08 December 2010

Cardiff, 08 December 2010: Intel Corporation and IQE this week presented a joint paper on the development of InGaAs Quantum Well Field Effect Transistors (QWFETs) for low power logic applications. The paper was presented by Dr. Marko Radosavljevic from Intel Corporation at the International Electron Devices Meeting (IEDM) held in San Francisco, CA. The paper detailed work carried out by scientists at Intel’s Technology and Manufacturing Group in Oregon and IQE’s epitaxial growth facility in Bethlehem, Pennsylvania.

The paper, entitled: “Non-Planar, Multi-Gate InGaAs Quantum Well Field Effect Transistors with High-K Gate Dielectric and Ultra-Scaled Gate-to-Drain/Gate-to-Source Separation for Low Power Logic Applications,” reports for the first time, the results of work on InGaAs QWFETs with high-K gate dielectric and ultra-scaled gate-to-drain and gate-to-source separations (LSIDE) of 5nm.

The QWFET devices fabricated by Intel using epitaxial wafers produced by IQE, show improved enhancement-mode threshold voltage (VT) and significantly improved electrostatics. The results of this work demonstrate that non-planar, multi-gate device architecture is an effective way to improve the scalability of III-V QWFETs for low power logic applications.

The IEDM has for almost sixty years been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modelling of semiconductors and other electronic devices. Proceedings of the conference will be published by the IEEE.


Contacts:

Technical/Sales: IQE Inc (+1 610 972 1488)
Chris Meadows

Press/Investors: IQE plc (+44 29 2083 9400)
Chris Meadows 

  

Note to Editors

ABOUT IQE (www.iqep.com)
IQE is the leading global supplier of advanced semiconductor wafers with products that cover a diverse range of applications, supported by an innovative outsourced foundry services portfolio that allows the Group to provide a 'one stop shop' for the wafer needs of the world's leading semiconductor manufacturers.

IQE uses advanced crystal growth technology (epitaxy) to manufacture and supply bespoke semiconductor wafers ('epi-wafers') to the major chip manufacturing companies, who then use these wafers to make the chips which form the key components of virtually all high technology systems. IQE is unique in being able to supply wafers using all of the leading crystal growth technology platforms.

IQE's products are found in many leading-edge consumer, communication, computing and industrial applications, including a complete range of wafer products for the wireless industry, such as mobile handsets and wireless infrastructure, Wi-Fi, WiMAX, base stations, GPS, and satellite communications; optical communications, optical storage (CD, DVD), laser optical mouse, laser printers & photocopiers, thermal imagers, leading-edge medical products, barcode, ultra high brightness LEDs, a variety of advanced silicon based systems and high efficiency concentrator photovoltaic (CPV) solar cells.

The manufacturers of these chips are increasingly seeking to outsource wafer production to specialist foundries such as IQE in order to reduce overall wafer costs and accelerate time to market.

IQE also provides bespoke R&D services to deliver customised materials for specific applications and offers specialist technical staff to manufacture to specification either at its own facilities or on the customer's own sites. The Group is also able to leverage its global purchasing volumes to reduce the cost of raw materials. In this way IQE's outsourced services, provide compelling benefits in terms of flexibility and predictability of cost, thereby significantly reducing operating risk.

IQE comprises eight operating facilities located in Cardiff (two), Milton Keynes and Bath in the UK; in Bethlehem, Pennsylvania, Somerset, New Jersey and Spokane, Washington in the USA; and Singapore. The Group also has 11 sales offices located in major economic centres worldwide.