Research and development

2008 research papers

W.K. Liu, D. Lubyshev, J.M. Fastenau, Y. Wu, M.T. Bulsara and E.A. Fitzgerald, M. Urteaga, W. Ha, J. Bergman, B. Brar, W.E. Hoke, J.R. LaRoche, K.J. Herrick, T.E. Kazior, D. Clark, D. Smith, R.F. Thompson, C. Drazek, and N. Daval, “Monolithic Integration of InP-based Transistors on Si substrates using MBE”, 15th International Conference on Molecular Beam Epitaxy, Vancouver, Canada, August 3–8, 2008 (THA1.1, invited).

H.S. Djie, Y. Wang, B.S. Ooi, D.-N. Wang, J.C.M. Hwang, Y. Wu, X.-M. Fang, J.M. Fastenau, W.K. Liu, G.T. Dang, and W.H. Chang, “Quantum Dash Intermixing,” IEEE J. Selected Topics in Quantum Electron. 14, 1239 (2008).

B.S. Ooi, H.S. Djie, Y. Wang, C.-L. Tan, J.C.M. Hwang, X.-M. Fang, J.M. Fastenau, A.W.K. Liu, G.T. Dang, and W.H. Chang, “Quantum Dashes on InP Substrate for Broadband Emitter Applications,” IEEE J. Selected Topics in Quantum Electron. 14, 1230 (2008) invited.

W. Ha, M. Urteaga, J. Bergman, B. Brar, W.K. Liu, D. Lubyshev, J.M. Fastenau, Y. Wu, M.T. Bulsara, E.A. Fitzgerald, W.E. Hoke, J.R. LaRoche, K.J. Herrick, T.E. Kazior, D. Clark, D. Smith, R.F. Thompson, C. Drazek, and N. Daval, “Small-area InP DHBTs Grown on Patterned Lattice-engineered Silicon Substrates”, 66th Device Research Conference, Santa Barbara, CA, June 23–25, 2008 (IV.B-9).

D. Lubyshev, J. M. Fastenau, W.K. Liu, Y. Wu, M. T. Bulsara, E. A. Fitzgerald, and W. E. Hoke, “MBE Growth of M-HEMTs and M-HBTs on Ge and Ge-on-Insulator Substrates”, J. Vac. Sci. Technol. B, 26, 1115 (2008).

Y. Wang, H.S. Djie, V. Hongpinyo, C.-L. Tan, B.-S. Ooi, J. Hwang, X.-M. Fang, Y. Wu, J. Fastenau, A. Liu, G. Dang, W. Chang, “Epitaxial Growth of High Quality InAs/InGaAlAs Quantum Dash-in-well Structure on InP”, 20th InP and Related Materials Conference, Versailles, France, May 25–29, 2008 (WP8).

D. Lubyshev, J.M. Fastenau, Y. Wu, W.K. Liu, M. Urteaga, W. Ha, J. Bergman, B. Brar, M.T. Bulsara, E.A. Fitzgerald, W.E. Hoke, J.R. LaRoche, K.J. Herrick, and T.E. Kazior, “Direct Growth of InP-HBT Structures on Ge-on-Insulator/Si Substrates by MBE”, 20th InP and Related Materials Conference, Versailles, France, May 25–29, 2008 (MoB2.3). 

D Troy, A Eisenbach, P Cooke, A Pearce, G Clarke, I Davies, S Barne, "Integration and Qualification of a Second Site HBT Epitaxial Wafer Foundry", CS-Mantech, Chicago, April 2008

D. Lubyshev, J.M. Fastenau, W.K. Liu, “IQE’s Epiwafers Unite III-Vs and Silicon”, Compound Semiconductor Magazine, 14, April 2008 (p. 25).

K.J. Herrick, M. Urteaga, A.W.K. Liu, D.I. Loubychev, J.M. Fastenau, E. Fitzgerald, M. Bulsara, B. Brar, W. Ha, J. Bergman, T. Kazior, N. Daval, “Direct Growth of III-V Devices on Silicon”, 2008 MRS Spring Meeting, San Francisco, CA, March 24−28, 2008 (C2.1).

K.J. Herrick, E. Fitzgerald, A. Liu, B. Brar, M. Urteaga, M. Bulsara, D. Clark, and T. Kazior, “Direct Growth of Compound Semiconductors on Silicon”, 33rd Annual GOMACTech Conference, Las Vegas, NV, March 17 20, 2008 (9.2).

Y. Wang, H.S. Djie, B.S. Ooi, J.C.M. Hwang, X.-M. Fang, Y. Wu, J.M. Fastenau, W.K. Liu, G.T. Dang and W.H. Chang, "Monolithic InAs/InAlGaAs/InP Quantum-Dash-in-Well Extended Cavity Laser Fabricated By Postgrowth Intermixing", Laser Physics, 18, 400 (2008).