Publications

Publications

  • M. Radosavljevic, G. Dewey, J.M. Fastenau*, J. Kavalieros, R. Kotlyar, B. Chu-Kung, W. K. Liu*, D. Lubyshev*, M. Metz, K. Millard, N. Mukherjee, L. Pan, R. Pillarisetty, W. Rachmady, U. Shah, R. Chau, Intel Corporation, *IQE, Inc.

    "Non-Planar, Multi-Gate InGaAs Quantum Well Field Effect Transistors with High-K Gate Dielectric and Ultra-Scaled Gate-to-Drain/Gate-to-Source Separation for Low Power Logic Applications"

    2010 International Electron Devices Meeting (IEDM), San Francisco, CA, December 6-8. (2010)
  • T.E. Kazior, J.R. LaRoche, D. Lubyshev, J.M. Fastenau, W.K. Liu, M. Urteaga, J. Bergman, M.J. Choe, K.J. Lee, T. Seong, M. Seo, A. Yen, M.T. Bulsara, E.A. Fitzgerald, D. Smith, D. Clark, R.F. Thompson, C. Drazek, E. Guiot

    “High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate”

    IEEE 2010 Compound Semiconductor Conference, Monterey, CA, Oct. 3–6 (1092), TH1C. (2010)
  • D. Lubyshev, J.M. Fastenau, Y. Wu, W.K. Liu, M.T. Bulsara, E.A. Fitzgerald, M. Urteaga, W. Ha, J. Bergman, M.J. Choe, B. Brar, W.E. Hoke, J.R. LaRoche, T.E. Kazior, D. Smith, D. Clark, R.F. Thompson, C. Drazek, N. Daval, L. Benaissa, and E. Augendre

    “Molecular Beam Epitaxy Growth of High Mobility Compound Semiconductor Devices for Integration with Si CMOS"

    IBM Materials Research Community Workshop on III-V Compound Semiconductors, Zurich, Switzerland, Sep. 20–21 (invited). (2010)
  • V. Jain, E. Lobisser, A. Baraskar, B. J. Thibeault, M. Rodwell, Z. Griffith, M. Urteaga, S. T. Bartsch, D. Loubychev, A. Snyder, Y. Wu, J. M. Fastenau, and W.K. Liu

    "High Performance 110 nm InGaAs/InP DHBTs in Dry-etched in situ Refractory Emitter Contact Technology”

    68th Device Research Conference, University of Notre Dame, IN, June 21-23, 2010, IV.A-2. (2010)
  • R. Martinez, S. Amirhaghi, M.J. Furlong, D. Loubychev, J. Fastenau, and A.W.K. Liu

    “Epitaxy Ready 4” GaSb Substrates: Requirements for MBE Grown Type II Superlattice Infrared Detectors”

    Proc. SPIE Vol. 7660, Defense, Security, and Sensing 2010, Orlando, FL, Apr 5 – 9, 2010, 7660-48 (invited). (2010)
  • X. Gu, D. Lubyshev, J. Batzel, J.M. Fastenau, W.K. Liu, R. Pelzel, J.F. Magana, Q. Ma, and V.R. Rao

    “Growth, Characterizations and Uniformity Analysis of 200 mm Wafer-scale SrTiO3/Si,”

    J. Vac. Sci. Technol. B28, C3A12 (2010)
  • W.E. Hoke, T.D. Kennedy, J. LaRoche, A. Torabi, J. Bettencourt, P. Saledas, C.D. Lee, P.S. Lyman, T.E. Kazior, M.T. Bulsara, E.A. Fitzgerald, D. Lubyshev and W.K. Liu

    “Molecular Beam Epitaxial Growth and Properties of GaAs Pseudomorphic High Electron Mobility Transistors on Silicon Composite Substrates,”

    J. Vac. Sci. Technol. B28, C3H1 (2010)
  • “MBE Growth of Sb-based Type-II Strained Layer Superlattice Structures on Multi wafer Production Reactor,”

    Proc. SPIE Vol. 5074, Infrared Technology and Applications XXXVI, Eds. , (ISBN 9780819481245, SPIE, Washington, 2010), 76601J (invited). (2010)
  • R. Martinez, S. Amirhaghi, M.J. Furlong, D. Loubychev, J. Fastenau, and A.W.K. Liu

    “Large-format dual-broadband QWIP focal plane array imaging interferometers”

    Proc. SPIE Vol. 5074, Infrared Technology and Applications XXXVI, Eds. B.F. Andresen, G.F. Fulop, and P.R. Norton, (ISBN 9780819481245, SPIE, Washington, 2010), 76601K (invited). (2010)
  • X. Gu, D. Lubyshev, J. Batzel, J.M. Fastenau, W.K. Liu, R. Pelzel, J.F. Magana, Q. Ma, and V.R. Rao

    “Growth, Characterizations and Uniformity Analysis of 200 mm Wafer-scale SrTiO3/Si”

    J. Vac. Sci. Technol. B28, C3A12 (2010)
  • W.E. Hoke, T.D. Kennedy, J. LaRoche, A. Torabi, J. Bettencourt, P. Saledas, C.D. Lee, P.S. Lyman, T.E. Kazior, M.T. Bulsara, E.A. Fitzgerald, D. Lubyshev and W.K. Liu

    “Molecular Beam Epitaxial Growth and Properties of GaAs Pseudomorphic High Electron Mobility Transistors on Silicon Composite Substrates”

    J. Vac. Sci. Technol. B28, C3H1 (2010)