2005 research papers
Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu, "InGaAs/InP DHBTs with 120 nm collector having simultaneously high ft ,fmax > 450 GHz", IEEE Electron Device Letts. 26, 530 (2005).
S.V. Bandara, S.D. Gunapala, J.K. Liu, S.B. Rafol, C.J. Hill, D.Z.Y. Ting, J.M. Mumolo, T.Q. Trinh, J.M. Fastenau, and A.W.K. Liu, "Tuning and Tailoring of Broadband Quantum-well Infrared Photodetector Responsivity Spectrum", Appl. Phys. Letts. 86, 151104 (2005).
Z. Griffith, M. Dahlström, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu, "InGaAs/InP DHBTs for Increased Digital IC Bandwidth having a 391 GHz ft and 505 GHz fmax", IEEE Electron Device Letts. 26, 11 (2005).
J.M. Fastenau, D.I. Lubyshev, Y. Wu, C. Doss, and W.K. Liu, "Comparative Studies of the Epi-Readiness of 4" InP Substrates for MBE Growth", J. Vac. Sci. Technol. B, 23, (2005).
J.M. Fastenau, W.K. Liu, D. Lubyshev, X.-M. Fang, Y. Wu, and C. Doss, "Evaluation of 4" InP Substrates for Epi-Ready Production MBE Growth", International Conference on Compound Semiconductor Manufacturing Technology, New Orleans, LA, April 11-14, 2005, 4.5.
Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu, "InGaAs/InP DHBTs with 120 nm collector having simultaneously high ft, fmax > 450 GHz", IEEE Electron Device Letts. (2005).
W.K. Liu, J.M. Fastenau, D. Lubyshev, X.-M. Fang, Y. Wu, and C. Doss, "InP Substrate Evaluation for Epi-Ready MBE Growth", 17th International Conference on InP and Related Materials, Glasgow, Scotland, UK, May 8-12, 2005, TP-15.
Z. Griffith, M. Dahlström, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A.W.K. Liu, "In0.53G0.47aAs/InP Type-I DHBTs with 100 nm Collector and 491 GHz ft, 415 GHz fmax", 17th International Conference on InP and Related Materials, Glasgow, Scotland, UK, May 8-12, 2005, TuA-2.4.
Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A. Liu, "InGaAs/InP Type-I DHBTs Having 450 GHz ft and 490 GHz fmax with Ccb/Ic 0.38 ps/V", 63rd Device Research Conference, Santa Barbara, CA, June 20-22, 2005, VII.B-7.
H. S. Djie, D.-N. Wang, J. C. M. Hwang and B. S. Ooi, X.-M. Fang, Y. Wu, J. M. Fastenau, and W. K. Liu, "Emission wavelength trimming of self-assembled InGaAs/GaAs Quantum Dots with GaAs/AlGaAs superlattices by rapid thermal annealing", Symp. J: III-V Semiconductors for Microelectronic and Optoelectronic Applications, 3rd Intl. Conf. on Materials for Advanced Technologies (ICMAT) and 9th Intl. Conf. on Advanced Materials (IUMRS-ICAM), Singapore, July 3-8, 2005, J-3-OR5.
L. Blunt, J. Armstrong, & R. Blunt, "The use of advanced 3D surface metrology for the characterisation of epi-wafers and Si structures". Phys. Stat. Sol., C 2, No 4, 1251-1258 (2005).