IQE wins prestigious CS International Award for its 150mm GaN on SiC technology
21 March 2014
Cardiff, UK, 21 March 2014: IQE plc (AIM: IQE; “IQE”, “the Group”) was announced as winner of the prestigious CS International Materials Award for its 150mm Gallium Nitride on Silicon Carbide HEMT technology, which was launched during 2013 in conjunction with II-VI Inc.
GaN power amplifiers offer superior power capability, efficiency, bandwidth and linearity compared with all other existing technologies commonly used for high power applications, providing significant benefits in terms of both higher performance and lower overall system costs. High power applications include RF base stations, radar, point to point RF and CATV.
GaN-based low-noise amplifiers exhibit improved robustness, noise figure and dynamic range when compared to incumbent solutions. In addition, GaN-based transistors can operate at high temperatures, thus reducing system cost, size and weight. As a result, GaN transistors are now established as a leading new technology for a wide range of defence applications, and are currently being introduced into a range of commercial applications by leading RF companies..
The introduction IQE’s of 150mm GaN HEMT epi wafer products enables significant cost reduction, by using existing RF 150mm production capacity with associated yield and throughput benefits.
CS-International is the Compound Semiconductor Industry's premier annual event, attracting almost 300 senior executives and technology experts from around the world. The shortlist for the award included Kyma Technologies, Rubicon Technology Inc, and Semi-Gas Systems.
The Award was presented to IQE President and CEO, Dr Drew Nelson during the annual CS International Conference held this week in Frankfurt, Germany.
Chris Meadows +44 (0)29 2083 9400