IQE begins shipping antimonide epitaxial wafers.

26 July 2005

IQE, Inc., Bethlehem, PA, US, has announced that it has begun shipping antimonide based epitaxial wafers, produced using the company's state-of-the-art, molecular beam epitaxy (MBE) platforms. IQE is aggressively pursuing a share of the growing antimonide market.

Antimonide (Sb) based compound semiconductors are emerging as key materials in a number of electronic and optoelectronic applications. Due to their unique band gap and lattice properties, Sb-based materials are particularly attractive for high-frequency, low noise, and low power-consumption electronic devices, as well as for long wavelength emitters and detectors. IQE is seeking to work together with an expanding base of key customers to further develop this market.

IQE has capability to grow a range of heterostructures by MBE using solid source valved Sb-crackers. The use of these systems enables the precise alloy and thickness control required to meet the stringent band gap engineering demands of the Sb-based structures. Integrating antimonide based alloys expands the capabilities of epiwafer structures on GaAs or InP substrates.
 

Wafer Technology Ltd, another IQE group company, is already firmly established as a leading manufacturer of antimonide substrates (GaSb and InSb) on which advanced epitaxial layers can be produced.

The epiwafer supply of custom-designed antimonide structures is available now and IQE's unparalleled experience in over 17 years of wafer outsourcing means that customers can be sure of a quality product with excellent uniformity and reproducibility.

Contacts:
 

Sales:

(Epiwafers) Lisa Rosenberg +1 866 473 7266

(Substrates) Mark Furlong +44 19 0821 0444

Media:
Chris Meadows +44 (0)2920 839400