IQE

IQE’s InP-DHBT Material Used To Achieve
World Record Results of 780GHz fmax.

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23 May 2007

At the Indium Phosphide and Related Materials (IPRM) Conference in Matsue, Japan last week, IQE announced that its InP-DHBT materials had been fabricated through the use of the Nanofabrication facility at the University of California at Santa Barbara (UCSB), to produce world record results of 780 GHz power-gain cut-off frequencies (fmax), simultaneous with 424 GHz current-gain cut-off frequencies f(t) for mesa HBTs. These devices employ a graded base-collector junction, where a record f(t) ? device breakdown BVceo (5.6V) = 2.39 THz*Volt is demonstrated as well.

Material for the InP-based double-heterojunction bipolar transistor (DHBT) device was produced at IQE’s Pennsylvania manufacturing facility on InP wafers using molecular beam epitaxy (MBE).

Steve Gergar, General Manager of IQE’s Pennsylvania operation commented, "IQE is very pleased to have contributed the epitaxial material upon which UCSB has achieved these exciting InP-DHBT high speed results. We have collaborated extensively with Professor Rodwell’s group for nearly a decade, where many record InP-DHBTs results have been demonstrated over the years. Additionally, we are particularly pleased with the success of these latest results as it shows how both sides have benefited immensely from the interaction. These results affirm IQE’s strength in advanced materials and structures, beyond the typical high quality SHBT and DHBTs we have in standard production. This also confirms our commitment to the R&D community, and we look forward to continued successful collaborations with UCSB and other research groups in the years to come."

Professor Mark Rodwell said: "We are pleased with the most recent results from UCSB. The continued success of InP device research requires continued advancements in material growth quality and techniques. These most recent DHBTs results affirm this and we gladly share this success with IQE."

This work is supported by the ONR (N0001-40-4-10071), the DARPA SWIFT program, and the DARPA TFAST program N66001-02-C-8080.

For further details, please refer to paper WeA3-2 presented by Dr. Zach Griffith (griffith@ece.ucsb.edu) at IPRM2007.

NOTE TO EDITORS

IQE is the leading global supplier of advanced semiconductor wafers with products that cover a diverse range of applications, supported by an innovative outsourced foundry services portfolio that allows the Group to provide a 'one stop shop' for the wafer needs of the world's leading semiconductor manufacturers.

IQE uses advanced crystal growth technology (epitaxy) to manufacture and supply bespoke semiconductor wafers ('epi-wafers') to the major chip manufacturing companies, who then use these wafers to make the chips which form the key components of virtually all high technology systems. IQE is unique in being able to supply wafers using all of the leading crystal growth technology platforms.

IQE's products are found in many leading-edge consumer, communication, computing and industrial applications, including a complete range of wafer products for the wireless industry, such as mobile handsets and wireless infrastructure, Wi-Fi, WiMAX, base stations, GPS, and satellite communications; optical communications, optical storage (CD, DVD), laser optical mouse, laser printers & photocopiers, thermal imagers, leading-edge medical products, barcode, high efficiency LEDs and a variety of advanced silicon based systems.

The manufacturers of these chips are increasingly seeking to source wafers from specialist foundries such as IQE in order to reduce overall wafer costs and accelerate time to market.

IQE also provides bespoke R&D services to deliver customised materials for specific applications and offers specialist technical staff to manufacture to specification either at its own facilities or on the customer's own sites. The Group is also able to leverage its global purchasing volumes to reduce the cost of raw materials. In this way IQE's supply services, provide compelling benefits in terms of flexibility and predictability of cost, thereby significantly reducing operating risk.

IQE operates six manufacturing facilities located in Cardiff (two) and Milton Keynes in the UK; in Bethlehem, Pennsylvania and Somerset, New Jersey in the USA; and Singapore. The Group also has 11 sales offices located in major economic centres worldwide.