IQE transfers cREO™ growth capability to its North Carolina facility and demonstrates interface charge tuning using cREO™ for GaN products

17 May 2016

Cardiff, 17 May, 2016: IQE plc (AIM:  IQE, “IQE” or the “Group”), the leading manufacturer of advanced semiconductor wafer products for the global semiconductor industry, announces two key developments at this year’s CS MANTECH conference.

Successful transfer of cREO™ growth technology to North Carolina facility

IQE has successfully transferred Translucent’s MBE equipment and associated process to its North Carolina facility.

Following the exclusive license of cREO™ Technology from Translucent in September 2015, IQE has successfully transferred two of Translucent’s reactors to its facility in Greensboro, North Carolina. The first of these systems (production tool) has been installed and is now producing cREO™ templates on Si.  The template structural and morphological characteristics are an excellent match to previously achieved results by Translucent.  The second (R&D) tool is due to be online in approximately 1 month.

The production tool will produce standard templates for the IQE group and select partners, with initial focus on III-N materials.

Demonstration of interface charge tuning using cREO™ for GaN products

Using cREO™ templates IQE has demonstrated that it is able to tune the interfacial characteristics for GaN on Si. For RF applications, GaN on Si typically exhibits an undesirable p-type channel at the GaN / Si interface (AKA parasitic channel) that detrimentally affects RF efficiency.

Using its patented technology, IQE has demonstrated that the parasitic channel can be completely eliminated.In addition, IQE has shown that growth conditions can be tuned to generate and rationally engineer an n-type layer between the GaN and Si.  This enables applications that require buried conductors for III-N on Si applications.

 

Dr. Rodney Pelzel, VP, IQE Group Technology commented:

“We are delighted to announce the transfer of the cREO™ process to our North Carolina facility.  Materials produced on the newly installed tools clearly demonstrate the successful transfer of the technology.

“We have demonstrated that we are able to rationally manipulate the cREO™ characteristics to tune the conductivity of the III-N / Si interface.  This is a significant enabler for GaN HEMT technology on Si for RF applications.  In addition, it is an enabler for other III-N technology on Si such as RF filter technology.

“IQE is committed to fully exploiting cREO™ technology for GaN as well as other III-V and group IV materials.  This technology offers exciting opportunities for fully realizing III-V growth on Si thereby eliminating the cost-prohibitive issue with native substrates such as InP.  Furthermore, it enables heterointegration at the epi-level allowing previously incompatible materials systems to be successfully combined.  cREO™ is an excellent complement to IQE’s well-established wireless, photonics, power, and CMOS products and will enable novel solutions for our customers.”

IQE is attending and exhibiting at CS MANTECH 2016 conference, 16th to 18th May.

 

Contacts

IQE

IQE plc, UK +44 (0) 29 2083 9400

Chris Meadows (Press/investors)

 

IQE USA +1 508 824 6696

Rodney Pelzel (Technical)