2011 research papers

V. Jain, E. Lobisser, A. Baraskar, B.J. Thibeault, M.J.W. Rodwell, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J.M. Fastenau, and W.K. Liu, “InGaAs/InP DHBTs Demonstrating Simultaneous fτ/fmax ~ 460/850 GHz in a Refractory Emitter Process,” 23rd InP and Related Materials Conference, Berlin, Germany, May 22–26, 2011.

G. Belenky, S. Svensson, D. Donetsky, S. Suchalkin, D.Wang, D. Westerfeld, W. K. Liu, J. Fastenau, D. Lubyshev, “Effects of the Phonon Energy and Carrier Concentration on the Carrier Lifetime in LWIR and MWIR Type-2 SLS and MCT Materials for IR Photodetector Technology,” SPIE Defense, Security, and Sensing 2011, Orlando, FL, Apr 25 – 29, 2011, 8012-28.

D. Mohata, S. Mookerjea, A. Agrawal, Y. Li, T. Mayer, V. Narayanan, A. Liu, D. Loubychev, J. Fastenau, and S. Datta, “Experimental Staggered-Source and N+ Pocket-Doped Channel III–V Tunnel Field-Effect Transistors and Their Scalabilities,” Appl. Phys. Express 4, 024105 (2011).

V. Jain, E. Lobisser, A. Baraskar, B.J. Thibeault, M.J.W. Rodwell, Z. Griffith, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J.M. Fastenau, and W.K. Liu, “InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous fτ/fmax ~ 430/800 GHz,” IEEE Electron Dev. Letts. 32, 24 (2011).


2010 research papers

M. Radosavljevic, G. Dewey, J.M. Fastenau*, J. Kavalieros, R. Kotlyar, B. Chu-Kung, W. K. Liu*, D. Lubyshev*, M. Metz, K. Millard, N. Mukherjee, L. Pan, R. Pillarisetty, W. Rachmady, U. Shah, R. Chau, Intel Corporation, *IQE, Inc., "Non-Planar, Multi-Gate InGaAs Quantum Well Field Effect Transistors with High-K Gate Dielectric and Ultra-Scaled Gate-to-Drain/Gate-to-Source Separation for Low Power Logic Applications," 2010 International Electron Devices Meeting (IEDM), San Francisco, CA, December 6-8, 2010.

T.E. Kazior, J.R. LaRoche, D. Lubyshev, J.M. Fastenau, W.K. Liu, M. Urteaga, J. Bergman, M.J. Choe, K.J. Lee, T. Seong, M. Seo, A. Yen, M.T. Bulsara, E.A. Fitzgerald, D. Smith, D. Clark, R.F. Thompson, C. Drazek, E. Guiot, “High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate,” IEEE 2010 Compound Semiconductor Conference, Monterey, CA, Oct. 3–6, 2010 (1092), TH1C.

D. Lubyshev, J.M. Fastenau, Y. Wu, W.K. Liu, M.T. Bulsara, E.A. Fitzgerald, M. Urteaga, W. Ha, J. Bergman, M.J. Choe, B. Brar, W.E. Hoke, J.R. LaRoche, T.E. Kazior, D. Smith, D. Clark, R.F. Thompson, C. Drazek, N. Daval, L. Benaissa, and E. Augendre, “Molecular Beam Epitaxy Growth of High Mobility Compound Semiconductor Devices for Integration with Si CMOS,” IBM Materials Research Community Workshop on III-V Compound Semiconductors, Zurich, Switzerland, Sep. 20–21, 2010 (invited).

V. Jain, E. Lobisser, A. Baraskar, B. J. Thibeault, M. Rodwell, Z. Griffith, M. Urteaga, S. T. Bartsch, D. Loubychev, A. Snyder, Y. Wu, J. M. Fastenau, and W.K. Liu, "High Performance 110 nm InGaAs/InP DHBTs in Dry-etched in situ Refractory Emitter Contact Technology ,” 68th Device Research Conference, University of Notre Dame, IN, June 21-23, 2010, IV.A-2.

R. Martinez, S. Amirhaghi, M.J. Furlong, D. Loubychev, J. Fastenau, and A.W.K. Liu, “Epitaxy Ready 4” GaSb Substrates: Requirements for MBE Grown Type II Superlattice Infrared Detectors,” Proc. SPIE Vol. 7660, Defense, Security, and Sensing 2010, Orlando, FL, Apr 5 – 9, 2010, 7660-48 (invited). “Large-format dual-broadband QWIP focal plane array imaging interferometers,” Proc. SPIE Vol. 5074, Infrared Technology and Applications XXXVI, Eds. B.F. Andresen, G.F. Fulop, and P.R. Norton, (ISBN 9780819481245, SPIE, Washington, 2010), 76601K (invited).

D. Lubyshev, J.M. Fastenau, X. Gu, A.W.K. Liu, J. Prineas, E.J. Koerperick, J.T. Olesberg, E.M. Jackson, J.A. Nolde, C. Yi, E. H. Aifer, “MBE Growth of Sb-based Type-II Strained Layer Superlattice Structures on Multi wafer Production Reactor,” Proc. SPIE Vol. 5074, Infrared Technology and Applications XXXVI, Eds. B.F. Andresen, G.F. Fulop, and P.R. Norton, (ISBN 9780819481245, SPIE, Washington, 2010), 76601J (invited).

W.E. Hoke, T.D. Kennedy, J. LaRoche, A. Torabi, J. Bettencourt, P. Saledas, C.D. Lee, P.S. Lyman, T.E. Kazior, M.T. Bulsara, E.A. Fitzgerald, D. Lubyshev and W.K. Liu, “Molecular Beam Epitaxial Growth and Properties of GaAs Pseudomorphic High Electron Mobility Transistors on Silicon Composite Substrates,” J. Vac. Sci. Technol. B28, C3H1 (2010).

X. Gu, D. Lubyshev, J. Batzel, J.M. Fastenau, W.K. Liu, R. Pelzel, J.F. Magana, Q. Ma, and V.R. Rao, “Growth, Characterizations and Uniformity Analysis of 200 mm Wafer-scale SrTiO3/Si,” J. Vac. Sci. Technol. B28, C3A12 (2010).


2009 research papers

M. Radosavljevic, B. Chu-Kung, S. Corcoran, G. Dewey, M. K. Hudait, J. M. Fastenau*, J. Kavalieros, W. K. Liu*, D. Lubyshev*, M. Metz, K. Millard, N. Mukherjee, W. Rachmady, U. Shah, and Robert Chau, " Advanced High-K Gate Dielectric for High-Performance Short-Channel In0.7Ga0.3As Quantum Well Field Effect Transistors on Silicon Substrate for Low Power Logic Applications" 2009 International Electron Devices Meeting (IEDM), Baltimore, MD, December 7-9, 2009.

Y.Q. Wu*, M. Xu, R. Wang, O. Koybasi, and P.D. Ye, “Experimental Demonstration of 100nm Channel Length In0.53Ga0.47As-based Vertical Inter-band Tunnel Field Effect Transistors (TFETs) for Ultra Low-Power Logic and SRAM Applications,” 2009 International Electron Devices Meeting (IEDM), Baltimore, MD, December 7-9, 2009.

Y.Q. Wu*, M. Xu, R. Wang, O. Koybasi, and P.D. Ye, “High-performance Deep-submicron Inversion-mode InGaAs MOSFETs with Maximum Gm exceeding 1.1 mS/µm: New HBr Pretreatment and Channel Engineering,” 2009 International Electron Devices Meeting (IEDM), Baltimore, MD, December 7 9, 2009.

Y.Q. Wu*, R. Wang, T. Shen, J.J. Gu, and P.D. Ye, “First Experimental Demonstration of 100 nm Inversion-mode InGaAs FinFET through Damage-free Sidewall Etching,” 2009 International Electron Devices Meeting (IEDM), Baltimore, MD, December 7-9, 2009.