Publications

Publications

  • R. Bijesh, H. Liu, H. Madan, D. Mohata, W. Li, N.V. Nguyen, D. Gundlach, C.A. Richter, J. Maier, K. Wang, T. Clarke, J.M. Fastenau, D. Loubychev, W.K. Liu, V. Narayanan, S. Datta

    “Demonstration of In0.9Ga0.1As/GaAs0.18Sb0.82 Near Broken-gap Tunnel FET with ION=740μA/μm, GM=70μS/μm and Gigahertz Switching Performance at VDs=0.5V”

    IEEE International Electron Device Meeting, Washington, DC, Dec 9 11, (28.2); Technical Digest IEDM (doi: 10.1109/IEDM.2013.6724708) p. 28.2.1. (2013)
  • H.W. Then, S. Dasgupta, M. Radosavljevic, L. Chow, B. Chu-Kung, G. Dewey, S. Gardner, X. Gao, J. Kavalieros, N. Mukherjee, M. Metz, M. Oliver, R. Pillarisetty, V. Rao, S.H. Sung, G. Yang, and R. Chau

    “Experimental Observation and Physics of “Negative” Capacitance and Steeper than 40mV/Decade Subthreshold Swing in Al0.83In 0.17N/AlN/GaN MOS-HEMT on SiC Substrate”

    IEEE International Electron Device Meeting, Washington, DC, Dec 9-11, (28.3); Technical Digest 2013 IEDM (doi: 10.1109/IEDM.2013.6724709). p. 28.3.1. (2013)
  • A.Y. Liu, C. Zhang, A. Snyder, D. Loubychev, J.M. Fastenau, A.W.K. Liu, A. C. Gossard, and J.E. Bowers

    “InAs Quantum Dot Ridge Lasers on Silicon”

    30th North American Conference on Molecular Beam Epitaxy, Banff, Alberta, Canada, Oct 5-9, (S1.2). (2013)
  • D. Lubyshev, J.M. Fastenau, Y. Qiu, Y. Wu, and A.W.K. Liu

    “MBE Growth of Short-infrared nBn Photodetectors Based on GaSb/InPSb/AlGaAsSb Material Systems”

    30th North American Conference on Molecular Beam Epitaxy, Banff, Alberta, Canada, Oct 5-9 (Tu3.5). (2013)
  • D. Lubyshev, J.M. Fastenau, Y. Wu, and A.W.K. Liu

    “MBE Growth of InP-based FET & HBT Structures on Si”

    2013 European Materials Research Society Fall Meeting (E-MRS), Warsaw, Poland, September 16-20 (A3-1) invited. (2013)
  • M. Barth, A. Agrawal, A. Ali, J. Fastenau, D. Loubychev, W.K. Liu, and S.Datta

    “Compressively Strained InSb MOSFETs with High Hole Mobility for P-Channel Application”

    70th Device Research Conference, University of Notre Dame, Notre Dame, IN, June 23-26, 2013, II.A-6; Digest 2013 DRC (ISSN: 1548-3770, E ISBN: 978-1-4799-0811-0, IEEE, New Jersey), p. 21. (2013)
  • M.J. Furlong, R. Martinez, S. Amirhaghi, D. Small, B. Smith, A. Mowbray, D. Lubyshev, J.M. Fastenau, Y. Qiu, and A.W.K. Liu

    “Multiwafer Production of Epitaxy-ready 4" GaSb: Substrate Performance Assessments Pre- and Post-epitaxial Growth”

    Proc. SPIE 8704, Infrared Technology and Applications XXXIX, Eds. B.F. Andresen, G.F. Fulop, C.M. Hanson, P.R. Norton, and P. Robert, 870411 (June 11), doi: 10.1117/12.2016681. (2013)
  • D. Lubyshev, J.M. Fastenau, Y. Qiu, A.W.K. Liu, E.J. Koerperick, J.T. Olesberg, D. Norton, N.N. Faleev, C.B. Honsberg

    “MBE Growth of Sb-based nBn Photodetectors on Large Diameter GaAs Substrates”

    Proc. SPIE 8704, Infrared Technology and Applications XXXIX, Eds. B.F. Andresen, G.F. Fulop, C.M. Hanson, P.R. Norton, and P. Robert, 870412 (June 11), doi: 10.1117/12.2016681. (2013)
  • A.W.K. Liu

    “Direct Heteroepitaxy for Monolithic III-V on Si Integration”

    Nanoelectronics and Nanophotonics Workshop, Hong Kong University of Science and Technology, Hong Kong, May 27-29 (invited). (2013)
  • M.J. Furlong, R. Martinez, S. Amirhaghi, D. Small, B. Smith, A. Mowbray, D. Lubyshev, J.M. Fastenau, Y. Qiu, and A.W.K. Liu

    “Multiwafer Production of Epitaxy-ready 4" GaSb: Substrate Performance Assessments Pre and Post-epitaxial Growth”

    SPIE Defense, Security & Sensing Conference, Baltimore, MD, Apr 29 May 27, (8704-36). (2013)
  • D. Lubyshev, J.M. Fastenau, Y. Qiu, and A.W.K. Liu

    “MBE Growth of Sb-based nBn Photodetectors on Large Diameter GaAs Substrates”

    SPIE Defense, Security & Sensing Conference, Baltimore, MD, Apr 29-May 27 (8704-37). (2013)
  • H. Liu, Y. Zhang, S. L. Chuang, R. Dupuis, and A. Liu

    “Micro-Raman Study of InAs/GaSb Superlattices from Front and Cleaved Edge”

    American Physical Society March Meeting, Baltimore, MD, March 18-22, W23.0002; Bulletin of the American Physical Society 58(1). (2013)
  • Y. Zhu, N. Jain, D.K. Mohata, S. Datta, D. Lubyshev, J. M. Fastenau, A.W.K. Liu, and M.K. Hudait

    “Band Offset Determination of Mixed As/Sb Type-II Staggered Gap Heterostructure for N-Channel Tunnel Field Effect Transistor Application”

    J. Appl. Phys. 113, 024319. (2013)
  • J.M. Fastenau, D. Lubyshev, Y. Qiu, A.W.K. Liu, E.J. Koerperick, J.T. Olesberg, and D. Norton, Jr

    “MBE Growth of GaSb-based Photodetectors on 6 inch Diameter GaAs Substrates via Select Buffers”

    J. Vac. Sci. and Technol. B31, 03C106-1. (2013)
  • E. Lobisser, J.C. Rode, V. Jain, H.-W. Chiang, A. Baraskar, W.J. Mitchell, B.J. Thibeault, M.J.W. Rodwell, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J.M. Fastenau, and A.W.K. Liu

    “InGaAs/InP DHBTs with Emitter and Base Defined through Electron-Beam Lithography for Reduced Ccb and Increased RF Cut-off Frequency”

    Phys. Status Solidi C, 10, 769 (2013)
  • J.M. Fastenau D. Lubyshev, Y. Qiu, A.W.K. Liu, E.J. Koerperick, J.T. Olesberg, and D. Norton, Jr

    “Sb-based IR Photodetector Epiwafers on 100 mm GaSb Substrates Manufactured by MBE”

    Infrared Phys. Technol. 59,158 (2013)