Publications

Publications

  • D. Hartzell, L.K. Leung, and F.J. Towner

    "Cost-effective, High-volume Molecular Beam Epitaxy"

    JOM, 50, 37. (1998)
  • W.K. Liu, K.J. Goldammer and M.B. Santos

    "Surface Segregation and Compensation of Si in d-doped InSb and AlxIn1-xSb Grown by Molecular Beam Epitaxy"

    J. Appl. Phys. 84, 205. (1998)
  • X.M. Fang, I-N. Chao, B.N. Strecker, P.J. McCann, S. Yuan, W.K. Liu, and M.B. Santos

    "MBE Growth of Bi2Se3- and Tl2Se-doped PbSe and PbEuSe on CaF2/Si(111)"

    J. Vac. Sci. Technol. B, 16, 1459. (1998)
  • K.J. Goldammer, W.K. Liu, G.A. Khodaparast, S.C. Lindstrom, M.B. Johnson, R.E. Doezema, and M.B. Santos

    "Electrical Properties of InSb Quantum Wells Remotely Doped with Si"

    J. Vac. Sci. Technol. B, 16, 1367. (1998)
  • P. Specht, W.K. Liu, K. Bacher, R.C. Lutz, R. Zhao, M. Luysberg, F.J. Towner, T.R. Stewart, and E.R. Weber

    "Improvement of MBE-grown LT-GaAs through p-doping with Be and C"

    17th North American Conference on Molecular Beam Epitaxy, College Station, PA, October 24-26, P.10. (1998)
  • M. Tidrow, X. Jiang, S. Li, and K. Bacher

    "A Novel Four-Color Quantum Well Infrared Photodetector"

    194th Meeting of the Electrochemical Society and 6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Boston, MA, November 1-6, N4-614. (1998)
  • K.K. Choi, K.L. Bacher, and Y. Wu

    "Corrugated QWIP with Dielectric Coverage for Focal Plane Array Applications"

    194th Meeting of the Electrochemical Society and 6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Boston, MA, November 1-6, N4-610. (1998)
  • A.W. Hanson, D. Danzilio, K. Bacher, and L. Leung

    "A Selective Gate Recess Process Utilizing MBE-grown In0.5Ga0.5P Etch-stop Layers for GaAs-based FET Technologies"

    20th Annual IEEE GaAs IC Symposium, Atlanta, GA, November 1-4, J.3. (1998)
  • P. Specht, R.C. Lutz, R. Zhao, M.J. Cich, O.H. Lam, E.R. Weber, W.K. Liu, K. Bacher, F.J. Towner, T.R. Stewart, and M. Luysberg

    "Growth and Characterization of p-doped LT-GaAs"

    Symposium on Non-stoichiometric III-V Compounds, Erlangen, Germany, October 5-7. (1998)
  • A.W.K. Liu, K. Bacher, E.R. Weber, P. Specht, F.J. Towner, and T.R. Stewart

    "Properties of C-Doped LT-GaAs Grown by MBE Using CBr4"

    10th International Conference on Molecular Beam Epitaxy, Cannes, France, August 31-September 4, PT5.20. (1998)
  • K.J. Goldammer, S. J. Chung, W.K. Liu, and M.B. Santos

    "High-mobility Electron Systems in Remotely-doped InSb Quantum Wells"

    10th International Conference on Molecular Beam Epitaxy, Cannes, France, August 31-September 4, PT5.9. (1998)
  • K.J. Goldammer, N. Dai, J. Hicks, S.J. Chung, F. Brown, S. Raymond, W.K. Liu, R.E. Doezema, J.E. Furneaux, S.Q. Murphy, and M.B. Santos

    "Two-Dimensional Electron Systems in InSb Quantum Wells"

    11th Conference on Superlattice, Microstructures and Microdevices (Satellite Conference of the 24th International Conference on Physics of Semiconductors), Hurgada, Egypt, July 27-August 1. (1998)
  • W.K. Liu, K. Bacher, F.J. Towner, and T.R. Stewart

    "MBE Growth and Characterization of C-doped LT-GaAs"

    40th Electronic Materials Conference, Charlottesville, VA, June 24-26, A6. (1998)
  • K. Bacher, W.K. Liu, Y. Wu, M. Micovic, D. Lubyshev, D.L. Miller, Y. Yun, J. Atherton, J. Chi, P. Ersland, M. Fukuda, A. Hansen, K. Lu, M. O'Keefe, P. Staecher, and X. Zhang

    "Molecular Beam Epitaxy Grown Carbon-Doped Heterojunction Bipolar Transistors"

    International Conference on GaAs Manufacturing Technology, Seattle, WA, April 27-30. (1998)
  • M.B. Johnson, S.C. Lindstrom, K.J. Goldammer, W.K. Liu, and M.B. Santos

    "Atomic Force Microscopy Used to Improve the Mobility of InSb-based Quantum Wells"

    American Physical Society Meeting, Los Angeles, CA, March 16-22, X27.08. (1998)
  • K.J. Goldammer, W.K. Liu, G.A. Khodaparast, F.W. McKenna, and M.B. Santos

    "High-Mobility InSb Quantum Wells Remotely-Doped with Si"

    American Physical Society Meeting, Los Angeles, CA, March 16-22, X27.09. (1998)
  • W.K. Liu, K.J. Goldammer, and M.B. Santos

    "Surface Segregation and Dopant Compensation in Si d-doped InSb and AlxIn1-xSb Grown by Molecular Beam Epitaxy"

    American Physical Society Meeting, Los Angeles, CA, March 16-22, Q23.06. (1998)
  • S.Q. Murphy, S. Raymond, J.L. Hicks, J.E. Furneaux, K.J. Goldammer, W.K. Liu, M.B. Santos, and E. Watters

    "Hopping Conductivity in InSb based 2D Electronic Systems at High Magnetic Fields"

    American Physical Society Meeting, Los Angeles, CA, March 16-22, G33.12. (1998)
  • K. Bacher, W.K. Liu, Y. Wu, and T. Stewart

    "Strain-compensated InGaAs/AlGaAsP Quantum Well Intersubband photodetectors for Mid-IR Wavelength"

    Photonics West International Symposium on Optoelectronics '98: Integrated Devices and Applications, San Jose, CA, January 24-30, 1998, S3, Proc. SPIE Vol. 3287, Photodetectors: Materials and Devices III, Ed. G.J. Brown, (SPIE, Washington) p.80. (1998)