International Conference on Physics of Semiconductors), Hurgada, Egypt, July 27–August 1, 1998.

D. Hartzell, L.K. Leung, and F.J. Towner, “Cost-effective, High-volume Molecular Beam Epitaxy”, JOM, 50, 37 (1998).

K.J. Goldammer, S. J. Chung, W.K. Liu, and M.B. Santos, “High-mobility Electron Systems in Remotely-doped InSb Quantum Wells”, 10th International Conference on Molecular Beam Epitaxy, Cannes, France, August 31-September 4, 1998, PT5.9.

A.W.K. Liu, K. Bacher, E.R. Weber, P. Specht, F.J. Towner, and T.R. Stewart, “Properties of C-Doped LT‑GaAs Grown by MBE Using CBr4”, 10th International Conference on Molecular Beam Epitaxy, Cannes, France, August 31-September 4, 1998, PT5.20.

P. Specht, R.C. Lutz, R. Zhao, M.J. Cich, O.H. Lam, E.R. Weber, W.K. Liu, K. Bacher, F.J. Towner, T.R. Stewart, and M. Luysberg, “Growth and Characterization of p-doped LT-GaAs”, Symposium on Non‑stoichiometric III-V Compounds, Erlangen, Germany, October 5–7, 1998.

P. Specht, W.K. Liu, K. Bacher, R.C. Lutz, R. Zhao, M. Luysberg, F.J. Towner, T.R. Stewart, and E.R. Weber, “Improvement of MBE-grown LT-GaAs through p-doping with Be and C”, 17th North American Conference on Molecular Beam Epitaxy, College Station, PA, October 24-26, 1998, P.10.

A.W. Hanson, D. Danzilio, K. Bacher, and L. Leung, “A Selective Gate Recess Process Utilizing MBE-grown In0.5Ga0.5P Etch-stop Layers for GaAs-based FET Technologies”, 20th Annual IEEE GaAs IC Symposium, Atlanta, GA, November 1-4, 1998, J.3.

K.K. Choi, K.L. Bacher, and Y. Wu, “Corrugated QWIP with Dielectric Coverage for Focal Plane Array Applications”, 194th Meeting of the Electrochemical Society and 6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Boston, MA, November 1-6, 1998, N4‑610.

M. Tidrow, X. Jiang, S. Li, and K. Bacher, “A Novel Four-Color Quantum Well Infrared Photodetector”, 194th Meeting of the Electrochemical Society and 6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Boston, MA, November 1-6, 1998, N4-614.