1998 research papers
K. Bacher, W.K. Liu, Y. Wu, and T. Stewart, "Strain-compensated InGaAs/AlGaAsP Quantum Well Intersubband photodetectors for Mid-IR Wavelength", Photonics West International Symposium on Optoelectronics '98: Integrated Devices and Applications, San Jose, CA, January 24-30, 1998, S3, Proc. SPIE Vol. 3287, Photodetectors: Materials and Devices III, Ed. G.J. Brown, (SPIE, Washington, 1998) p.80.
S.Q. Murphy, S. Raymond, J.L. Hicks, J.E. Furneaux, K.J. Goldammer, W.K. Liu, M.B. Santos, and E. Watters, "Hopping Conductivity in InSb based 2D Electronic Systems at High Magnetic Fields", American Physical Society Meeting, Los Angeles, CA, March 16-22, 1998, G33.12.
W.K. Liu, K.J. Goldammer, and M.B. Santos, "Surface Segregation and Dopant Compensation in Si d-doped InSb and AlxIn1-xSb Grown by Molecular Beam Epitaxy", American Physical Society Meeting, Los Angeles, CA, March 16-22, 1998, Q23.06.
M.B. Johnson, S.C. Lindstrom, K.J. Goldammer, W.K. Liu, and M.B. Santos, "Atomic Force Microscopy Used to Improve the Mobility of InSb-based Quantum Wells", American Physical Society Meeting, Los Angeles, CA, March 16-22, 1998, X27.08.
K.J. Goldammer, W.K. Liu, G.A. Khodaparast, F.W. McKenna, and M.B. Santos, "High-Mobility InSb Quantum Wells Remotely-Doped with Si", American Physical Society Meeting, Los Angeles, CA, March 16-22, 1998, X27.09.
K. Bacher, W.K. Liu, Y. Wu, M. Micovic, D. Lubyshev, D.L. Miller, Y. Yun, J. Atherton, J. Chi, P. Ersland, M. Fukuda, A. Hansen, K. Lu, M. O'Keefe, P. Staecher, and X. Zhang, "Molecular Beam Epitaxy Grown Carbon-Doped Heterojunction Bipolar Transistors", International Conference on GaAs Manufacturing Technology, Seattle, WA, April 27-30, 1998.
K.J. Goldammer, W.K. Liu, G.A. Khodaparast, S.C. Lindstrom, M.B. Johnson, R.E. Doezema, and M.B. Santos, "Electrical Properties of InSb Quantum Wells Remotely Doped with Si", J. Vac. Sci. Technol. B, 16, 1367 (1998).
X.M. Fang, I-N. Chao, B.N. Strecker, P.J. McCann, S. Yuan, W.K. Liu, and M.B. Santos," MBE Growth of Bi2Se3- and Tl2Se-doped PbSe and PbEuSe on CaF2/Si(111)", J. Vac. Sci. Technol. B, 16, 1459 (1998).
W.K. Liu, K. Bacher, F.J. Towner, and T.R. Stewart, "MBE Growth and Characterization of C-doped LT-GaAs", 40th Electronic Materials Conference, Charlottesville, VA, June 24-26, 1998, A6.
W.K. Liu, K.J. Goldammer and M.B. Santos, "Surface Segregation and Compensation of Si in d-doped InSb and AlxIn1-xSb Grown by Molecular Beam Epitaxy", J. Appl. Phys. 84, 205 (1998).
K.J. Goldammer, N. Dai, J. Hicks, S.J. Chung, F. Brown, S. Raymond, W.K. Liu, R.E. Doezema, J.E. Furneaux, S.Q. Murphy, and M.B. Santos, "Two-Dimensional Electron Systems in InSb Quantum Wells", 11th Conference on Superlattice, Microstructures and Microdevices (Satellite Conference of the 24th International Conference on Physics of Semiconductors), Hurgada, Egypt, July 27-August 1, 1998.
D. Hartzell, L.K. Leung, and F.J. Towner, "Cost-effective, High-volume Molecular Beam Epitaxy", JOM, 50, 37 (1998).
K.J. Goldammer, S. J. Chung, W.K. Liu, and M.B. Santos, "High-mobility Electron Systems in Remotely-doped InSb Quantum Wells", 10th International Conference on Molecular Beam Epitaxy, Cannes, France, August 31-September 4, 1998, PT5.9.
A.W.K. Liu, K. Bacher, E.R. Weber, P. Specht, F.J. Towner, and T.R. Stewart, "Properties of C-Doped LT-GaAs Grown by MBE Using CBr4", 10th International Conference on Molecular Beam Epitaxy, Cannes, France, August 31-September 4, 1998, PT5.20.
P. Specht, R.C. Lutz, R. Zhao, M.J. Cich, O.H. Lam, E.R. Weber, W.K. Liu, K. Bacher, F.J. Towner, T.R. Stewart, and M. Luysberg, "Growth and Characterization of p-doped LT-GaAs", Symposium on Non-stoichiometric III-V Compounds, Erlangen, Germany, October 5-7, 1998.
P. Specht, W.K. Liu, K. Bacher, R.C. Lutz, R. Zhao, M. Luysberg, F.J. Towner, T.R. Stewart, and E.R. Weber, "Improvement of MBE-grown LT-GaAs through p-doping with Be and C", 17th North American Conference on Molecular Beam Epitaxy, College Station, PA, October 24-26, 1998, P.10.
A.W. Hanson, D. Danzilio, K. Bacher, and L. Leung, "A Selective Gate Recess Process Utilizing MBE-grown In0.5Ga0.5P Etch-stop Layers for GaAs-based FET Technologies", 20th Annual IEEE GaAs IC Symposium, Atlanta, GA, November 1-4, 1998, J.3.
K.K. Choi, K.L. Bacher, and Y. Wu, "Corrugated QWIP with Dielectric Coverage for Focal Plane Array Applications", 194th Meeting of the Electrochemical Society and 6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Boston, MA, November 1-6, 1998, N4-610.
M. Tidrow, X. Jiang, S. Li, and K. Bacher, "A Novel Four-Color Quantum Well Infrared Photodetector", 194th Meeting of the Electrochemical Society and 6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Boston, MA, November 1-6, 1998, N4-614.