2008 research papers

W.K. Liu, D. Lubyshev, J.M. Fastenau, Y. Wu, M.T. Bulsara and E.A. Fitzgerald, M. Urteaga, W. Ha, J. Bergman, B. Brar, W.E. Hoke, J.R. LaRoche, K.J. Herrick, T.E. Kazior, D. Clark, D. Smith, R.F. Thompson, C. Drazek, and N. Daval, “Monolithic Integration of InP-based Transistors on Si substrates using MBE”, 15th International Conference on Molecular Beam Epitaxy, Vancouver, Canada, August 3–8, 2008 (THA1.1, invited).

H.S. Djie, Y. Wang, B.S. Ooi, D.-N. Wang, J.C.M. Hwang, Y. Wu, X.-M. Fang, J.M. Fastenau, W.K. Liu, G.T. Dang, and W.H. Chang, “Quantum Dash Intermixing,” IEEE J. Selected Topics in Quantum Electron. 14, 1239 (2008).

B.S. Ooi, H.S. Djie, Y. Wang, C.-L. Tan, J.C.M. Hwang, X.-M. Fang, J.M. Fastenau, A.W.K. Liu, G.T. Dang, and W.H. Chang, “Quantum Dashes on InP Substrate for Broadband Emitter Applications,” IEEE J. Selected Topics in Quantum Electron. 14, 1230 (2008) invited.

W. Ha, M. Urteaga, J. Bergman, B. Brar, W.K. Liu, D. Lubyshev, J.M. Fastenau, Y. Wu, M.T. Bulsara, E.A. Fitzgerald, W.E. Hoke, J.R. LaRoche, K.J. Herrick, T.E. Kazior, D. Clark, D. Smith, R.F. Thompson, C. Drazek, and N. Daval, “Small-area InP DHBTs Grown on Patterned Lattice-engineered Silicon Substrates”, 66th Device Research Conference, Santa Barbara, CA, June 23–25, 2008 (IV.B-9).

D. Lubyshev, J. M. Fastenau, W.K. Liu, Y. Wu, M. T. Bulsara, E. A. Fitzgerald, and W. E. Hoke, “MBE Growth of M-HEMTs and M-HBTs on Ge and Ge-on-Insulator Substrates”, J. Vac. Sci. Technol. B, 26, 1115 (2008).

Y. Wang, H.S. Djie, V. Hongpinyo, C.-L. Tan, B.-S. Ooi, J. Hwang, X.-M. Fang, Y. Wu, J. Fastenau, A. Liu, G. Dang, W. Chang, “Epitaxial Growth of High Quality InAs/InGaAlAs Quantum Dash-in-well Structure on InP”, 20th InP and Related Materials Conference, Versailles, France, May 25–29, 2008 (WP8).

D. Lubyshev, J.M. Fastenau, Y. Wu, W.K. Liu, M. Urteaga, W. Ha, J. Bergman, B. Brar, M.T. Bulsara, E.A. Fitzgerald, W.E. Hoke, J.R. LaRoche, K.J. Herrick, and T.E. Kazior, “Direct Growth of InP-HBT Structures on Ge-on-Insulator/Si Substrates by MBE”, 20th InP and Related Materials Conference, Versailles, France, May 25–29, 2008 (MoB2.3). 

D Troy, A Eisenbach, P Cooke, A Pearce, G Clarke, I Davies, S Barne, "Integration and Qualification of a Second Site HBT Epitaxial Wafer Foundry", CS-Mantech, Chicago, April 2008

D. Lubyshev, J.M. Fastenau, W.K. Liu, “IQE’s Epiwafers Unite III-Vs and Silicon”, Compound Semiconductor Magazine, 14, April 2008 (p. 25).

K.J. Herrick, M. Urteaga, A.W.K. Liu, D.I. Loubychev, J.M. Fastenau, E. Fitzgerald, M. Bulsara, B. Brar, W. Ha, J. Bergman, T. Kazior, N. Daval, “Direct Growth of III-V Devices on Silicon”, 2008 MRS Spring Meeting, San Francisco, CA, March 24−28, 2008 (C2.1).

K.J. Herrick, E. Fitzgerald, A. Liu, B. Brar, M. Urteaga, M. Bulsara, D. Clark, and T. Kazior, “Direct Growth of Compound Semiconductors on Silicon”, 33rd Annual GOMACTech Conference, Las Vegas, NV, March 17 20, 2008 (9.2).

Y. Wang, H.S. Djie, B.S. Ooi, J.C.M. Hwang, X.-M. Fang, Y. Wu, J.M. Fastenau, W.K. Liu, G.T. Dang and W.H. Chang, "Monolithic InAs/InAlGaAs/InP Quantum-Dash-in-Well Extended Cavity Laser Fabricated By Postgrowth Intermixing", Laser Physics, 18, 400 (2008).

2007 research papers

M.K. Hudait, S. Datta, G. Dewey, J.M. Fastenau, J. Kavalieros, W.K. Liu, D. Loubychev, R. Pillarisetty, M. Radosavljevic and R. Chau, “Heterogeneous Integration of Enhancement Mode In0.7Ga0.3As Quantum Well Transistor on Silicon Substrate using Composite Buffer Architecture for High-Speed and Low-voltage (e.g., 0.5V) Digital Logic Applications”, IEEE International Electron Device Meeting (IEDM), Washington, DC, Dec 10-12, 2007 (23.5).

D. Lubyshev, J. M. Fastenau, W.K. Liu, Y. Wu, M. T. Bulsara, E. A. Fitzgerald, and W. E. Hoke, “MBE Growth of M-HEMTs and M-HBTs on Ge and Ge-on-Insulator Substrates”, 25th North American Conference on Molecular Beam Epitaxy, Albuquerque, NM, Sep. 23–26, 2007 (Tu5.2).

S. Datta, G. Dewey, J.M. Fastenau, M.K. Hudait, D. Loubychev, W.K. Liu, M. Radosavljevic, W. Rachmady and R. Chau, “Ultra High-Speed, 0.5V Supply Voltage In0.7Ga0.3As Quantum-Well Transistors on Silicon Substrate”, IEEE Electron Device Letts. 28, 685 (2007).

H.S. Djie, C.L. Tan, B.S. Ooi, J.C.M. Hwang, X.-M. Fang, Y. Wu, J.M. Fastenau, W.K. Liu, G.T. Dang, and W.H. Chang, “Ultrabroad Stimulated Emission from Quantum-dash Laser,” Appl. Phys. Lett. 91, 111116 (2007).

E. Lind, A.M. Crook, Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A.W.K. Liu, “560 GHz ft, fmax InGaAs/InP DHBT in a Novel Dry-etch Emitter Process”, 65th Device Research Conference, University of Notre Dame, IN, June 18?20, 2007, V.B-7.

T. Yang, Y. Xuan, P. Ye, W. Wang, J.C.M. Hwang, D. Lubyshev, J.M. Fastenau, W.K. Liu, T.D. Mishima, and M.B. Santos, “Capacitance-Voltage Characterization of InSb MOS Structures with ALD High-k Gate Dielectrics”, 49th Electronic Materials Conference, University of Notre Dame, IN, June 20?22, 2007, DD4.

Z. Griffith, E. Lind, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A.W.K. Liu, “Sub 300nm InGaAs/InP Type-I DHBTs with a 150 nm Collector, 30 nm Base Demonstrating 755 GHz fmax and 416 f?”, 19th International Conference on InP and Related Materials, Matsue, Japan, May 14?18, 2007, WeA3-2, (Proceedings ISBN 1-4244-0874-1, IEEE, NJ, 2007, p. 403).

H.S. Djie, Y. Wang, B.S. Ooi, D.-N. Wang, J.C.M. Hwang, Y. Wu, X.-M. Fang, J.M. Fastenau, and A.W.K. Liu, G.T. Dang, and W.H. Chang, “Postgrowth Wavelength Engineering of InAs/InAlGaAs/InP Quantum-dash-in-well Lasers”, SPIE Photonics West OPTO 2007 Symposium OE11: Optoelectronic Integrated Circuits XI (6476-28), San Jose, Jan 20?25, 2007.

H.S. Djie, Y. Wang, B.S. Ooi, D.-N. Wang, J.C.M. Hwang, X.-M. Fang, Y. Wu, J.M. Fastenau, W.K. Liu, G.T. Dang, and W.H. Chang, “Wavelength Tuning of InAs/InAlGaAs Quantum-dash-in-well Laser Using Postgrowth Intermixing”, Electron. Letts. 43, 33 (2007).

H.S. Djie, B.S. Ooi, X.-M. Fang, Y. Wu, J.M. Fastenau, W.K. Liu, and M. Hopkinson, “Room Temperature Broadband Emission of an InGaAs/GaAs Quantum Dots Laser”, Optics Letts. 32, 44 (2007), Virtual J. Nanoscale Sci. Technol. 15(2) (2007).

H.S. Djie, D.-N. Wang, B.S. Ooi, J.C.M. Hwang, X.-M. Fang, Y. Wu, J.M. Fastenau, and W.K. Liu, “Emission wavelength trimming of self-assembled InGaAs/GaAs Quantum Dots with GaAs/AlGaAs superlattices by rapid thermal annealing”, Thin Solid Films, 515, 4344 (2007).

2006 research papers

H.S. Djie, D.-N. Wang, B.S. Ooi, J.C.M. Hwang, X.-M. Fang, Y. Wu, J.M. Fastenau, and W.K. Liu, "Intermixing of InGaAs Quantum-dots Grown by Cycled Monolayer Deposition", J. Appl. Phys. 100, 033527, (2006).

N. Parthasarathy, Z. Griffith, C. Kadow, U. Singisetti, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A.W.K. Liu, "Collector-Pedestal InGaAs/InP DHBTs Fabricated in a Single-Growth, Triple-Implant Process", IEEE Electron Device Letts. 27, 313 (2006).

E. Lind, Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A.W.K. Liu, "250 nm InGaAs/InP DHBTs w/ 650 GHz fmax and 420 GHz ft, Operating Above 30 mW/mm2", 64th Device Research Conference, Penn State University, PA, June 26-28, 2006.

Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A.W.K. Liu, "In0.53G0.47aAs/InP DHBTs with a 75 nm Collector, 20 nm Base Demonstrating 544 GHz ft, BVCEO = 3.1 V, and BVCBO = 3.4 V", 18th International Conference on InP and Related Materials, Princeton, NJ, May 8-11, 2006, MB-2.5.

R T Blunt, "White Light Interferometry - A production worthy technique for measuring surface roughness on semiconductor wafers". 2006 Int. Conf. on Compound Semiconductor Manufacturing Technology, Vancouver BC, Canada, April 24 - 27, 2006.

R T Blunt, "Interferometry speeds surface roughness analysis". Compound Semiconductor, June 2006 12(5) 18 - 21 (2006).

2005 research papers

Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu, "InGaAs/InP DHBTs with 120 nm collector having simultaneously high ft ,fmax > 450 GHz", IEEE Electron Device Letts. 26, 530 (2005).

S.V. Bandara, S.D. Gunapala, J.K. Liu, S.B. Rafol, C.J. Hill, D.Z.Y. Ting, J.M. Mumolo, T.Q. Trinh, J.M. Fastenau, and A.W.K. Liu, "Tuning and Tailoring of Broadband Quantum-well Infrared Photodetector Responsivity Spectrum", Appl. Phys. Letts. 86, 151104 (2005).

Z. Griffith, M. Dahlström, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu, "InGaAs/InP DHBTs for Increased Digital IC Bandwidth having a 391 GHz ft and 505 GHz fmax", IEEE Electron Device Letts. 26, 11 (2005).

J.M. Fastenau, D.I. Lubyshev, Y. Wu, C. Doss, and W.K. Liu, "Comparative Studies of the Epi-Readiness of 4" InP Substrates for MBE Growth", J. Vac. Sci. Technol. B, 23, (2005).

J.M. Fastenau, W.K. Liu, D. Lubyshev, X.-M. Fang, Y. Wu, and C. Doss, "Evaluation of 4" InP Substrates for Epi-Ready Production MBE Growth", International Conference on Compound Semiconductor Manufacturing Technology, New Orleans, LA, April 11-14, 2005, 4.5.

Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu, "InGaAs/InP DHBTs with 120 nm collector having simultaneously high ft, fmax > 450 GHz", IEEE Electron Device Letts. (2005).

W.K. Liu, J.M. Fastenau, D. Lubyshev, X.-M. Fang, Y. Wu, and C. Doss, "InP Substrate Evaluation for Epi-Ready MBE Growth", 17th International Conference on InP and Related Materials, Glasgow, Scotland, UK, May 8-12, 2005, TP-15.

Z. Griffith, M. Dahlström, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A.W.K. Liu, "In0.53G0.47aAs/InP Type-I DHBTs with 100 nm Collector and 491 GHz ft, 415 GHz fmax", 17th International Conference on InP and Related Materials, Glasgow, Scotland, UK, May 8-12, 2005, TuA-2.4.

Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A. Liu, "InGaAs/InP Type-I DHBTs Having 450 GHz ft and 490 GHz fmax with Ccb/Ic 0.38 ps/V", 63rd Device Research Conference, Santa Barbara, CA, June 20-22, 2005, VII.B-7.

H. S. Djie, D.-N. Wang, J. C. M. Hwang and B. S. Ooi, X.-M. Fang, Y. Wu, J. M. Fastenau, and W. K. Liu, "Emission wavelength trimming of self-assembled InGaAs/GaAs Quantum Dots with GaAs/AlGaAs superlattices by rapid thermal annealing", Symp. J: III-V Semiconductors for Microelectronic and Optoelectronic Applications, 3rd Intl. Conf. on Materials for Advanced Technologies (ICMAT) and 9th Intl. Conf. on Advanced Materials (IUMRS-ICAM), Singapore, July 3-8, 2005, J-3-OR5.

L. Blunt, J. Armstrong, & R. Blunt, "The use of advanced 3D surface metrology for the characterisation of epi-wafers and Si structures". Phys. Stat. Sol., C 2, No 4, 1251-1258 (2005).