Publications

Publications

  • H. S. Djie, D.-N. Wang, J. C. M. Hwang and B. S. Ooi, X.-M. Fang, Y. Wu, J. M. Fastenau, and W. K. Liu

    "Emission wavelength trimming of self-assembled InGaAs/GaAs Quantum Dots with GaAs/AlGaAs superlattices by rapid thermal annealing"

    Symp. J: III-V Semiconductors for Microelectronic and Optoelectronic Applications, 3rd Intl. Conf. on Materials for Advanced Technologies (ICMAT) and 9th Intl. Conf. on Advanced Materials (IUMRS-ICAM), Singapore, July 3-8, J-3-OR5. (2005)
  • Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A. Liu

    "InGaAs/InP Type-I DHBTs Having 450 GHz ft and 490 GHz fmax with Ccb/Ic 0.38 ps/V"

    63rd Device Research Conference, Santa Barbara, CA, June 20-22, VII.B-7. (2005)
  • Z. Griffith, M. Dahlström, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A.W.K. Liu

    "In0.53G0.47aAs/InP Type-I DHBTs with 100 nm Collector and 491 GHz ft, 415 GHz fmax"

    17th International Conference on InP and Related Materials, Glasgow, Scotland, UK, May 8-12, TuA-2.4. (2005)
  • W.K. Liu, J.M. Fastenau, D. Lubyshev, X.-M. Fang, Y. Wu, and C. Doss

    "InP Substrate Evaluation for Epi-Ready MBE Growth"

    17th International Conference on InP and Related Materials, Glasgow, Scotland, UK, May 8-12, TP-15. (2005)
  • J.M. Fastenau, W.K. Liu, D. Lubyshev, X.-M. Fang, Y. Wu, and C. Doss

    "Evaluation of 4" InP Substrates for Epi-Ready Production MBE Growth"

    International Conference on Compound Semiconductor Manufacturing Technology, New Orleans, LA, April 11-14, 4.5. (2005)
  • L. Blunt, J. Armstrong, & R. Blunt

    "The use of advanced 3D surface metrology for the characterisation of epi-wafers and Si structures"

    Phys. Stat. Sol., C 2, No 4, 1251-1258. (2005)
  • Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu

    "InGaAs/InP DHBTs with 120 nm collector having simultaneously high ft, fmax > 450 GHz"

    IEEE Electron Device Letts (2005)
  • J.M. Fastenau, D.I. Lubyshev, Y. Wu, C. Doss, and W.K. Liu

    "Comparative Studies of the Epi-Readiness of 4" InP Substrates for MBE Growth"

    J. Vac. Sci. Technol. B, 23. (2005)
  • Z. Griffith, M. Dahlström, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu

    "InGaAs/InP DHBTs for Increased Digital IC Bandwidth having a 391 GHz ft and 505 GHz fmax"

    IEEE Electron Device Letts. 26, 11. (2005)
  • S.V. Bandara, S.D. Gunapala, J.K. Liu, S.B. Rafol, C.J. Hill, D.Z.Y. Ting, J.M. Mumolo, T.Q. Trinh, J.M. Fastenau, and A.W.K. Liu

    "Tuning and Tailoring of Broadband Quantum-well Infrared Photodetector Responsivity Spectrum"

    Appl. Phys. Letts. 86, 151104. (2005)
  • Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu

    "InGaAs/InP DHBTs with 120 nm collector having simultaneously high ft ,fmax > 450 GHz"

    IEEE Electron Device Letts. 26, 530 (2005)
  • D. Lubyshev, J. M. Fastenau, W.K. Liu, Y. Wu, M. T. Bulsara, E. A. Fitzgerald, and W. E. Hoke

    "MBE Growth of M-HEMTs and M-HBTs on Ge and Ge-on-Insulator Substrates"

    J. Vac. Sci. Technol. B, 26, 1115 (2005)