Publications

Publications

  • E. Lobisser, J.C. Rode, V. Jain, H.-W. Chiang, A. Baraskar, W.J. Mitchell, B.J. Thibeault, M.J.W. Rodwell, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J.M. Fastenau, and A.W.K. Liu

    “InGaAs/InP DHBTs with Emitter and Base Defined through Electron-Beam Lithography for Reduced Ccb and Increased RF Cut-off Frequency”

    24th InP and Related Materials Conference, Santa Barbara, CA, Aug 27–30, Th-1C.2. (2012)
  • E.H. Steenbergen, B.C. Connelly, G.D. Metcale, P.H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J.M. Fastenau, A.W.K. Liu, S. Elhamri, O.O. Cellek, and Y. -H. Zhang

    "Study of the Minority Carrier Lifetime in Mid Wavelength Infrared InAs/InAs1-xSbx Type-II Superlattices"

    SPIE Optics + Photonics Conference, San Diego, CA, August 12/16, (8512-20). (2012)
  • Yuanzheng Yue, Zongyang Hu, Jia Guo, Berardi Sensale-Rodriguez, Guowang Li, Ronghua Wang, Faiza Faria, Tian Fang, Bo Song, Xiang Gao, Shiping Guo, Thomas Kosel, Gregory Snider, Patrick Fay, Debdeep Jena, and Huili Xing

    "InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and fT of 370 GHz"

    IEEE Electron Device Letters, 7 June. (2012)
  • A.W.K. Liu, D. Lubyshev, Y. Qiu, J.M. Fastenau, E.J. Koerperick, J.T. Olesberg, and D. Norton, Jr.

    “Production MBE Growth of Sb-based IR Detector Materials on Large Diameter Substrates”

    Quantum Structured Infrared Photodetector Intl. Conf. (QSIP), Cargèse, Corsica, France, June 17–22, Th-2a. (2012)
  • D.K. Mohata, B. Rajamohanan, Y. Zhu, M.K. Hudait, R. Southwick, Z. Chbili, D. Gundlach, J. Suehle, J.M. Fastenau, D. Loubychev, A. Liu, T.S. Mayer, V. Narayanan, and S. Datta

    “Demonstration of Improved Heteroepitaxy, Scaled Gate Stack and Reduced Interface States Enabling Heterojunction Tunnel FETs with High Drive Current and High On-Off Ratio”

    IEEE Symposium on VLSI Technology, Honolulu, HI, June 12/14 (6.5). (2012)
  • L.P. Allen, J.P. Flint, G. Meshew, G. Dallas, D. Bakken, J. Trevethan, D. Lubyshev, Y. Qiu, J.M. Fastenau, and A.W.K. Liu

    “100mm GaSb Substrate Flatness for IRFPA Epi Growth”

    SPIE Defense, Security & Sensing Conference, Baltimore, MD, April 22/27 (8353-56); Proc. SPIE Vol. 8353, Infrared Technology and Applications XXXVIII, Eds. B.F. Andresen, G.F. Fulop, and P.R. Norton, (doi: 10.1117/12.919287, SPIE, Bellingham, WA 2012), 835313-1. (2012)
  • E.H. Steenbergen, O. Cellek, Y-H Zhang, D. Lubyshev, Y. Qiu, J.M. Fastenau, and A.W.K. Liu

    “Valence band Offset Study for InAs/InAsSb Superlattice Infrared Detectors”

    SPIE Photonics West 2012, San Francisco, CA, Jan 21 62 (8268-19); Proc. SPIE Vol. 8268, Quantum Sensing and Nanophotonic Devices IX, Eds. M. Razeghi, E. Tournie and G.J. Brown, (doi: 10.1117/12.909614, SPIE, Bellingham, WA), 82680K-1. (2012)
  • D. Lubyshev, Y. Qiu, J.M. Fastenau, A.W.K. Liu, E.J. Koerperick, J.T. Olesberg, and D. Norton, Jr.

    “Manufacturable MBE Growth Process for Sb-based Superlattices on Large-diameter Substrates”

    SPIE Photonics West 2012, San Francisco, CA, Jan 21-26, 2012 (8268-45, invited); Proc. SPIE Vol. 8268, Quantum Sensing and Nanophotonic Devices IX, Eds. M. Razeghi, E. Tournie and G.J. Brown, (doi: 10.1117/12.909571, SPIE, Bellingham, WA 2012), 82681A-1 (2012)
  • L. P. Allen; J. P. Flint; G. Meshew; J. Trevethan; M. J. Furlong; B. Martinez; A. Mobray

    "Surface chemistry improvement of 100mm GaSb for advanced space based applications"

    Quantum Sensing and Nanophotonic Devices IX, Manijeh Razeghi; Eric Tournie; Gail J. Brown, Editors, 826819, 20 January. (2012)
  • E.H. Steenbergen, B.C. Connelly, G.D. Metcale, P.H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J.M. Fastenau, A.W.K. Liu, S. Elhamri, O.O. Cellek, and Y. -H. Zhang

    “One giant leap for IR technology”

    Compound Semiconductor Magazine, 18, Jan/Feb (p. 25). (2012)
  • Steenbergen, Elizabeth H.; Cellek, Oray O.; Lubyshev, Dmitri; Qiu, Yueming; Fastenau, Joel M.; Liu, Amy W. K.; Zhang, Yong-Hang

    "Study of the valence band offsets between InAs and InAs1-xSbx alloys"

    Quantum Sensing and Nanophotonic Devices IX. Edited by Razeghi, Manijeh; Tournie, Eric; Brown, Gail J. Proceedings of the SPIE, Volume 8268, pp. 82681A-82681A-10. (2012)
  • "Multiwafer production of epitaxy ready 4” GaSb substrates: requirements for epitaxially grown infrared detectors"

    SPIE Photonics West, January. (2012)
  • L. P. Allen, J. P. Flint, G. Meshewm J. Trevethan, G. Dallas, A. Khoshakhlagh, C. J. Hill

    "Manufacturing of 100mm diameter GaSb substrates for advanced space based applications"

    SPIE Photonics West, January. (2012)
  • Lubyshev, Dmitri; Qiu, Yueming; Fastenau, Joel M.; Liu, Amy W. K.; Koerperick, Edwin J.; Olesberg, Jon T.; Norton, Dennis, Jr

    "Manufacturable MBE growth process for Sb-based photodetector materials on large diameter substrates"

    Quantum Sensing and Nanophotonic Devices IX. Edited by Razeghi, Manijeh; Tournie, Eric; Brown, Gail J. Proceedings of the SPIE, Volume 8268, pp. 82681A-82681A-10. (2012)
  • Z. Tian, R.T. Hinkey, R.Q. Yang, D. Lubyshev, Y. Qiu, J.M. Fastenau, W.K. Liu, and M.B. Johnson.

    “Interband Cascade Infrared Photodetectors with Enhanced Electron Barriers and P-type Superlattice Absorbers”

    J. Appl. Phys. 111, 024510. (2012)
  • Y. Zhu, N. Jain, S. Vijayaraghavan, D.K. Mohata, S. Datta, D. Lubyshev, J.M. Fastenau, W.K. Liu, N. Monsegue, and M.K. Hudait

    “Role of InAs and GaAs Terminated Heterointerfaces at Source/Channel on the Mixed As-Sb Staggered Gap Tunnel Field Effect Transistor Structures Grown by Molecular Beam Epitaxy”

    J. Appl. Phys. 112, 024306. (2012)
  • E. H. Steenbergen, BC. Connelly, G. D. Metcalfe, H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J.M. Fastenau, A.W.K. Liu, S. Elhamri, O.O. Cellek, and Y.-H. Zhang

    “Temperature-dependent minority carrier lifetimes of InAs/InAs1-xSbx type-II Superlattices”

    Proc. SPIE Vol. 8512, Infrared Sensors, Devices, and Applications II, Eds. P.D. LeVan; A.K. Sood; P.S. Wijewarnasuriya; A.I. D'Souza, (ISBN 9780819492296, SPIE, Bellingham, WA). (2012)
  • D. Mohata, B. Rajamohanan, T. Mayer, V. Narayanan, J. Fastenau, D. Lubyshev, A.W.K. Liu, and S. Datta

    “Barrier Engineered Arsenide-Antimonide Hetero-junction Tunnel FETs with Enhanced Drive Current”

    IEEE Electron Dev. Letts., DOI: 10.1109/LED.2012.2213333 (2012)
  • Y. Zhu, N. Jain, D.K. Mohata, S. Datta, D. Lubyshev, J. M. Fastenau, A.W.K. Liu, and M.K. Hudait

    “Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure”

    Appl. Phys. Letters., 101, 112106. (2012)