IQE to present joint paper with Penn State University and NIST at the IEDM conference in Washington, DC
09 December 2013
Cardiff, UK, 9 December 2013 - IQE plc (AIM: IQE, “IQE”), Pennsylavania State University and NIST will present a joint paper on recent key developments in compound semiconductor device technologies for high speed and low voltage/low power applications at the International Electron Devices Meeting (IEDM) to be held in Washington, DC from 9 to 11 December.
The paper; "Demonstration of InGaAs/GaAsSb Near Broken-gap Tunnel FET with Ion=740µA/µm, GM=700µS/µm and Gigahertz Switching Performance at VDS=0.5V" will be presented at the prestigious IEDM conference, which addresses key topics affecting future semiconductor technologies and is attended by a global audience including representatives from all the major chip producers worldwide.
The presentation will report on research leading to the demonstration of near broken-gap tunnel field effect transistors (NBTFETs) with a 200nm channel length that exhibited record drive current (ION) of 740µA/µm, intrinsic RF transconductance (GM) of 700µS/µm and a cut-off frequency (FT) of 19GHz at a source-drain voltage (VDS) of 0.5V.
The work demonstrates the potential use of InGaAs/GaAsSb based FET technology to produce high performance devices that operate at very low voltages, offering the low power consumption and high efficiencies needed for the next generation of electronics and communications devices with the ability to operate in highly energy constrained environments for a wide range of applications that will enable the Internet of Things.
Established in 1955, the IEDM is the world's premier forum for reporting breakthroughs in technology, design, manufacturing, physics and the modelling of semiconductors and other electronic devices. Proceedings of the conference are published by the IEEE.
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NOTE TO EDITORS
IQE is the leading global supplier of advanced semiconductor wafers with products that cover a diverse range of applications, supported by an innovative outsourced foundry services portfolio that allows the Group to provide a 'one stop shop' for the wafer needs of the world's leading semiconductor manufacturers.
IQE uses advanced crystal growth technology (epitaxy) to manufacture and supply bespoke semiconductor wafers ('epiwafers') to the major chip manufacturing companies, who then use these wafers to make the chips which form the key components of virtually all high technology systems. IQE is unique in being able to supply wafers using all of the leading crystal growth technology platforms.
IQE's products are found in many leading-edge consumer, communication, computing and industrial applications, including a complete range of wafer products for the wireless industry, such as mobile handsets and wireless infrastructure, Wi-Fi, WiMAX, base stations, GPS, and satellite communications; and optical communications.
The Group also manufactures advanced optoelectronic and photonic components such as semiconductor lasers, vertical cavity surface emitting lasers (VCSELs) and optical sensors for a wide range of applications including optical fibre communications, optical storage (CD, DVD, BluRay), thermal imaging, leading-edge medical products, pico-projection, finger navigation ultra-high brightness LEDs, and high efficiency concentrated photovoltaic (CPV) solar cells.
The manufacturers of these chips are increasingly seeking to outsource wafer production to specialist foundries such as IQE in order to reduce overall wafer costs and accelerate time to market.
IQE also provides bespoke R&D services to deliver customised materials for specific applications and offers specialist technical staff to manufacture to specification either at its own facilities or on the customer's own sites. The Group is also able to leverage its global purchasing volumes to reduce the cost of raw materials. In this way, IQE's outsourced services, provide compelling benefits in terms of flexibility and predictability of cost, thereby significantly reducing operating risk.
IQE operates a number of manufacturing and R&D facilities across Europe, Asia and the USA. The Group also delivers its products and services through regional sales offices located in major economic centres worldwide.
ABOUT PENN STATE UNIVERSITY
Penn State University was founded in 1855 with engineering studies being introduced in 1882. The university rapidly became one of the ten largest undergraduate engineering schools in the US.
The Department of Electrical Engineering at Penn State University is a nationally recognized program with thirty six tenured/tenure track faculty members, with annual research expenditures of approximately $10 million. NSF ranks PSU-EE at University Park 3rd nationally in total science and engineering research expenditures. The department has major thrusts in communications and networking, control systems, electromagnetics, electronic materials and devices, optical materials and devices, power systems, remote sensing and space sciences, and signal and image processing. The Materials Research Institute at Penn State University) is an interdisciplinary organization for engaging strategic research at the cross-section of education, science, and innovation. MRI supports research activities that span the physical, engineering, and life sciences, and draw upon the expertise of a diverse faculty in departments across the campus. MRI exemplifies an entrepreneurial and collaborative faculty culture, maintained core facilities with technical staff and state-of-the-art equipment and three buildings dedicated to interdisciplinary materials research that spans over 5 Colleges, 15 Departments, and involves 200+ Faculty, 100 Researchers and 800+ Graduate Students.