In the News

19 Aug 2004

IQE, ROCKWELL AND UCSB IN HIGH SPEED TRANSISTOR VENTURE


As reported in CompoundSemiconductor.Net on 13th August, IQE's materials have been used in a joint venture with Rockwell and the University of California in Santa Barbara to produce a 152GHz InP-based transistor under DARPA's TFAST program.

The work is part of the US' Defense Advanced Research Project Agency (DARPA) funded program  "Technology for Frequency Agile digitally Synthesized Transmitters (TFAST)".

IQE produced the starting materials in the form of InP based epitaxial wafers, that provide the enabling technology from which the high speed components are made. The epiwafers were produced using the Company's MBE production equipment at its Bethlehem, PA manufacturing facility.

For the full article, visit the CompoundSemiconductor.Net website:

Contact:

Chris Meadows, IQE plc

+44 (0) 29 2083 9400